MTP3N60(1).pdf

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MTP3N60
MTP3N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
V DSS
R DS(on)
I D
MTP3N60
MTP3N60FI
600 V
600 V
< 2.5
W
3.9 A
2.5 A
< 2.5
W
n
TYPICAL R DS(on) = 2
W
AVALANCHE RUGGED TECHNOLOGY
n
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100 o C
n
3
APPLICATION ORIENTED
CHARACTERIZATION
3
n
2
2
1
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220 ISOWATT220
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
MTP3N60
MTP3N60FI
V DS
Drain-source Voltage (V GS = 0)
600
V
V DGR
Drain- gate Voltage (R GS = 20 k
W
)
600
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c = 25 o C
3.9
2.5
A
I D
Drain Current (continuous) at T c = 100 o C
2.4
1.5
A
I DM (
·
) Drain Current (pulsed)
14
14
A
P tot
Total Dissipation at T c = 25 o C
100
35
W
Derating Factor
0.8
0.28
W/ o C
V ISO
Insulation Withstand Voltage (DC)
¾
2000
V
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
·
) Pulse width limited by safe operating area
November 1996
1/10
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MTP3N60/FI
THERMAL DATA
TO-220
ISOWATT220
R thj-case Thermal Resistance Junction-case Max
1.25
3.57
o C/W
R thj-amb
R thc-sink
T l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o C/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
3.9
A
d
< 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
300
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max,
7.7
mJ
d
< 1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max,
2.4
A
d
< 1%)
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D = 250
m
A V GS = 0
600
V
I DSS
Zero Gate Voltage
Drain Current (V GS = 0)
V DS = Max Rating
V DS = Max Rating x 0.8 T c = 125 o C
25
250
A
m
A
I GSS
Gate-body Leakage
Current (V DS = 0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold Voltage V DS = V GS I D = 1 mA
2
3
4.5
V
R DS(on) Static Drain-source On
Resistance
V GS = 10V I D = 1.5 A
2
2.5
W
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
3.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
)
rrd
Transconductance
V DS > I D(on) x R DS(on)max I D = 1.5 A
1.5
2.6
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V f = 1 MHz V GS = 0
560
90
40
800
130
55
pF
pF
pF
2/10
m
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MTP3N60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V GS = 10 V
(see test circuit, figure 3)
W
45
33
60
42
ns
ns
(di/dt) on Turn-on Current Slope V DD = 480 V I D = 4 A
R G = 15
200
A/
m
s
V GS = 10 V
(see test circuit, figure 5)
W
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V I D = 4 A V GS = 10 V
43
6
21
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V GS = 10 V
(see test circuit, figure 5)
W
35
40
60
45
55
75
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM (
·
)
Source-drain Current
Source-drain Current
(pulsed)
3.9
14
A
A
V SD (
*
) Forward On Voltage
I SD = 3.9 A V GS = 0
2
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 4 A di/dt = 100 A/
m
s
420
ns
V DD = 100 V T j = 150 o C
(see test circuit, figure 5)
Q rr
3.7
m
C
I RRM
18
A
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
·
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
V DD = 225 V I D = 2.5 A
R G = 15
V DD = 480 V I D = 4 A
R G = 15
(
(
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MTP3N60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
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MTP3N60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
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