H11D.pdf

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11D1/D
GlobalOptoisolator ]
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[CTR = 20% Min]
*Motorola Preferred Device
The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes
optically coupled to high voltage, silicon, phototransistor detectors in a standard
6–pin DIP package. They are designed for high voltage applications and are
particularly useful in copy machines and solid state relays.
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
STYLE 1 PLASTIC
6
1
Copy Machines
STANDARD THRU HOLE
CASE 730A–04
•
Interfacing and coupling systems of different potentials and impedances
•
Monitor and Detection Circuits
•
Solid State Relays
SCHEMATIC
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
1
6
Symbol
Value
Unit
2
3
5
4
INPUT LED
Forward Current — Continuous
I F
60
mA
Forward Current — Peak
Pulse Width = 1
I F
1.2
Amps
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
m
s, 330 pps
LED Power Dissipation @ T A = 25
°
C
P D
120
1.41
mW
mW/
Derate above 25
°
C
°
C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
V CER
300
Volts
Emitter–Collector Voltage
V ECO
7
Volts
Collector–Base Voltage
V CBO
300
Volts
Collector Current — Continuous
I C
100
mA
Detector Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
150
1.76
mW
mW/ ° C
TOTAL DEVICE
Total Device Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
250
2.94
mW
mW/ ° C
Operating Temperature Range (3)
T J
– 55 to +100
° C
Storage Temperature Range (3)
T stg
– 55 to +150
°
C
Soldering Temperature (10 s)
T L
260
° C
Isolation Surge Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration (1)
V ISO
7500
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2
1. are common, and Pins 4, 5 and 6 are common.
2. H11D1 is rated @ 5656 Volts peak (V ISO ). H11D2 is rated @ 3535 Volts peak (V ISO )
1. Otherwise they are identical, both parts built by Motorola are rated @ 7500 Volts peak (V ISO )
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
W
Motorola Optoelectronics Device Data
1
Motorola, Inc. 1995
385287727.016.png 385287727.017.png 385287727.018.png 385287727.019.png 385287727.001.png 385287727.002.png 385287727.003.png 385287727.004.png 385287727.005.png
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (1)
Characteristic
Symbol
Min
Typ (1)
Max
Unit
INPUT LED (T A = 25 ° C unless otherwise noted)
Reverse Leakage Current
(V R = 6 V)
I R
—
—
10
m A
Forward Voltage
(I F = 10 mA)
V F
—
1.2
1.5
Volts
Capacitance
(V = 0 V, f = 1 MHz)
C
—
18
—
pF
C and I F = 0 unless otherwise noted)
Collector–Emitter Dark Current (R BE = 1 M W )
(V CE = 200 V, T A = 25 ° C)
°
H11D1,2
I CER
—
—
—
—
100
250
nA
m A
(T A = 100 ° C)
H11D1,2
Collector–Base Breakdown Voltage
(I C = 100
V (BR)CBO
Volts
m
A)
H11D1,2
—
—
300
Collector–Emitter Breakdown Voltage
(I C = 1 mA, R BE = 1 M
V (BR)CER
Volts
W
)
H11D1,2
—
—
300
Emitter–Base Breakdown Voltage
(I E = 100
V (BR)EBO
7
—
—
Volts
m
A)
COUPLED (T A = 25 ° C unless otherwise noted)
Output Collector Current
(V CE = 10 V, I F = 10 mA, R BE = 1 M
I C (CTR) (2)
mA (%)
W
)
H11D1,2
2 (20)
—
—
Surge Isolation Voltage (Input to Output) (3)
Peak ac Voltage, 60 Hz, 1 sec
V ISO
7500
—
—
Vac(pk)
Isolation Resistance (3)
(V = 500 V)
R ISO
—
10 11
—
Ohms
Collector–Emitter Saturation Voltage
(I C = 0.5 mA, I F = 10 mA, R BE = 1 M
V CE(sat)
—
—
0.4
Volts
W
)
Isolation Capacitance (3)
(V = 0, f = 1 MHz)
C ISO
—
0.2
—
pF
Turn–On Time
t on
—
5
—
m s
V CC = 10 V, I C = 2 mA, R L = 100 W
V CC = 10 V, I C = 2 mA, R L = 100 W
Turn–Off Time
t off
—
5
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I C /I F x 100%.
3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
TYPICAL CHARACTERISTICS
50
20
W
V CE = 10 V
10
20
5
I F = 20 mA
10
2
R BE = 10 6 W
V CE = 10 V
T A = 25 ° C
I F = 10 mA
1
5
0.5
I F = 5 mA
2
0.2
0.1
1
1
2
5
10
20
50
–60
–40 –20
0
20 40 60
80 100
I F , LED INPUT CURRENT (mA)
T A , AMBIENT TEMPERATURE (
°
C)
Figure 1. Output Current versus LED Input Current
Figure 2. Output Current versus Temperature
2
Motorola Optoelectronics Device Data
OUTPUT TRANSISTOR (T A = 25
R BE = 10 6
385287727.006.png 385287727.007.png
40
2
I F = 50 mA
PULSE ONLY
PULSE OR DC
10
1.8
5
I F = 10 mA
1
I F = 5 mA
1.6
0.5
0.1
R BE = 10 6
W
1.4
T A = 25
°
C
T A = –55 ° C
0.05
1.2
25 ° C
0.01
100 ° C
0.005
1
0.1
0.5 1
5 10
50 100
300
1
10
100
1000
V CE , COLLECTOR VOLTAGE (VOLTS)
I F , LED FORWARD CURRENT (mA)
Figure 3. Output Characteristics
Figure 4. Forward Characteristics
300
1000
I F = 50 mA
R BE = 10 6 W
V CE = 10 V
240
180
100
V CE = 300 V
120
I F = 10 mA
I F = 5 mA
V CE = 100 V
RBE = 10 6
W
10
60
V CE = 50 V
0
–60
–40 –20
0
20 40 60
80 100
1
20
30
40
50
60
70 80
90 100
T A , AMBIENT TEMPERATURE ( ° C)
T A , AMBIENT TEMPERATURE ( ° C)
Figure 5. Collector–Base Current versus Temperature
Figure 6. Dark Current versus Temperature
100
C LED
C CB
f = 1 MHz
10
1
0.01
0.1
1
10
100
V, VOLTAGE (VOLTS)
Figure 7. Capacitance versus Voltage
Motorola Optoelectronics Device Data
3
385287727.008.png 385287727.009.png
PACKAGE DIMENSIONS
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
6
4
–B–
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
1
3
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
A
0.320 0.350
8.13
8.89
C
F
4 PL
N
L
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
F
0.010 0.014
0.25
0.36
G
0.100 BSC
2.54 BSC
–T–
K
J
0.008 0.012
0.21
0.30
SEATING
PLANE
K
0.100 0.150
2.54
3.81
J
6 PL
L
0.300 BSC
7.62 BSC
G
M
0
15
0
15
E
6 PL
M
0.13 (0.005)
M
T
B
M
A M
N
0.015 0.100
0.38
2.54
D
6 PL
0.13 (0.005)
M
T
A
M
B M
CASE 730A–04
ISSUE G
–A–
6
4
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
3
INCHES
MILLIMETERS
F 4 PL
L
DIM MIN
MAX
MIN
MAX
H
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
C
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
–T–
F
0.010 0.014
0.25
0.36
G
J
SEATING
PLANE
G
0.100 BSC
2.54 BSC
H
0.020 0.025
0.51
0.63
K
E 6 PL
6 PL
J
0.008 0.012
0.20
0.30
K
0.006 0.035
0.16
0.88
D 6 PL
0.13 (0.005)
T
B
A M
M
M
L
0.320 BSC
8.13 BSC
0.13 (0.005)
T
A
B M
S
0.332 0.390
8.43
9.90
M
M
CASE 730C–04
ISSUE D
*Consult factory for leadform
option availability
4
Motorola Optoelectronics Device Data
385287727.010.png 385287727.011.png 385287727.012.png
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
6
4
–B–
1
3
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
F 4 PL
N
L
C
0.115 0.200
2.93
5.08
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
C
F
0.010 0.014
0.25
0.36
G
0.100 BSC
2.54 BSC
–T–
J
0.008 0.012
0.21
0.30
K
0.100 0.150
2.54
3.81
SEATING
L
0.400 0.425 10.16 10.80
PLANE
G
K
J
N
0.015 0.040
0.38
1.02
D 6 PL
E 6 PL
0.13 (0.005)
M
T
A
M
B M
*Consult factory for leadform
option availability
CASE 730D–05
ISSUE D
Motorola Optoelectronics Device Data
5
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