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QUAD BILATERAL SWITCH
HCC/HCF4016B
. 20V DIGITAL OR
QUAD BILATERAL SWITCH
. 280 W TYPICAL ON RESISTANCE FOR 15V
±
10V PEAK-TO-PEAK
of analog or digital signals. Each of the four inde-
pendent bilateral switches has a single control signal
input which simultaneously biases both the p and n
device in a given switch ON or OFF.
SWITCHING
. SWITCH ON RESISTANCE MATCHED TO
WITHIN 10
OPERATION
. HIGH ON/OFF OUTPUT-VOLTAGE RATIO :
65dB TYP. @ f is = 10kHz, R L = 10k
W
TYP. OVER 15V SIGNAL INPUT
RANGE
. HIGH DEGREE OF LINEARITY : < 0.5% DIS-
W
. EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET CUR-
RENT AND HIGH EFFECTIVE OFF RESIST-
ANCE: 100pA TYP. @ V DD -V SS = 18V, T amb =
25
10V, R L = 10k
W
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
. EXTREMELY HIGH CONTROL INPUT IMPED-
C
. LOW CROSSTALK BETWEEN SWITCHES :
50dB TYP. @ f is = 0.9MHz, R L =1k
M1
(Micro Package)
C1
(Plastic Chip Carrier)
W
typ.)
ORDER CODES :
HCC4016BF
. MATCHED CONTROL-INPUT TO SIGNAL-
W
HCF4016BM1
HCF4016BEY
HCF4016BC1
. FREQUENCY RESPONSE’ SWITCH ON =
. QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
40MHz (typ.)
PIN CONNECTIONS
. 5V, 10V, AND 15V PARAMETRIC RATINGS
. INPUT CURRENT OF 100nA AT 18V AND 25 ° C
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
DESCRIPTION
The HCC4016B (extended temperature range) and
HCF4016B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micropackage.
The HCC/HCF4016B Series types are quad bilateral
switches intended for the transmission or multiplexing
June 1989
1/15
TORTION TYP. @ f is = 1KHz, V is =5V pp ,V DD -
V SS .
°
ANCE (control circuit isolated from signal circuit
10 12
OUTPUT CAPACITANCE : REDUCES OUT-
PUT SIGNAL TRANSIENTS
FOR HCC DEVICE
TATIVE STANDARD N
337926190.002.png
HCC/HCF4016B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V i
Input Voltage
– 0.5 to V DD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
P tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = Full Package-temperature Range
200
mW
100
mW
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
T stg
Storage Temperature
– 65 to + 150
°
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specifi cation is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to V SS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
2/15
°
°
337926190.003.png
HCC/HCF4016B
SCHEMATIC DIAGRAM
1 OF 4 IDENTICAL SECTION
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V C =V SS V DD
T Low *
25
C
T Hig h *
Unit
V DD (V)
(V) Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Device
Current (all
switches
on or all
switches
off)
5
0.25
0.01 0.25
7.5
HCC
Types
10
0.5
0.01 0.5
15
15
1
0.01
1
30
m
A
20
5
0.02
5
150
HCF
Types
5
1
0.01
1
7.5
10
2
0.01
2
15
15
4
0.01
4
30
SWITCH
V IS
R ON Resistance
+ 7.5
– 7.5
±
360
360
775
200
200
280
400
400
850
600
600
1230
HCC
0.25
R L =10k
W•
+ 7.5 – 7.5
HCF
+ 7.5
– 7.5
±
370
370
790
200
200
280
400
400
850
520
520
1080
0.25
W
HCC
+5
–5
±
600
600
1870
250
250
580
660
660
2000
960
960
2600
0.25
R L =10k
W•
+5 –5
HCF
+5
–5
±
610
610
1900
250
250
580
660
660
2000
840
840
2380
*T Lo w =–55
°
Cfor HCC device : – 40
Cfor HCF device.
*T High =+125
°
C for HCC device : + 85
°
C for HCF device.
3/15
°
0.25
°
337926190.004.png
HCC/HCF4016B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Value
Symbol
Parameter
V C =V SS V DD
T Low *
25
°
C
T Hig h *
Unit
V DD (V)
(V) Min. Max. Min. Typ. Max. Min. Max.
SWITCH (continued)
R ON Resistance
HCC
+15 0
+15
+ 0.25
+ 9.3
360
360
775
200
200
300
400
400
850
600
600
1230
R L =10k
W•
HCF
+15 0
+15
+ 0.25
+ 9.3
370
370
790
200
200
300
400
400
800
520
520
1080
W
HCC
+10 0
+10
+ 0.25
+ 5.6
600
600
1870
250
250
560
660
660
2000
960
960
2600
R L =10k
W•
HCF
+10 0
+10
+ 0.25
+ 5.6
610
610
1900
250
250
560
660
660
2000
840
840
2380
D
ON Resistance
RON
(between any 2
of 4 switches)
D
+ 7.5 – 7.5
±
7.5
10
R L =10k
W•
W
+5 –5
±
5
15
Input or Output
Leakage Current
Switch OFF
(effective off
resistance)
V DD
V C =
V SS
0
HCC
10 –5
+18
±
0.1
±
0.1
1
m
A
V DD
V C =
V SS
0
HCF
+15
±
0.3
10 –5
±
0.3
1
C I
Input Capacitance
4
C O
Output
Capacitance
V CC =V SS =– 5
+5
4
pF
C IO
Feedthrough
0.2
CONTROL (V C )
V TH
Switch Threshold
Voltage
5
1
1
2.25
1
I IS =10
m
A
V
10
2
2
4.5
2
15
2
2
6.75
2
I I
Input
Current
HCC
Types
18
±
0.1
±
10 –5
±
0.1
±
1
V IS
3
V DD
m
A
HCF
Types
15
±
0.3
±
10 –5
±
0.3
±
1
C I
Input Capacitance
5
7.5
pF
*T Lo w =–55
°
Cfor HCC device : – 40
Cfor HCF device.
*T High =+125
°
C for HCC device : + 85
°
C for HCF device.
4/15
°
337926190.005.png
HCC/HCF4016B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF all input square
wave rise and fall time = 20ns)
Test Conditions
Value
Parameter
R L
(k
f i
(KHz)
V I
(V)
V ss
(V)
V DD
(V)
Unit
V C (V)
Typ. Max.
W
)
SWITCH
t pd Propagation Delay Time
(signal intput to output)
5
40 100
10sq.
Wave
=V DD
10
GND
10
20 50
ns
15
15 40
Crosstalk Between any 2 of 4
Switches (f @ – 50dB)
V O(B)
____
V I( A)
V C(A ) =V DD =+5
V C(B ) =V SS =–5
1
V I(A)
D
= 5p-p
0.9
MHz
20 log 10
= – 50dB
Frequency Response Switch
”ON” (sine wave input)
V O
____
V I
=V DD
=+5
1
5p-p – 5
40
MHz
At 20 log 10
= – 3dB
Feedtrough (switch OFF)
V O
____
V I
= – 50dB
=V SS
=–5
1
– 5p-p
5
1.25
MHz
Sine Wave Distortion
= V DD
=5
10
1
5p-p – 5
0.4
%
CONTROL (V C )
Propagation Delay :
(turn on control to
output)
V DD
or
V SS
5
35 70
V DD –V SS
(sq. wawe)
1
10
V DD –V SS = 10V
20 40
ns
15
15 30
Max. Allowable Control Input
Repetition Rate
10 (sq. wawe)
1
V DD GND 10
10
MHz
Crosstalk (control input to
signal output)
10 (sq. wave)
10
GND 10
50
mV
(D)
Symmetrical about OV
(
•)
For all test conditions.
Typical ”ON” Characteristics for 1 of 4 switches with V DD = + 15V, V SS = 0V, and Test Circuit.
5/15
At 20 log 10
337926190.001.png

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