T410-B_T435-B.pdf

T410/T435-B

HIGH PERFORMANCE TRIACS

. I TRMS = 4 A

PRELIMINARY DATASHEET

. V DRM = 400 V to 800 V

. I GT £ 10mA and 35mA

DESCRIPTION

The T410/T435-B serie of triacs uses a high

performance TOPGLASS PNPN technology.

The parts are intended for general purpose

applications using mount technology.

DPAK

(Plastic)

ABSOLUT MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I T(RMS)

RMS on-state current

(360

Tc = 110

conduction angle)

I TSM

Non repetitive surge peak on-state current

( Tj initial = 25

tp = 8.3 ms

C )

tp = 10 ms

I 2 t

I 2 t value for fusing

tp = 10 ms

4.5

A 2 s

dI/dt

Critical rate of rise of on-state current

I G = 500mA di G /dt = 1A/

Repetitive

F = 50 Hz

Non

Repetitive

Tstg

Storage temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

Maximum lead temperature for soldering during 10 s

260

Symbol

Parameter

T410 or T435-

Unit

400B

600B

700B

800B

V DRM

V RRM

Repetitive peak off-state voltage

Tj = 125

400

600

700

800

March 1996 Ed : 1

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FEATURES

T410/T435-B

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case for DC

3.5

C/W

Rth (j-c)

Junction to case for AC 360

conduction angle ( F= 50 Hz)

2.6

C/W

GATE CHARACTERISTICS (maximum values)

P G(AV) = 1 W P GM = 10 W (tp = 20

s) I GM = 4 A (tp = 20

s) V GM = 16 V (tp = 20

s).

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Quadrant

Value

Unit

T410

T435

I GT

V D =12V (DC) R L =33

Tj=25

I-II-III

MAX

V GT

V D =12V (DC) R L =33

Tj=25

I-II-III

MAX

1.5

V GD

V D =V DRM R L =3.3k

Tj=125

I-II-III

MIN

0.2

tgt

V D =V DRM I G = 500mA

dI G /dt = 3A/

Tj=25

I-II-III

TYP

I TM = 5.5A

I L

I G =1.2 I GT

Tj=25

I-II-III

MAX

I H *

I T = 100mA gate open

Tj=25

MAX

V TM *

I TM = 5.5A tp= 380

Tj=25

MAX

1.75

I DRM

I RRM

V DRM Rated

V RRM Rated

Tj=25

MAX

Tj=125

MAX

dV/dt *

Linear slope up to

V D =67%V DRM gate open

Tj=125

MIN

250

(dI/dt)c * (dV/dt)c = 0.1V/

Tj=125

MIN

2.7

4.4

A/ms

(dV/dt)c = 20V/

1.8

2.7

* For either polarity of electrode A 2 voltage with reference enceenceto electrode A 1 .

ORDERING INFORMATION

T 4 10 - 600 B

TRIAC

PACKAGES

B = DPAK

CURRENT

SENSITIVITY

V DRM / V RRM

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T410/T435-B

PACKAGE MECHANICAL DATA

DPAK Plastic

REF.

DIMENSIONS

Millimeters

Inches

Min. Typ. Max Min. Typ. Max.

B 2

2.20

2.40 0.086

0.094

A1 0.90

1.10 0.035

0.043

A2 0.03

0.23 0.001

0.009

0.64

0.90 0.025

0.035

B2 5.20

5.40 0.204

0.212

0.45

0.60 0.017

0.023

C2 0.48

0.60 0.018

0.023

6.00

6.20 0.236

0.244

6.40

6.60 0.251

0.259

4.40

4.60 0.173

0.181

9.35

10.10 0.368

0.397

0.80

0.031

0.60 MIN.

L4 0.60

1.00 0.023

0.039

0°

8°

0°

8°

MARKING : Type number

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for

the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its

use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica-

tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without

express written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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