STTH3003CW.pdf

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HIGH FREQUENCY SECONDARY RECTIFIER
®
STTH3003CW
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I F(AV)
2 x 15 A
V RRM
300 V
Tj (max)
175 °C
V F (max)
1 V
trr (max)
40 ns
A2
K
A1
FEATURES AND BENEFITS
TO-247
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRAFAST, SOFT AND NOISE-FREE
RECOVERY FOR LOW SIDE EFFECTS
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC to DC converters.
Packaged in TO-247 this device is intended for
secondary rectification.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
V RRM
Repetitive peak reverse voltage
300
V
I F(RMS) RMS forward current
30
A
I F(AV)
Average forward current
Tc = 135 ° C
d = 0.5
Per diode
Per device
15
30
A
I FSM
Surge non repetitive forward current
tp = 10 ms Sine wave
140
A
I RSM
Non repetitive peak reverse current
tp = 20 m s square
7
A
T stg
Storage temperature range
-65 +175
°
C
Tj
Maximum operating junction temperature
+175
°C
November 1998 - Ed: 5A
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STTH3003CW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R th (j-c) Junction to case
Per diode
2.0
° C/W
Total
1.05
R th (c)
Coupling
0.1
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
I R *
Reverse leakage
current
V R = 300 V
Tj = 25
°
C
40
m A
Tj = 125 ° C
40
400
V F **
Forward voltage drop I F = 15 A
Tj = 25 ° C
1.25
V
I F = 15 A
Tj = 125 ° C
0.85
1
< 2 %
** tp = 380 m s, d < 2%
d
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I F(AV) + 0.017 I F 2 (RMS)
RECOVERY CHARACTERISTICS
Symbol
Tests conditions
Min. Typ. Max.
Unit
trr
I F = 0.5 A Irr = 0.25 A I R = 1A Tj = 25
°
C
30
ns
I F = 1 A dI F /dt = - 50 A/ m s V R = 30V Tj = 25 ° C
40
tfr
I F = 15 A dI F /dt = 100 A/ m s
V FR = 1.1 x VF max.
Tj = 25 ° C
300
ns
V FP
Tj = 25
°
C
3.5
V
S factor
Vcc = 200 V I F = 15 A
dI F /dt = 200A/ m s
Tj = 125
°
C
0.3
-
I RM
8.5
A
2/5
Pulse test : * tp = 5 ms,
383885204.006.png 383885204.007.png
STTH3003CW
Fig. 1: Conduction losses versus average current
(per diode).
Fig. 2: Forward voltage drop versus forward
current (maximum values , per diode) .
P1(W)
IFM(A)
20
= 0.1
= 0.2
200
d
d
= 0.5
d
18
d = 0.05
100
16
14
d = 1
Tj=125°C
12
10
Tj=25°C
Tj=75°C
10
8
6
T
4
2
IF(av) (A)
d
=tp/T
tp
VFM(V)
0
1
02468024680
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
Zth(j-c)/Rth(j-c)
IRM(A)
1.0
16
14
VR=200V
Tj=125°C
IF=2*IF(av)
0.8
12
IF=IF(av)
0.6
d
= 0.5
10
8
IF=0.5*IF(av)
0.4
d
= 0.2
6
d
= 0.1
T
4
0.2
Single pulse
2
tp(s)
d
=tp/T
tp
dIF/dt(A/µs)
0.0
0
1E-3
1E-2
1E-1
1E+0
0 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
Fig. 6: Softness factor versus dIF/dt (typical
values, per diode).
trr(ns)
S factor
100
0.60
80
VR=200V
Tj=125°C
0.50
VR=200V
Tj=125°C
0.40
60
IF=2*IF(av)
IF=IF(av)
0.30
40
0.20
20
IF=0.5*IF(av)
0.10
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
0.00
0 50 100 150 200 250 300 350 400 450 500
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STTH3003CW
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode).
VFP(V)
2.6
8
2.4
2.2
7
IF=IF(av)
Tj=125°C
2.0
6
1.8
1.6
S factor
5
1.4
4
1.2
1.0
3
0.8
IRM
2
0.6
0.4
1
dIF/dt(A/µs)
0.2
Tj(°C)
0
0.0
0
50 100 150 200 250 300 350 400 450 500
25
50
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
tfr(ns)
500
450
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
400
350
300
250
200
150
100
50
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
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STTH3003CW
PACKAGE MECHANICAL DATA
TO-247
V
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
Dia.
A
4.85
5.15 0.191
0.203
D 2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
A
F
1.00
1.40 0.039
0.055
H
F1
3.00
0.118
F2
2.00
0.078
F3 2.00
2.40 0.078
0.094
L5
F4 3.00
3.40 0.118
0.133
L
G
10.90
0.429
H 15.45
15.75 0.608
0.620
L2
L4
L 19.85
20.15 0.781
0.793
F2
L1 3.70
4.30 0.145
0.169
F1
L1
L2
18.50
0.728
F3
D
L3 14.20
14.80 0.559
0.582
V2
L3
F4
L4
34.60
1.362
F(x3)
L5
5.50
0.216
M 2.00
3.00 0.078
0.118
G
= =
M
E
V
5°
5°
V2
60°
60°
Dia. 3.55
3.65 0.139
0.143
Cooling method : by conduction (C)
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH3003CW STTH3003CW
TO-247
4.36g
30
Tube
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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