STP7NB60.pdf

(359 KB) Pobierz
434428561 UNPDF
STP7NB60
STP7NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
Ô
MOSFET
TYPE
V DSS
R DS(on)
I D
STP7NB60
STP7NB60FP
600 V
600 V
< 1.2
W
7.2 A
4.1 A
< 1.2
W
n
TYPICAL R DS(on) = 1.0 W
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
n
3
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
2
2
1
1
Ô
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
n
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NB60
STP7NB60FP
V DS
Drain-source Voltage (V GS = 0)
600
V
V DGR
Drain- gate Voltage (R GS = 20 k
W
)
600
V
V GS
Gate-source Voltage
±
30
V
I D
Drain Current (continuous) at T c = 25 o C
7.2
4.1
A
I D
Drain Current (continuous) at T c = 100 o C
4.5
2.6
A
I DM (
·
) Drain Current (pulsed)
28.8
28.8
A
P tot
Total Dissipation at T c = 25 o C
125
40
W
Derating Factor
1.0
0.32
W/ o C
dv/dt( 1 ) Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V ISO
Insulation Withstand Voltage (DC)
¾
2000
V
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
( · ) Pulse width limited by safe operating area ( 1 ) I SD £ 7A, di/dt £ 200 A/ m s, V DD £ V (BR)DSS , Tj £ T JMAX
March 1998
1/9
434428561.020.png 434428561.021.png 434428561.022.png 434428561.023.png 434428561.001.png 434428561.002.png 434428561.003.png 434428561.004.png 434428561.005.png 434428561.006.png 434428561.007.png 434428561.008.png
STP7NB60/FP
THERMAL DATA
TO-220
TO220-FP
R thj-case Thermal Resistance Junction-case Max
1.0
3.13
o C/W
R thj-amb
R thc-sink
T l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o C/W
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
7.2
A
d
< 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
580
mJ
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D = 250
m
A V GS = 0
600
V
I DSS
Zero Gate Voltage
Drain Current (V GS = 0)
V DS = Max Rating
V DS = Max Rating T c = 125 o C
1
50
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS = 0)
V GS =
±
30 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold Voltage V DS = V GS I D = 250
m
A
3
4
5
V
R DS(on) Static Drain-source On
Resistance
V GS = 10V I D = 3.6 A
1.0
1.2
W
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
7.2
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
) Forward
Transconductance
V DS > I D(on) x R DS(on)max I D = 3.6 A
4
5.3
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V f = 1 MHz V GS = 0
1250
165
16
1625
223
22
pF
pF
pF
2/9
C/W
o C
434428561.009.png 434428561.010.png 434428561.011.png
STP7NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V GS = 10 V
(see test circuit, figure 3)
W
18
8
27
12
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V I D = 7.2 A V GS = 10 V
30
9.9
13.3
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V DD = 480 V I D = 7.2 A
R G = 4.7
W
8
5
15
12
8
23
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM (
·
)
Source-drain Current
Source-drain Current
(pulsed)
7.2
28.8
A
A
V SD (
*
) Forward On Voltage
I SD = 7.2 A V GS = 0
1.6
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 7.2 A di/dt = 100 A/
m
s
530
ns
V DD = 100 V T j = 150 o C
(see test circuit, figure 5)
Q rr
4.5
m
C
I RRM
17
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
·
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
V DD = 300 V I D = 3.6 A
R G = 4.7
V GS = 10 V
(see test circuit, figure 5)
434428561.012.png
STP7NB60/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
434428561.013.png 434428561.014.png 434428561.015.png 434428561.016.png 434428561.017.png
STP7NB60/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
434428561.018.png 434428561.019.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin