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TIC236 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
DECEMBER 1971 - REVISED MARCH 1997
l High Current Triacs
l 12 A RMS
TO-220 PACKAGE
(TOP VIEW)
l Glass Passivated Wafer
MT1
1
l 400 V to 800 V Off-State Voltage
MT2
2
l Max I GT of 50 mA (Quadrants 1 - 3)
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC236D
TIC236M
TIC236S
TIC236N
V DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
I T(RMS)
12
A
Peak on-state surge current full-sine-wave (see Note 3)
I TSM
100
A
Peak gate current
I GM
±1
A
Operating case temperature range
T C
-40 to +110
°C
Storage temperature range
T stg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
T L
230
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 300 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I DRM
Repetitive peak
off-state current
V D = Rated V DRM
I G = 0
T C = 110°C
±2
mA
I GTM
Peak gate trigger
current
V supply = +12 V†
V supply = +12 V†
V supply = -12 V†
V supply = -12 V†
R L = 10 W
R L = 10 W
R L = 10 W
R L = 10 W
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
5
-11
-20
28
50
-50
-50
mA
V GTM
Peak gate trigger
voltage
V supply = +12 V†
V supply = +12 V†
V supply = -12 V†
V supply = -12 V†
R L = 10 W
R L = 10 W
R L = 10 W
R L = 10 W
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
V TM
Peak on-state voltage I TM = ±17 A
I G = 100 mA
(see Note 4)
±1.5
±2.1
V
I H
Holding current
V supply = +12 V†
V supply = -12 V†
I G = 0
I G = 0
Init’ I TM = 100 mA
Init’ I TM = -100 mA
12
-12
40
-40
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t p = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I L
Latching current
V supply = +12 V†
V supply = -12 V†
(see Note 5)
80
-80
mA
dv/dt
Critical rate of rise of
off-state voltage
V D = Rated V D
I G = 0
T C = 110°C
±400
V/µs
dv/dt (c)
Critical rise of
commutation voltage
V D = Rated V D
di/dt = 0.5 I T(RMS) /ms
T C = 80°C
I T = 1.4 I T(RMS)
±1.2
±2
V/µs
di/dt
Critical rate of rise of
on -state current
V D = Rated V D
di G /dt = 50 mA/ m s
I GT = 50 mA
T C = 110°C
±200
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 W , t p(g) = 20 m s, t r = £ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R q JC
Junction to case thermal resistance
2
°C/W
R q JA Junction to free air thermal resistance
62.5
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
vs
vs
CASE TEMPERATURE
TC08AA
CASE TEMPERATURE
TC08AB
1000
10
100
10
1
1
V supply I GTM
+ +
+ -
- -
- +
V AA = ± 12 V
R L = 10 W
t p(g) = 20 µs
V supply I GTM
+ +
+ -
- -
V AA = ± 12 V
R L = 10 W
t p(g) = 20 µs
}
- + }
0·1
0·1
-60 -40 -20 0
20 40 60 80 100 120
-60 -40 -20
0
20 40 60 80 100 120
T C - Case Temperature - °C
T C - Case Temperature - °C
Figure 1.
Figure 2.
PRODUCT INFORMATION
2
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TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
HOLDING CURRENT
GATE FORWARD VOLTAGE
vs
vs
CASE TEMPERATURE
GATE FORWARD CURRENT
TC08AD
TC08AC
100
10
ALL QUADRANTS
10
1
1
0·1
I A = 0
T C = 25 °C
V AA = ± 12 V
I G = 0
Initiating I TM = 100 mA
QUADRANT 1
0·1
0·01
-60 -40 -20
0
20 40 60 80 100 120
0·0001
0·001
0·01
0·1
1
T C - Case Temperature - °C
I GF - Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
TC08AE
1000
100
10
V supply I GTM
+ +
+ -
- -
- +
V AA = ± 12 V
1
-60 -40 -20 0
20 40 60 80 100 120
T C - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
3
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TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
10,4
1,32
3,71
10,0
2,95
1,23
see Note B
2,54
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
1,70
12,7
0,97
0,61
1,07
1 2 3
2,74
0,64
2,34
0,41
5,28
2,90
4,88
2,40
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT INFORMATION
4
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TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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