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DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BRY61

Programmable unijunction

transistor

Product speciﬁcation

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

1997 Jul 21

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Philips Semiconductors

Product speciﬁcation

Programmable unijunction transistor

BRY61

DESCRIPTION

PINNING

Planar PNPN trigger device in a

SOT23 plastic package.

PIN

DESCRIPTION

1

anode

2

cathode

APPLICATIONS

·

3

gate

Switching applications such as:

– Motor control

– Oscillators

– Relay replacement

– Timers

– Pulse shapers, etc.

handbook, 2 columns

3

handbook, halfpage

anode

a

g

gate

1

2

k

cathode

MGL167

Top view

MGC421

Marking code: A5p.

Fig.1 Simplified outline SOT23 and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V GA

gate-anode voltage

-

70

V

I A(AV)

average anode current

-

175

mA

P tot

total power dissipation

T amb £

25

°

C

-

250

mW

T j

operating junction temperature

-

150

° C

I P

peak point current

V S = 10 V; R G =10k W

-

0.2

m A

I V

valley point current

V S = 10 V; R G =10k

W

2

-

m

A

1997 Jul 21

2

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Philips Semiconductors

Product speciﬁcation

Programmable unijunction transistor

BRY61

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V GA

gate-anode voltage

-

70

V

I A(AV)

average anode current

-

175

mA

I ARM

repetitive peak anode current

t p =10 m s; d = 0.01

-

2.5

A

I ASM

non-repetitive peak anode current t p =10

m

s

-

3

A

dl A /dt

rate of rise of anode current

1 A £

2.5 A

-

20

A/

m

s

P tot

total power dissipation

T amb £

25

°

C

-

250

mW

T stg

storage temperature

- 65

+150

° C

T j

junction temperature

-

150

°

C

T amb

operating ambient temperature

-

65

+150

°

C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-a

thermal resistance from junction to ambient in free air

500

K/W

CHARACTERISTICS

T amb =25

°

C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I P

peak point current

V S = 10 V; R G =10k W ; see Fig.7

-

-

0.2

m A

V S = 10 V; R G = 100 k

W

; see Fig.7

-

-

0.06

m

A

I V

valley point current

V S = 10 V; R G =10k

W

; see Fig.7 2

-

-

m

A

V S = 10 V; R G = 100 k

W

; see Fig.7 1

-

-

m

A

V offset

offset voltage

typical curve; I A = 0; see Fig.7

-

V P - V S

-

V

I GAO

gate-anode leakage current

I K = 0; V GA = 70 V; see Fig.5

-

-

10

nA

I GKS

gate-cathode leakage current

V AK = 0; V KG = 70 V; see Fig.6

-

-

100

nA

V AK

anode-cathode voltage

I A = 100 mA

-

-

1.4

V

V OM

peak output voltage

V AA = 20 V; C = 10 nF;

see Figs 8 and 9

6

-

-

V

t r

rise time

V AA = 20 V; C = 10 nF; see Fig.9

-

-

80

ns

1997 Jul 21

3

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Philips Semiconductors

Product speciﬁcation

Programmable unijunction transistor

BRY61

handbook, full pagewidth

+ 40 V

5 k

W

BZY88-

C8V2

100

m

F

R1

A

750

W

40 K

BY206

(2x)

1 nF

R G

D.U.T

10 k

W

20

W

osc.

V S

MBK189

I P and I V determined by value of R1.

R1

=

1

I A

; i.e. maximum voltage drop over R1 = 1 V.

Internal resistance of oscilloscope = 10 M

W

.

Fig.2 Measuring circuit for peak and valley point currents.

handbook, halfpage

+

V B

handbook, halfpage

I A

R2

R 1 R 2

R G =

DUT

R 1 R 2

R1

V AK

R 1

V S =

V B

DUT

R 1

R 2

MEA141

MBB699

Fig.3 BRY61 with ‘program’ resistors R1 and R2.

Fig.4 Equivalent test circuit for

characteristics testing.

1997 Jul 21

4

----

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Philips Semiconductors

Product speciﬁcation

Programmable unijunction transistor

BRY61

handbook, halfpage

DUT

handbook, halfpage

I GKS

DUT

I GAO

V GA

V GK

MBB697

MBB696

Fig.5 Equivalent test circuit for gate-anode

leakage current.

Fig.6 Equivalent test circuit for gate-cathode

leakage current.

handbook, halfpage

handbook, halfpage

V AA

3.3

M

16 k

½

DUT

C

V O

I (V)

20

½

27 k

½

I (P)

V S

V (P)

V AK

MBB698

MEA143

Fig.7 Offset voltage.

Fig.8 Test circuit for peak output voltage.

1997 Jul 21

5

I A

½

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