BTA06BW.PDF

(69 KB) Pobierz
SNUBBERLESS TRIACS
BTA06 BW/CW
BTB06 BW/CW
SNUBBERLESS TRIACS
. HIGH COMMUTATION : (dI/dt)c > 5A/ms
. HIGH SURGE CURRENT : I TSM =60A
. BTA Family :
INSULATING VOLTAGE = 2500V (RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
A2
The BTA/BTB06 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESS ] concept offer suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductive or resistive load.
G
TO 220 AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360
BTA
Tc = 100
°
C
6
A
°
conduction angle)
BTB
Tc = 105
°
C
I TSM
Non repetitive surge peak on-state current
( Tj initial = 25
tp = 8.3 ms
63
A
°
C)
tp = 10 ms
60
I 2 t
I 2 t value
tp = 10 ms
18
A 2 s
dI/dt
Critical rate of rise of on-state current
Gate supply : I G = 500mA di G /dt = 1A/
Repetitive
F = 50 Hz
20
A/
m
s
m
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
° C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
Symbol
Parameter
BTA / BTB06-... BW/CW
Unit
400
600
700
800
V DRM
V RRM
Repetitive peak off-state voltage
Tj = 125
400
600
700
800
V
°
C
March 1995
1/5
FEATURES
without snubber
. V DRM UP TO 800V
°
11011196.002.png
BTA06 BW/CW / BTB06 BW/CW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
°
C/W
BTB
3.3
Rth (j-c) AC Junction to case for 360
°
conduction angle
BTA
3.3
°
C/W
( F= 50 Hz)
BTB
2.5
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM = 10W (tp = 20
m
s)
I GM =4A(tp=20
m
s)
V GM = 16V (tp = 20
m
s).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
BW
CW
I GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III
MIN
2
1
mA
MAX
50
35
V GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III
MAX
1.5
V
V GD
V D =V DRM R L =3.3k
W
Tj=125
°
C
I-II-III
MIN
0.2
V
tgt
V D =V DRM I G = 500mA
dI G /dt = 3A/
Tj=25
°
C
I-II-III
TYP
2
m
s
m
s
I L
I G =1.2 I GT
Tj=25
°
C
I-III
TYP
40
-
mA
II
TYP
80
-
I-III
MAX
-
50
II
MAX
-
80
I H *
I T = 500mA gate open
Tj=25
°
C
MAX
50
35
mA
V TM
*
I TM = 8.5A tp= 380
m
s
Tj=25
°
C
MAX
1.75
V
I DRM
I RRM
V DRM Rated
V RRM Rated
Tj=25
°
C
MAX
0.01
mA
Tj=125
°
C
MAX
2
dV/dt *
Linear slope up to V D =67%V DRM
gate open
Tj=125
°
C
MIN
500
250
V/
m
s
TYP
750
500
(dI/dt)c * Without snubber
Tj=125
°
C
MIN
5
3.5
A/ms
TYP
10
7
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
11011196.003.png
BTA06 BW/CW / BTB06 BW/CW
ORDERING INFORMATION
Package
I T(RMS)
V DRM /V RRM
Sensitivity Specification
A
V
BW
CW
BTA
(Insulated)
6
400
X
X
600
X
X
700
X
X
800
X
X
BTB
(Uninsulated)
400
X
X
600
X
X
700
X
X
800
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
3/5
11011196.004.png
BTA06 BW/CW / BTB06 BW/CW
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c )
0.1
Zth(j-a)
tp(s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
3
10ms, and
corresponding value of I 2 t.
Fig.9 : On-state characteristics (maximum values).
4/5
11011196.005.png
BTA06 BW/CW / BTB06 BW/CW
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters
Inches
A
H
Min.
Max.
Min.
Max.
G
J
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
I
D
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
B
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
O
F
I
3.55
4.00
0.140
0.158
L
J
1.15
1.39
0.045
0.055
P
C
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
M
N
4.58
5.58
0.18
0.22
==
N
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express writt en approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
11011196.001.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin