SD1650.pdf

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CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS
SD1650
CELLULAR BASE STATION APPLICATIONS
RF & MICROWAVE TRANSISTORS
. REFRACTORY/GOLD METALLIZATION
. DOUBLE STEP INPUT/OUTPUT MATCH
. P OUT = 60 W MIN. WITH 7 dB MIN GAIN
.400 6LFL (M169)
epoxy sealed
ORDER CODE
SD1650
BRANDING
SCELL500
PIN CONNECTION
DESCRIPTION
Designed for 900 MHz cellular radio base station
applications, the SD1650 exhibits high collector
efficiency with excellent thermal characteristics.
Double-section internal input/output matching re-
sult in terminal impedance levels easily handled
by the circuit designer.
1. Collector
3. Emitter
2. Base
ABSOLUTE MAXIMUM RATINGS (T case
=
25 ° C)
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage
60
V
V CEO
Collector-Emitter Voltage
28
V
V EBO
Emitter-Base Voltage
4.0
V
I C
Device Current
10
A
P DISS
Power Dissipation (+25
°
C)
175
W
T J
Junction Temperature
+200
° C
T STG
Storage Temperature
-
65 to +150
° C
THERMAL DATA
R TH(j-c)
Junction-Case Thermal Resistance
1.5
°
C/W
*Applies only to rated RF amplifier operation
August 1992
1/5
. 850-960 MHz CLASS AB LINEAR
. COMMON EMITTER
383843610.002.png
SD1650
ELECTRICAL SPECIFICATIONS (T case
=
25 ° C)
STATIC
Symbol
Test Conditions
Valu e
Unit
Min. Typ. Max.
BV CBO I C
=
50mA
60
—
—
V
BV EBO I E
=
20mA
3.0
—
—
V
BV CES I C
=
100mA
60
—
—
V
BV CEO I C
=
100mA
28
—
—
V
I CEO
V CE
=
24V
—
—
10
mA
h FE
V CE
=
5V
I C
=
6A
20
—
200
—
DYNAMIC
Symbol
Test Conditions
Valu e
Unit
Min. Typ. Max.
P OUT
f
=
900 MHz
P IN
=
12 W
I CQ
=
300 mA
60
—
—
W
h c
f
=
900 MHz
P IN
=
12 W
I CQ
=
300 mA
45
—
—
%
G P
f
=
900 MHz
P IN
=
12 W
I CQ
=
300 mA
7
—
—
dB
VSWR f
=
900 MHz
P IN
=
12 W
3:1
—
—
—
2/5
383843610.003.png
SD1650
TYPICAL PERFORMANCE
BROADBAND POWER OUTPUT
vs POWER INPUT
vs POWER INPUT
BROADBAND POWER OUTPUT
vs FREQUENCY
vs FREQUENCY
90
850 MHz
100
P
O
W
E
R
80
P
O
W
E
R
900 MHz
90
70
60
960 MHz
80
O
U
T
P
U
T
50
O
U
T
P
U
T
70
P IN
=
12 Watts
40
I CQ
=
300 mA
30
60
W
A
T
T
S
20
W
A
T
T
S
50
10
0
40
01234567890123
825
850
875
900
925
950
975
1000
POWER INPUT (WATTS)
POWER INPUT (WATTS)
FREQUENCY (MHz)
FREQUENCY (MHz)
BROADBAND POWER GAIN
vs FREQUENCY
vs FREQUENCY
BROADBAND EFFICIENCY
vs FREQUENCY
vs FREQUENCY
10
60
9.5
55
P
O
W
E
R
9
E
F
F
I
C
I
E
N
C
Y
50
G
A
I
N
8.5
P OUT
=
60 Watts
45
P OUT
=
60 Watts
I CQ
=
300 mA
I CQ
=
300 mA
8
40
d
B
%
7.5
35
7
30
825
850
875
900
925
950
975
1000
825
850
875
900
925
950
975
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
3/5
383843610.004.png
SD1650
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z IN
FREQ.
Z IN (
W
)
Z CL (
W
)
850 MHz
2.4 + j 5.2
4.0
-
j1.3
870 MHz
2.6 + j 5.4
3.9
-
j2.3
TYPICAL COLLECTOR
LOAD IMPEDANCE
900 MHz
3.2 + j 6.3
3.6
-
j2.6
930 MHz
4.1 + j 6.0
3.4
-
j2.4
Z CL
960 MHz
4.7 + j 5.6
3.0
-
j3.0
TEST CIRCUIT
C1,C2 : 220 pF Chip Capacitor ATC Size B
C3 : 10 Microfarad Electrolytic Capacitor
C4,C5 : 220 pF Chip Capacitor ATC Size B
C6,C7 : 1 - 4 pF Johanson Variable Capacitor
D1,D2 : 1N3064 Diode or Equiv
L1,L2 : 5 Turn 1/4” Dia. 16 AWG Coil
Q1
: SD1438-02 or Equiv.
R1
: 5K
W
Potentiometer
R2
: 100
W
1/4 Watt Resistor
Er
=
10.2 H
=
.025in.
4/5
383843610.005.png
SD1650
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0169
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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