2SC2873.pdf

2SC2873

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SC2873

Power Amplifier Applications

Power Switching Applications

Unit: mm

• Low saturation voltage: V CE (sat) = 0.5 V (max) (I C = 1 A)

• High speed switching time: t stg = 1.0 µs (typ.)

• Small flat package

• P C = 1.0 to 2.0 W (mounted on ceramic substrate)

• Complementary to 2SA1213

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

V CBO

Collector-emitter voltage

V CEO

Emitter-base voltage

V EBO

Collector current

I C

Base current

I B

0.4

JEDEC ―

P C

500

Collector power dissipation

P C

(Note 1)

1000

JEITA

SC-62

TOSHIBA

2-5K1A

Junction temperature

T j

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

T stg −55 to 150 °C

Note 1: Mounted on ceramic substrate (250 mm 2 × 0.8 t)

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2SC2873

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

I CBO

V CB = 50 V, I E = 0

― ―

0.1

µA

Emitter cut-off current

I EBO

V EB = 5 V, I C = 0

― ― 0.1

µA

Collector-emitter breakdown voltage

V (BR) CEO C = 10 mA, I B = 0

50 ― ―

DC current gain

h FE (1)

(Note 2)

V CE = 2 V, I C = 0.5 A

70 ― 240

―

h FE (2)

CE = 2 V, I C = 2.0 A

20 ― ―

Collector-emitter saturation voltage

V CE (sat) I C = 1 A, I B = 0.05 A

― ―

0.5

Base-emitter saturation voltage

V BE (sat)

I C = 1 A, I B = 0.05 A

― ― 1.2 V

Transition frequency

f T

V CE = 2 V, I C = 0.5 A

― 120 ―

MHz

Collector output capacitance

C ob

CB = 10 V, I E = 0, f = 1 MHz ― 30 ―

Turn-on time

t on

OUTPUT

―

0.1 ―

I B 1

2 0 µ s

IN PUT

Switching time

Storage time

t stg

I B1

I B2

― 1.0 ―

µs

I B2

Fall time

t f

I B1 = −I B2 = 0.05 A,

DUTY CYCLE ≤ 1%

― 0.1 ―

Note 2: h FE (1) classification O: 70 to 140, Y: 120 to 240

Marking

Type name

h FE classifi c ation

M O

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2SC2873

V CE – I C

1.6

Common emitter

Ta = 25°C

Common emitter

Ta = 100°C

1.2

0.8

IB = 5 mA

0.8

I B = 3 mA

0.4

3 0

0.4

0.8

1.2

1.6

2.0

0.4

0.8

1.2

1.6

2.0

Collector current I C (A)

V CE – I C

h FE – I C

1.6

1000

Common emitter

Ta = − 55°C

500

Common emitter

V CE = 2 V

1.2

300

Ta = 100°C

100

0.8

IB = 5 mA

− 55

0.4

100

300

1000

3000

0.4

0.8

1.2

1.6

2.0

Collector current I C (mA)

Collector current I C (A)

V CE (sat) – I C

V BE (sat) – I C

0.5

Common emitter

IC/IB = 20

Common emitter

I C /I B = 20

0.3

Ta = − 55°C

0.1

Ta = 100° C

0.05

0.5

100

0.03

0.3

− 55

0.01

100

300

1000

3000

0.1

100

300

1000

3000

Collector current I C (mA)

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2SC2873

I C – V BE

Safe Operating Area

2.0

5000

I C max (pulse) *

I C max (continuous)

Common emitter

V CE = 2 V

3000

1 ms *

10 ms *

100 ms *

1.5

1000

1 S *

500

Ta = 100°C

− 55

300

1.0

DC operation

Ta = 25°C

100

0.5

* : Single no repetitive pulse

Ta = 25°C

Curves must be derated linearly

with increase in temperature

Tested without a substrate

0.4

0.8

1.2

1.6

2.0

VCEO max

Base-emitter voltage V BE (V)

0.1

0.3

100

Collector-emitter voltage V CE (V)

P C – Ta

1.2

1.0

(1)

(1) Mounted on ceramic substrate

(250 mm 2 × 0.8 t)

(2) No heat sink

0.8

0.6

(2)

0.4

0.2

100 120 140 160

Ambient temperature Ta (°C)

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2SC2873

RESTRICTIONS ON PRODUCT USE

000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

2002-08-13

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