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2SC2983
2SC2983
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
• High transition frequency: f
T
= 100 MHz (typ.)
• Complementary to 2SA1225
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
160
V
Collector-emitter voltage
V
CEO
160
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
1.5
A
Base current
I
B
0.3
A
Collector power
dissipation
Ta = 25°C
1.0
P
C
W
Tc = 25°C
15
JEDEC ―
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
−55 to 150
°C
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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2SC2983
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
CB
= 160 V, I
E
= 0
― ―
1.0
µA
Emitter cut-off current
I
EBO
EB
= 5 V, I
C
= 0
― ―
1.0
µA
Collector-emitter breakdown voltage
V
(BR) CEO
C
= 10 A, I
B
= 0
160 ― ―
V
Emitter-base breakdown voltage
V
(BR) EBO
E
= 1 mA, I
C
= 0
5 ― ―
V
DC current gain
h
FE
(Note)
V
CE
= 5 V, I
C
= 100 mA
70 ―
240
Collector emitter saturation voltage
V
CE (sat)
I
C
= 500 mA, I
B
= 50 mA
― ―
1.5
V
Base-emitter voltage
V
BE
CE
= 5 V, I
C
= 500 mA
― ―
1.0
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 100 mA
―
100 ―
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz ―
25 ―
pF
Note: h
FE
classification O: 70 to 140, Y: 120 to 240
Marking
C2983
Product No.
Lot No.
h
FE
Classification
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
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2SC2983
I
C
– V
CE
h
FE
– I
C
1.2
500
Common emitter
V
CE
= 5 V
2
0
12
Common emitter
Tc = 25°C
300
Tc = 100°C
1.0
8
25
6
100
0.8
−25
50
0.6
4
30
0.4
10
0.003
I
B
= 2 mA
0.01
0.03
0.1
0.3
1
0.2
Collector current I
C
(A)
0
0
0
2
4
6
8
10
12
14
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
f
T
– I
C
1
300
0.5
Common emitter
I
C
/I
B
= 10
Common emitter
V
CE
= 10 V
Tc = 25°C
0.3
100
Tc = 100°C
25
0.1
−25
50
0.05
30
0.003
0.01
0.03
0.1
0.3
1
10
−5 −10 −30 −100 −300 −1000
Collector current I
C
(mA)
Collector current I
C
(mA)
Safe Operating Area
5
P
C
– Ta
I
C
max (pulsed)*
3
IC max
(continuous)
1 ms*
10 ms
24
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
1
20
0.5
16
(1)
0.3
DC operation
Tc = 25°C
12
0.1
8
0.05
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.03
4
(2)
(3)
V
CEO
max
0
0
20
40
60
80 100 120 140 160
0.01
1
3
10
30
100
300
Ambient temperature Ta (°C)
Collector-emitter voltage V
CE
(V)
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0.02
2SC2983
RESTRICTIONS ON PRODUCT USE
000707EAA
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
•
The information contained herein is subject to change without notice.
4
2002-07-23
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