2SC2881.pdf

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2SC2881
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
Unit: mmç
•
High voltage: V CEO = 120 V
•
High transition frequency: f T = 120 MHz (typ.)
•
Small flat package
•
P C = 1.0 to 2.0 W (mounted on ceramic substrate)
•
Complementary to 2SA1201
Maximum Ratings (Ta = 25°C) çççç
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
120
V
Collector-emitter voltage
V CEO
120
V
Emitter-base voltage
V EBO
5
V
Collector current
I C
800
mA
Base current
I B
160
mA
PW-MINI
JEDEC ―
P C
500
Collector power dissipation
P C
(Note 1)
1000
mW
JEITA
SC-62
TOSHIBA
2-5K1A
Junction temperature
T j
150
°C
Weight: 0.05 g (typ.)
Storage temperature range
T stg −55 to 150
°C
Note 1: Mounted on ceramic substrate (250 mm 2 × 0.8 t)
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2SC2881
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 120 V, I E = 0
―
―
0.1
µA
Emitter cut-off current
I EBO
V EB = 5 V, I C = 0
―
―
0.1
µA
Collector-emitter breakdown voltage
V (BR) CEO C = 10 mA, I B = 0
120 ―
―
V
Emitter-base breakdown voltage
V (BR) EBO E = 1 mA, I C = 0
5 ― ―
V
DC current gain
h FE
(Note 2)
V CE = 5 V, I C = 100 mA
80 ―
240 ―
Collector-emitter saturation voltage
V CE (sat) I C = 500 mA, I B = 50 mA
― ―
1.0
V
Base-emitter voltage
V BE
V CE = 5 V, I C = 500 mA
― ―
1.0
V
Transition frequency
f T
V CE = 5 V, I C = 100 mA
―
120 ―
MHz
Collector output capacitance
C ob
V CB = 10 V, I E = 0, f = 1 MHz ― ―
30
pF
Note 2: h FE classification O: 80 to 160, Y: 120 to 240
Marking
Type name
h FE classification
C O
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2SC2881
I C – V CE
h FE – I C
800
1000
20
Common emitter
Ta
Common emitter
V CE
50
10
=
25°C
500
=
5 V
600
300
5
Ta
=
100°C
25
−
400
3
100
25
2
50
200
30
I B
=
1 mA
0
0
10
0
4
8
12
16
3
10
30
100
300
1000
Collector-emitter voltage V CE (V)
Collector current I C (mA)
V CE (sat) – I C
I C – V BE
1
1.0
Common emitter
I C /I B
=
10
Common emitter
V CE
=
5 V
0.5
0.8
0.3
0.6
0.4
Ta
=
100°C
25
−
25
0.1
Ta
=
100°C
25
0.2
0.05
−
25
0.03
3
10
30
100
300
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector current I C (mA)
Base-emitter voltage V BE (V)
Safe Operating Area
3000
IC max (pulse) *
1000
IC max (continuous)
1 ms *
P C – Ta
10 ms *
500
1.2
100 ms *
300
(1) Mounted on ceramic substrate
(250 mm 2 × 0.8 t)
(2) No heat sink
1.0
(1)
100
DC operation Ta
=
25°C
0.8
50
30
0.6
(2)
10
* : Single nonrepetitive pulse
Ta
0.4
5
25°C
Curves must be derated
linearly with increase in
temperature
Tested without a substrate
=
3
0.2
V CEO max
0.3
1
3
10
30
100
300
0
0
20
40
60
80
100 120 140 160
Collector-emitter voltage V CE (V)
Ambient temperature Ta (°C)
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2SC2881
RESTRICTIONS ON PRODUCT USE
000707EAA
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
•
The information contained herein is subject to change without notice.
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