2SC2879.pdf

2SC2879

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2879

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS

(LOW SUPPLY VOLTAGE USE)

Unit in mm

Specified 12.5V, 28MHz Characteristics

Output Power : Po = 100W PEP

Power Gain : Gp = 13dB

Collector Efficiency : η C = 35% (Min.)

Intermodulation Distortion: IMD = −24dB(Max.)

(MIL Standard)

MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V CBO

Collector-Emitter Voltage

V CES

Collector-Emitter Voltage

V CEO

Emitter-Base Voltage

V EBO

Collector Current

I C

Collector Power Dissipation

P C

250

JEDEC

—

EIAJ

—

Junction Temperature

T j

175

°C

2–13B1A

TOSHIBA

Storage Temperature Range

T stg −65~175

°C

Weight: 5.2g

000707EAA1

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

• The information contained herein is subject to change without notice.

2001-01-31 1/3

2SC2879

ELECTRICAL CHARACTERISTICS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN. TYP. MAX. UNIT

Collector-Emitter Breakdown Voltage

V (BR) CEO C = 100mA, I B = 0

—

Collector-Emitter Breakdown Voltage

V (BR) CES I C = 100mA, V EB = 0

—

Emitter-Base Breakdown Voltage

V (BR) EBO I E = 1mA, I C = 0

—

DC Current Gain

h FE

V CE = 5V, I C = 10A

—

150

Collector Output Capacitance

C ob

V CB = 12.5V, I E = 0

f = 1MHz

—

700

—

Power Gain

G p

13.0 15.2

—

V CC = 12.5V, f 1 = 28.000MHz

f 2 = 28.001MHz

I idle = 100mA

Po = 100W PEP .(Fig.)

Input Power

—

W PEP

Collector Efficiency

η C

—

Intermodulation Distortion

IMD

—

— −24

Series Equivalent Input Impedance

Z in

—

1.45

−j0.95

— Ω

V CC = 12.5V, f = 28MHz

∆f = 1kHz, Po = 100W PEP

Series Equivalent Output Impedance

Z out

—

1.45

−j1.0

— Ω

CAUTION

Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush

or dissolve chemically. Dispose of this properly according to law. Do not intermingle with normal industrial or

domestic waste.

2001-01-31 2/3

2SC2879

Fig. Pi TEST CIRCUIT

CAUTION

These are only typical curves and devices are not necessarily guaranteed at these curves.

2001-01-31 3/3

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