2SC2669.pdf

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2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
• High power gain: G pe = 30dB (typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
35
V
Collector-emitter voltage
V CEO
30
V
Emitter-base voltage
V EBO
4
V
Collector current
I C
50
mA
Base current
I B
10
mA
Collector power dissipation
P C
200
mW
Junction temperature
T j
125
°C
Storage temperature range
T stg
− 55~125
°C
JEDEC ―
JEITA
―
TOSHIBA
2-4E1A
Electrical Characteristics (Ta = 25°C)
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 35 V, I E = 0
0.1 µ A
Emitter cut-off current
I EBO
V EB = 4 V, I C = 0
1.0 µ A
DC current gain
h FE
(Note)
V CE = 12 V, I C = 2 mA
40
240
Collector-emitter saturation voltage
V CE (sat) I C = 10 mA, I B = 1 mA
 
0.4
V
Base-emitter voltage
V BE
I C = 10 mA, I B = 1 mA
 
1.0
V
Transition frequency
f T
V CE = 10 V, I C = 1 mA
100
MHz
Collector output capacitance
C ob
CB = 10 V, I E = 0, f = 1 MHz
2.0
3.2
pF
Collector-base time constant
C c ･ r bb’
V CE = 10 V, I E = − 1 mA, f = 30 MHz
50
ps
Power gain
G pe
V CC = 6 V, I E = − 1 mA, f = 10.7 MHz
(Figure 1)
27
30
33
dB
Note: h FE classification R: 40~80, O: 70~140, Y: 120~240
1
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383871390.012.png 383871390.013.png 383871390.014.png
2SC2669
Figure 1 G pe Test Circuit
Y Parameters (typ.)
(1) (common emitter f = 455 kHz, Ta = 25 °C)
Characteristics
Symbol
2SC2669-R
2SC2669-O
2SC2669-Y
Unit
Collector-emitter voltage
V CE
6
6
6
V
Emitter current
I E
− 1
− 1
− 1
mA
Input conductance
g ie
0.58
0.41
0.26
mS
Input capacitance
C ie
53
46
38
pF
Output conductance
g oe
1.9
2.7
4.8
µ S
Output capacitance
C oe
2.6
2.8
3.6
pF
Forward transfer admittance
y fe
38
38
38
mS
Phase angle of forward transfer
admittance
θ fe
− 0.79
− 0.83
− 0.92
°
Reverse transfer admittance
y re
5.7
5.7
6.2
µ S
Phase angle of reverse transfer
admittance
θ re
− 90
− 90
− 90
°
(2) (common emitter f = 10.7 MHz, Ta = 25°C)
Characteristics
Symbol
2SC2669-R
2SC2669-O
2SC2669-Y
Unit
Collector-emitter voltage
V CE
6
6
6
V
Emitter current
I E
− 1
− 1
− 1
mA
Input conductance
g ie
1.04
0.85
0.65
mS
Input capacitance
C ie
49
43
36
pF
Output conductance
g oe
10
15
28
µ S
Output capacitance
C oe
2.7
2.9
3.6
pF
Forward transfer admittance
y fe
37
37
37
mS
Phase angle of forward transfer
admittance
θ fe
− 9.6
− 10.4
− 11.5
°
Reverse transfer admittance
y re
120
120
140
µ S
Phase angle of reverse transfer
admittance
θ re
− 90
− 90
− 90
°
2
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