2SC2551.pdf

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2SC2551
2SC2551
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Industrial Applications
Unit: mm
• High voltage: V CBO = 300 V, V CEO = 300 V
• Low saturation voltage: V CE (sat) = 0.5 V (max)
• Small collector output capacitance: C ob = 3 pF (typ.)
• Complementary to 2SA1091.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
300
V
Collector-emitter voltage
V CEO
300
V
Emitter-base voltage
V EBO
6
V
Collector current
I C
100
mA
Base current
I B
20
mA
JEDEC
TO-92
Collector power dissipation
P C
400
mW
JEITA
SC-43
Junction temperature
T j
150
°C
TOSHIBA
2-5F1B
Storage temperature range
T stg
55~150
°C
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
CB = 300 V, I E = 0
 
0.1 µ A
Emitter cut-off current
I EBO
EB = 6 V, I C = 0
0.1 µ A
Collector-base breakdown voltage
V (BR) CBO C = 0.1 mA, I E = 0
300
V
Collector-emitter breakdown voltage
V (BR) CEO C = 1 mA, I B = 0
300
V
DC current gain
h FE (1)
(Note)
V CE = 10 V, I C = 20 mA
30
150
h FE (2)
CE = 10 V, I C = 1 mA
20
Collector-emitter saturation voltage
V CE (sat) I C = 20 mA, I B = 2 mA
0.5
V
Base-emitter saturation voltage
V BE (sat) I C = 20 mA, I B = 2 mA
50
1.2
V
Transition frequency
f T
V CE = 10 V, I C = 20 mA
80
MHz
Collector output capacitance
C ob
CB = 20 V, I E = 0, f = 1 MHz
3
4
pF
Note: h FE (1) classification R: 30~90, O: 50~150
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RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
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