SD4701.pdf

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331515533 UNPDF
SD4701
CELLULAR BASE STATION APPLICATIONS
RF & MICROWAVE TRANSISTORS
. DESIGNED FOR CLASS AB LINEAR
OPERATION
. INTERNAL INPUT/OUTPUT MATCHING
. 26 VOLT, 960 MHz PERFORMANCE:
P OUT =
45 W MIN.
. INHERENT RUGGEDNESS:
LOAD MISMATCH TOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVE CAPABILITY
=
.400 x .425 6LFL (M169)
epoxy sealed
ORDER CODE
SD4701
BRANDING
SD4701
PIN CONNECTION
DESCRIPTION
1. Collector
3. Emitter
2. Base
ABSOLUTE MAXIMUM RATINGS (T case
=
25 ° C)
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage
60
V
V CEO
Collector-Emitter Voltage
30
V
V CER
Collector-Emitter Voltage
40
V
V EBO
Emitter-Base Voltage
3.5
V
I C
Device Current
10
A
P DISS
Power Dissipation
145
W
T J
Junction Temperature
+200
° C
T STG
Storage Temperature
-
65 to +150
° C
THERMAL DATA
R TH(j-c)
Junction-Case Thermal Resistance
1.2
°
C/W
May 1993
1/6
. COMMON EMITTER
GAIN
8.5 dB MIN.
COLLECTOR EFFICIENCY 50% MIN.
331515533.002.png
SD4701
ELECTRICAL SPECIFICATIONS (T case
=
25 ° C)
STATIC
Symbol
Test Conditions
Value
Unit
Min. Typ. Max.
BV CBO I C
=
60 mA
I E
=
0mA
60 — —
V
BV CEO I C
=
60 mA
I B
=
0mA
30 — —
V
BV CER I C
=
60 mA
R BE
=
75
W
40
—
—
V
BV EBO I E
=
10 mA
I C
=
0mA
3.5 — —
V
I CER
V CE
=
26 V
R BE
=
75
W
——5 A
FE
V CE
=
10 V
I C
=
1 A
15
— 100
—
DYNAMIC
Symbol
Test Conditions
Value
Unit
Min. Typ. Max.
C OB
26 V
For Information Only - This Device is Collector Matched
=
1 MHz
V CB
=
—5— F
IN
f
=
960 MHz V CE =
26 V I CQ =
200 mA P OUT =
45 W
—
5
6.3
W
P OUT
f
=
960 MHz V CE =
26 V I CQ =
200 mA P IN
=
6.3 W
45
55
—
W
G P
f
=
960 MHz V CE =
26 V I CQ =
200 mA P OUT =
45 W
8.5 9.5
—
dB
h c
f
=
960 MHz V CE =
26 V I CQ =
200 mA P OUT =
45 W
50
55
—
%
Load
Mismatch
f
=
960 MHz V CE =
26 V I CQ =
200 mA P OUT =
45 W
No Degradation in
Device Performance
VSWR
=
5:1 MIN. @ All Phase Angles
OVD
f
=
960 MHz V CE =
26 V I CQ =
200 mA
No Degradation in
Device Performance
Set P OUT =
45 W; Increase P IN 3dB
*IMD 3
V CE
=
26 V
P OUT =
46.5 dBm (45.0W) PEP
—
-
32 — dBT**
I CQ =
200 mA
*Note: f 1
=
900.00MHz @ 40.5dBm
** dBT, i n dB, referenced to tone level
=
f 2
900.01MHz @ 40.5dBm
2/6
f
331515533.003.png
SD4701
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
910MHz
P IN
= 10W
P IN
=
7W
960MHz
P IN
=
6.3W
860MHz
V CE
=
26V
V CE
=
26V
I CQ
=
200mA
I CQ
=
200mA
POWER OUTPUT vs SUPPLY VOLTAGE
BROADBAND PERFORMANCE
P IN
=
10W
P IN
=
7W
P G
h C
P IN
=
6.3W
R L
P OUT
=
45W
V CE
=
26V
FREQ
=
960MHz
I CQ
=
200mA
I CQ
=
200mA
3/6
331515533.004.png
SD4701
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
26V
P OUT =
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z IN
45W
Z CL
200mA
R L < 10dB
Z IN
860 MHz
960 MHz
FREQ.
Z IN (
W
)
Z CL (
W
)
860 MHz 5.20 + j 6.70 5.20
-
j 4.45
870 MHz 5.15 + j 6.20 5.15
-
j 4.50
880 MHz 5.05 + j 5.70 5.10
-
j 4.55
890 MHz 5.00 + j 5.15 4.90
-
j 4.80
900 MHz 4.95 + j 4.80 4.80
-
j 5.10
915 MHz 4.95 + j 4.50 4.50
-
j 5.20
930 MHz 4.95 + j 4.40 4.00
-
j 4.90
945 MHz 4.90 + j 4.25 3.85
-
j 4.65
Z CL
960 MHz 4.80 + j 4.10 3.70
-
j 4.35
860 MHz
960 MHz
Normalized to 10 ohms
4/6
V CE =
I CQ =
331515533.005.png
SD4701
TEST CIRCUIT
C1, C2 : 1.3 pF ATC 100B Chip Capacitor
C3, C7 : 430 pF ATC 100B Chip Capacitor
C4, C5 : 0.6 - 4.5 pF Johanson Variable Capacitor
C6 : 0.7 pF ATC 100B Chip Capacitor
C8 : 470 pF ATC 100B Chip Capacitor
C9, C12 : 221 pF ATC 100B Chip Capacitor
C10, C11 : 47
L1 : 5 Turns #22 AWG 0.16” I.D. 1T:1 Air Choke
R1 + Fb : 11
W
1
⁄
8 W Resistor + FB VK-200
R3
: 11
W
1
⁄
8 W Resistor
R4
: 100
W
1
⁄
8 W Resistor
P1
: 1k
W
, 1 Turn Potentiometer
m
F, 50V, Electrolytic Capacitor
Board Material: 1 oz
=
2 sides, Thickness 31.25 mils, Er
=
2.55
TEST CIRCUIT PHOTOMASTER
5/6
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