rd100hhf1.pdf

(179 KB) Pobierz
RF POWER MOSFET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
2
0.1 +0.05
-0.01
R1.6+/-0.15
3
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
5.0+/-0.3
4.5+/-0.7
18.5+/-0.3
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
ABSOLUTE MAXIMUM RATINGS
(Tc=25 °C UNLESS OTHERWISE NOTED)
SYMBOL
UNIT:mm
PARAMETER
CONDITIONS RATINGS UNIT
V DSS
Drain to source voltage
Vgs=0V
50
V
V GSS
Gate to source voltage
Vds=0V
+/-20
V
Pch
Channel dissipation
Tc=25 °C
176.5
W
Pin
Input power
Zg=Zl=50
12.5
W
ID
Drain current
-
25
A
Tch
Channel temperature
-
175
°C
Tstg
Storage temperature
-
-40 to +175 °C
Rth j-c
Thermal resistance
junction to case
0.85
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25 °C UNLESS OTHERWISE NOTED)
LIMITS
PARAMETER
CONDITIONS
UNIT
MIN TYP MAX.
I DSS Zerogate voltage drain current V DS =17V, V GS =0V
-
-
10
uA
I GSS Gate to source leak current V GS =10V, V DS =0V
-
-
1
uA
V TH Gate threshold voltage
V DS =12V, I DS =1mA
1.5
-
4.5
V
Pout Output power
f=30MHz ,V DD =12.5V
100 110
-
W
D
Drain efficiency
Pin=7W, Idq=1.0A
55
60
-
%
Load VSWR tolerance
V DD =15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
No destroy
-
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
1/7
SYMBOL
331541235.015.png 331541235.016.png 331541235.017.png 331541235.018.png
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
200
10
Ta=+25°C
Vds=10V
160
8
120
6
80
4
40
2
0
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
01234567
Vgs(V)
Vds-Ids CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
10
Vgs=6V
300
Ta=+25°C
8
Vgs=5.7V
250
Ta=+25°C
f=1MHz
200
6
Vgs=5.4V
150
4
Vgs=5.1V
100
2
Vgs=4.8V
50
Vgs=4.5V
0
Vgs=4.2V
0
0
10
20
30
0
2
4
6
8
10
Vds(V)
Vds(V)
Vds VS. Coss CHARACTERISTICS
Vds VS. Crss CHARACTERISTICS
500
40
400
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
30
300
20
200
100
10
0
0
0
10
20
30
0
10
20
30
Vds(V)
Vds(V)
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
2/7
331541235.001.png
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
120
80
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=1A
50
Po
100
100
Po
70
40
80
ηd
80
60
ηｄ
30
Gp
60
60
50
20
40
40
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=1A
40
10
20
20
Idd
30
Ｉｄｄ
0
0
0
20
0
10
20
30
40
0
2
4
6
8
10
Pin(dBm)
Pin(W)
Vdd-Po CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
+25°C
140
28
10
26
Ta=25°C
f=30MHz
Pin=7W
Idq=1A
Zg=ZI=50 ohm
Vds=10V
Tc=-25~+75°C
120
24
8
22
Po
100
20
18
80
16
6
14
Idd
60
12
4
10
+75°C
40
8
20
6
2
-25°C
2
0
0
0
4
6
8
10
12
14
01234567
Vgs(V)
Vdd(V)
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
3/7
4
331541235.002.png 331541235.003.png
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TEST CIRCUIT(f=30MHz)
Vgg
Vdd
L2
330uF,50V
C1
2.7kOHM*2
0-50p F
220/56p F
C2
7 2/72/82pF
20kOHM
L1
C3
L3
4.7OHM*2
RF-IN
L4
C4
RF-OUT
100OHM
82/220pF
0-50pF
110pF
220/56pF
0-110pF
30/30pF
270pF
14
4.5
35
12
44
47
20
35
60
50
52
82
84
54
86
87
90
100
100
12
C1:330pF*3,0.022uF in parallel
8
C2:33uF*2,220pF in parallel
C3:68pF,82pF in parallel
14
C4:15pF,18pF in parallel
L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
Dimensions:mm
L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
Note:Board material-teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
4/7
331541235.004.png 331541235.005.png 331541235.006.png 331541235.007.png 331541235.008.png 331541235.009.png 331541235.010.png 331541235.011.png
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=10
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f
Zin
Zout
(MHz)
(ohm)
(ohm)
Conditions
30
8.86-j14.31
0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
5/7
331541235.012.png 331541235.013.png 331541235.014.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin