bd140.pdf

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD136/D

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

•

DC Current Gain — h FE = 40 (Min) @ I C = 0.15 Adc

1.5 AMPERE

POWER TRANSISTORS

PNP SILICON

45, 60, 80 VOLTS

10 WATTS

•

BD 136, 138, 140 are complementary with BD 135, 137, 139

CASE 77–08

TO–225AA TYPE

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

V CEO

BD 136

BD 138

BD 140

Vdc

Collector–Base Voltage

V CBO

BD 136

BD 138

BD 140

100

Vdc

Emitter–Base Voltage

V EBO

Vdc

Collector Current

I C

1.5

Adc

Base Current

I B

0.5

Adc

Total Device Dissipation@ T A = 25 C

Derate above 25 C

P D

1.25

Watts

mW/ C

Total Device Dissipation @ T C = 25 C

Derate above 25 C

P D

12.5

100

Watt

mW/ C

Operating and Storage Junction

Temperarture Range

T J , T stg

– 55 to + 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

q JC

C/W

Thermal Resistance, Junction to Ambient

q JA

100

C/W

REV 7

Motorola Bipolar Power Transistor Device Data

Motorola, Inc. 1995

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

(I C = 0.03 Adc, I B = 0)

BV CEO

Vdc

BD 136

BD 138

BD 140

—

Collector Cutoff Current

(V CB = 30 Vdc, I E = 0)

(V CB = 30 Vdc, I E = 0, T C = 125 C)

I CBO

m Adc

—

0.1

Emitter Cutoff Current

(V BE = 5.0 Vdc, I C = 0)

I EBO

—

m Adc

DC Current Gain

(I C = 0.005 A, V CE = 2 V)

—

ALL

h FE *

—

250

(I C = 0.15 A, V CE = 2 V)

ALL

BD140–10

160

—

(I C = 0.5 A, V CE = 2 V)

Collector–Emitter Saturation Voltage*

(I C = 0.5 Adc, I B = 0.05 Adc)

V CE(sat) *

—

0.5

Vdc

Base–Emitter On Voltage*

(I C = 0.5 Adc, V CE = 2.0 Vdc)

V BE(on) *

—

Vdc

* Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.

5.0

0.1 ms

2.0

1.0

0.5

5 ms

0.5 ms

T J = 125 ° C

0.2

0.1

0.05

BD136

BD138

BD140

0.02

0.01

V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active–Region Safe Operating Area

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

–B–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–A–

INCHES

MILLIMETERS

DIM MIN

MAX

MIN

MAX

0.425 0.435 10.80 11.04

0.295 0.305

7.50

7.74

0.095 0.105

2.42

2.66

0.020 0.026

0.51

0.66

0.115 0.130

2.93

3.30

0.094 BSC

2.39 BSC

0.050 0.095

1.27

2.41

0.015 0.025

0.39

0.63

0.575 0.655 14.61 16.63

5 TYP

Q 0.148 0.158

3.76

4.01

0.045 0.055

1.15

1.39

0.25 (0.010)

B M

0.025 0.035

0.64

0.88

0.145 0.155

3.69

3.93

2 PL

0.040

–––

1.02

–––

0.25 (0.010)

B M

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

CASE 77–08

TO–225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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