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AP40T03GS/P
Pb Free Plating Product
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
D
D
BV
DSS
30V
▼
Simple Drive Requirement
▼
Low Gate Charge
R
DS(ON)
25m
Ω
I
D
28A
▼
Fast Switching
G
G
▼
RoHS Compliant
S
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03J) are available for low-profile applications.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03GP) are available for low-profile applications.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-Source Voltage
±25
V
Continuous Drain Current, V
GS
@ 10V
I
D
@T
A
=25
℃
28
A
Continuous Drain Current, V
GS
@ 10V
I
D
@T
A
=100
℃
24
A
Pulsed Drain Current
1
I
DM
95
A
P
D
@T
A
=25
℃
Total Power Dissipation
31.25
W
W/
℃
Linear Derating Factor
0.25
T
STG
Storage Temperature Range
-55 to 150
℃
T
J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃
/W
Data and specifications subject to change without notice
200331053-1/4
AP40T03GS/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.032
-
/
℃
ΔB
V
DSS
/
Δ
T
j
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=18A
-
-
25
m
Ω
V
GS
=4.5V, I
D
=14A
-
-
45
m
Ω
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=18A
-
15
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
uA
V
DS
=30V, V
GS
=0V
-
-
1
Drain-Source Leakage Current (T
j
=150
o
C)
uA
V
DS
=24V ,V
GS
=0V
-
-
25
I
GSS
nA
Gate-Source Leakage
V
GS
= ±25V
-
-
±100
Total Gate Charge
2
nC
Q
g
I
D
=18A
-
8.8
-
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
2.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
5.8
-
Turn-on Delay Time
2
t
d(on)
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=18A
-
62
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
Ω,
V
GS
=10V
-
16
-
ns
t
f
Fall Time
R
D
=0.83
Ω
-
4.4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
655
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
145
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
S
V
D
=V
G
=0V , V
S
=1.3V
-
-
28
A
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
I
SM
-
-
95
A
Forward On Voltage
2
V
SD
T
j
=25
℃
, I
S
=28A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width
<
300us , duty cycle
<
2%.
2/4
AP40T03GS/P
90
75
10V
8 .0V
T
C
=25
o
C
10V
8 .0V
T
C
=150
o
C
6 .0V
60
50
6 .0V
30
25
V
G
=4.0V
V
G
=4.0V
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
70
I
D
=18A
V
G
=10V
I
D
=14A
T
C
=25
℃
1.4
50
0.8
30
0.2
10
-50
0
50
100
150
0
5
10
15
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.5
2.0
10
T
j
=25
o
C
T
j
=150
o
C
1.5
1
1.0
0.1
0.5
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP40T03GS/P
f=1.0MHz
12
1000
I
D
=18A
C
iss
9
V
DS
=10V
V
DS
=15V
V
DS
=20V
C
oss
C
rss
6
100
3
0
10
0
3
6
9
12
1
8
15
22
29
V
DS
,Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
0.2
100us
0.1
10
0.1
0.05
P
DM
0.02
0.01
t
1ms
T
T
C
=25
o
C
Single Pulse
Single Pulse
10ms
100ms
DC
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
V
G
90%
Q
G
4.5V
Q
GD
Q
GS
10%
V
GS
t
d(off)
t
f
t
r
t
d(on)
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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