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BAT 64...W
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
3
Integrated diffused guard ring
·
Low forward voltage
2
1
VSO05561
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
63s
64s
65s
66s
Q62702-A1159
Q62702-A1160
Q62702-A1161
Q62702-A1162
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
250
120
mA
Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t
<
100
m
s)
I
FSM
800
Total power dissipation BAT 64W , T
S
£
120°C P
tot
250
mW
Total power dissipat. BAT64-04/06W , T
S
£
111°C
P
tot
250
Total power dissipation BAR 64-05W , T
S
£
104°C P
tot
250
150
Junction temperature
Storage temperature
T
j
°C
T
stg
-55...+150
Semiconductor Group
1
1
Sep-07-1998
1998-11-01
·
·
Semiconductor Group
BAT 64...W
Thermal Resistance
Junction - ambient
1)
BAT 64W
R
thJA
£
255
K/W
Junction - ambient
1)
BAT 64-04/06W
R
thJA
£
290
Junction - ambient
1)
BAT 64-05W
R
thJA
R
thJS
£
455
Junction - soldering point BAT 64W
£
120
Junction - soldering point BAT 64-04/06W
R
thJS
£
155
Junction - soldering point BAT 64-05W
R
thJS
£
185
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Electrical Characteristics
at T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
2
µA
Reverse current
V
R
= 30 V, T
A
= 85 °C
I
R
-
-
200
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
F
-
-
-
-
320
385
440
570
350
430
520
750
mV
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
C
T
-
4
6
pF
Semiconductor Group
2
2
Sep-07-1998
1998-11-01
Semiconductor Group
BAT 64...W
Forward current
I
F
= f (V
F
)
T
A
= Parameter
Reverse current
I
R
= f (V
R
)
T
A
= Parameter
2
BAT 64...
EHB00057
10
2
BAT 64...
EHB00058
10
mA
I
R
m
A
I
F
T
= 125
C
10
1
1
10
85
C
T
= -40
25
85
125
C
C
C
C
10
0
10
0
10
-1
25
C
10
-1
10
-2
10
-2
10
-3
0
0.5
V
1
0
10
20
V
30
V
F
V
R
Semiconductor Group
3
3
Sep-07-1998
1998-11-01
Semiconductor Group
BAT 64...W
Forward current
I
F
= f (T
A
*; T
S
)
*Package mounted on epoxy
BAT 64W
300
mA
T
S
200
T
A
150
100
50
0
0
20
40
60
80
100 120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
= f (t
p
)
Permissible Pulse Load
I
Fmax
/ I
FDC
= f (t
p
)
BAT 64W
BAT 64W
10
3
10
2
K/W
10
2
-
10
1
10
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
0
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
Semiconductor Group
4
4
Sep-07-1998
1998-11-01
Semiconductor Group
BAT 64...W
Forward current
I
F
= f (T
A
*; T
S
)
* Package mounted on epoxy
BAT 64-04/06W
300
mA
T
S
200
T
A
150
100
50
0
0
20
40
60
80
100 120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
= f (t
p
)
Permissible Pulse Load
I
Fmax
/ I
FDC
= f (t
p
)
BAT 64-04/06
BAT 64-04/06W
10
3
10
2
K/W
10
2
-
10
1
10
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
0
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
Semiconductor Group
5
5
Sep-07-1998
1998-11-01
Semiconductor Group
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