bfr193.pdf

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199617044 UNPDF
BFR 193
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• f T = 8GHz
F = 1.3dB at 900MHz
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 193
RCs
Q62702-F1218
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V CEO
12
V
Collector-emitter voltage
V CES
20
Collector-base voltage
V CBO
20
Emitter-base voltage
V EBO
2
Collector current
I C
80
mA
Base current
I B
10
Total power dissipation
T S
P tot
mW
69 °C
580
Junction temperature
T j
150
°C
Ambient temperature
T A
- 65 ... + 150
Storage temperature
T stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R thJS
£
140
K/W
1) T S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
£
199617044.014.png 199617044.015.png 199617044.016.png
 
BFR 193
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I C = 1 mA, I B = 0
V (BR)CEO
V
12
-
-
Collector-emitter cutoff current
V CE = 20 V, V BE = 0
I CES
µA
-
-
100
Collector-base cutoff current
V CB = 10 V, I E = 0
I CBO
nA
-
-
100
Emitter-base cutoff current
V EB = 1 V, I C = 0
I EBO
µA
-
-
1
DC current gain
I C = 30 mA, V CE = 8 V
h FE
-
50
100
200
Semiconductor Group
2
Dec-11-1996
199617044.001.png 199617044.002.png
BFR 193
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I C = 50 mA, V CE = 8 V, f = 500 MHz
f T
GHz
6
8
-
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb
pF
-
0.68
1
Collector-emitter capacitance
V CE = 10 V, f = 1 MHz
C ce
-
0.24
-
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb
-
1.8
-
Noise figure
I C = 10 mA, V CE = 8 V, Z S = Z Sopt
f = 900 MHz
f = 1.8 GHz
F
dB
-
1.3
-
-
2.1
-
Power gain 2)
I C = 30 mA, V CE = 8 V, Z S = Z Sopt
Z L = Z Lopt
f = 900 MHz
f = 1.8 GHz
G ma
-
14.5
-
-
9
-
Transducer gain
I C = 30 mA, V CE = 8 V, Z S =Z L = 50
|S 21e | 2
W
f = 900 MHz
f = 1.8 GHz
-
12.5
-
-
7
-
2) G ma = |S 21 /S 12 | (k-(k 2 -1) 1/2 )
Semiconductor Group
3
Dec-11-1996
199617044.003.png 199617044.004.png
BFR 193
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 0.2738 fA
VAF = 24 V
NE = 1.935 -
VAR = 3.8742 V
NC = 0.94371 -
RBM = 1.8368
BF =
125
-
NF =
0.95341 -
IKF =
0.26949 A
ISE =
10.627
fA
BR =
14.267
-
NR =
1.4289
-
IKR =
0.037925 A
ISC =
0.037409 fA
RB =
1
W
IRB =
0.91763 mA
W
RE =
0.76534
W
W
MJE = 0.48654 -
VTF = 0.8 V
CJC = 935.03 fF
XCJC = 0.053563 -
VJS =
0.11938
CJE =
1.1824
fF
VJE =
0.70276 V
TF =
18.828
ps
XTF =
0.69477 -
ITF =
0.96893 mA
PTF =
0
deg
VJC =
1.1828
V
MJC =
0.30002 -
TR =
1.0037
ns
CJS =
0
fF
0.75
V
MJS = 0
-
XTB = 0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.72063 -
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.85
nH
LBO = 0.51
nH
LEI =
0.69
nH
LEO = 0.61
nH
LCI =
0
nH
LCO = 0.43
nH
CBE = 73
fF
CCB = 84
fF
CCE = 165
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
RC =
199617044.005.png 199617044.006.png 199617044.007.png 199617044.008.png 199617044.009.png
BFR 193
Total power dissipation P tot = f (T A *, T S )
* Package mounted on epoxy
600
mW
500
P tot }
450
T S
400
350
300
250
T A
200
150
100
50
0
0
20
40
60
80 100 120 °C 150
T A ,T S
Permissible Pulse Load R thJS = f (t p )
Permissible Pulse Load P totmax /P totDC = f (t p )
10
3
10
3
K/W
-
P totmax /P totDC
R thJS
10
2
10
2
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
10
1
0.05
10
1
0.02
0.01
0.005
D = 0
10
0
10
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
s
s
t p
t p
Semiconductor Group
5
Dec-11-1996
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