blf147.pdf
(
90 KB
)
Pobierz
BLF147 VHF power MOS transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D060
BLF147
VHF power MOS transistor
Product specification
Supersedes data of 2001 May 23
2003 Sep 01
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
FEATURES
PINNING - SOT121B
·
High power gain
PIN
DESCRIPTION
·
Low intermodulation distortion
1
drain
·
Easy power control
2
source
·
Good thermal stability
3
gate
·
Withstands full load mismatch.
4
source
APPLICATIONS
·
Industrial and military applications in the HF/VHF
frequency range.
DESCRIPTION
handbook, halfpage
1
4
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(V
GS
) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
d
g
s
CAUTION
2
3
MAM267
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
h
D
(%)
d
3
(dB)
d
5
(dB)
SSB, class-AB
28
28
150 (PEP)
>
17
>
35
<-
30
<-
30
CW, class-B
108
28
150
typ. 14
typ. 70
-
-
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 01
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
±
20
V
I
D
drain current (DC)
-
25
A
P
tot
total power dissipation
T
mb
£
25
°
C
-
220
W
T
stg
storage temperature
-
65
150
°
C
T
j
junction temperature
-
200
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
0.8
K/W
R
th mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
10
2
MRA904
MGP049
300
handbook, halfpage
handbook, halfpage
I
D
(A)
P
tot
(W)
(1)
200
(1)
(2)
(2)
10
100
1
10
2
0
1
10
V
DS
(V)
0
50
100
150
T
h
(
°
C)
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
=25
°
C.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 01
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 100 mA; V
GS
=0
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
=28V
-
-
5
A
I
GSS
gate-source leakage current
V
GS
=
±
20 V; V
DS
=0
-
-
1
m
A
GSth
gate-source threshold voltage
I
D
= 200 mA; V
DS
=10V
2
-
4.5
V
D
V
GS
gate-source voltage difference of
matched pairs
I
D
= 100 mA; V
DS
=10V
-
-
100
mV
g
fs
forward transconductance
I
D
= 8 A; V
DS
=10V
5
7.5
-
S
R
DSon
drain-source on-state resistance I
D
= 8 A; V
GS
=10V
-
0.1
0.15
W
I
DSX
on-state drain current
V
GS
= 10 V; V
DS
=10V
-
37
-
A
C
is
input capacitance
V
GS
= 0; V
DS
=28V; f=1MHz
-
450
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
=28V; f=1MHz
-
360
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
=28V; f=1MHz
-
55
-
pF
V
GS
group indicator
GROUP
LIMITS
(V)
GROUP
LIMITS
(V)
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
O
3.3
3.4
B
2.1
2.2
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
2.3
2.4
R
3.6
3.7
E
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
2003 Sep 01
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP050
MGP051
0
60
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
I
D
(A)
-
1
40
-
2
-
3
20
-
4
-
5
0
10
-
2
10
-
1
1
10
0
5
10
15
V
GS
(V)
20
I
D
(A)
V
DS
= 28 V; valid for T
h
=25to70
°
C.
V
DS
=10V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
MGP052
MRA903
170
1400
handbook, halfpage
handbook, halfpage
R
DSon
(m
)
C
(pF)
150
1200
130
800
C
is
110
400
C
os
90
0
0
10
20
30
40
0
50
100
150
T
j
( C)
V
DS
(V)
I
D
= 8 A; V
GS
=10V.
V
GS
= 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
2003 Sep 01
5
W
Plik z chomika:
Chrupeki
Inne pliki z tego folderu:
zmm_xx(1).pdf
(594 KB)
z80(1).pdf
(927 KB)
y1112(1).pdf
(85 KB)
xr4151(1).pdf
(146 KB)
xr2206(1).pdf
(191 KB)
Inne foldery tego chomika:
eBooks
Elektronika dla wszystkich
Elektronika Praktyczna
książki informatyczne
Motocycles Manuals
Zgłoś jeśli
naruszono regulamin