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GaAs FET
CLY 2
Data Sheet
• Power amplifier for mobile phones
• For frequencies up to 3 GHz
• Operating voltage range: 2 to 6 V
•
P
OUT
at
V
D
= 3 V,
f
= 1.8 GHz typ. 23.5 dBm
• High efficiency better 55%
MW-6
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking Ordering Code
(taped)
Pin Configuration
Package
123456
CLY 2 Y2
Q62702-L96
G S
D D S
G MW 6
Maximum Ratings
Symbol
Value
Unit
Drain-source voltage
V
DS
9
V
Drain-gate voltage
V
DG
12
V
Gate-source voltage
V
GS
– 6
V
Drain current
I
D
600
mA
Channel temperature
T
Ch
150
°
C
Storage temperature
T
stg
– 55 … + 150
°
C
Total power dissipation (
T
S
£
50
°
C)
1)
1)
P
tot
900
mW
T
S
is measured on the source lead at the soldering point to the pcb.
Thermal Resistance
Symbol
Value
Unit
Channel-soldering point
1)
1)
R
thChS
£
110
K/W
T
S
is measured on the source lead at the soldering point to the pcb.
Data Book
1
03.00
CLY 2
Electrical Characteristics
T
A
= 25
°
C, unless otherwise specified.
Characteristics
Symbol
Limit Values
Unit Test Conditions
min. typ. max.
Drain-source
saturation current
I
DSS
300 450 650 mA
V
DS
= 3 V,
V
GS
= 0 V
Drain-source pinch-
off current
I
D(p)
–
5
50
m
A
V
DS
= 3 V,
V
GS
= – 3.8 V
Gate pinch-off current
I
G(p)
–
5
20
m
A
V
DS
= 3 V,
V
GS
= – 3.8 V
Pinch-off Voltage
V
GS(p)
– 3.8 – 2.8 – 1.8 V
V
DS
= 3 V,
I
D
= 50
m
A
Small Signal Gain
1)
G
–
15.5 –
dB
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= – 5 dBm
Small Signal Gain
2)
G
–
14.5 –
dB
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= – 5 dBm
Output Power
P
o
22.5 23.5 –
dBm
V
DS
= 3 V,
I
D
= 180 mA
f
= 1.8 GHz,
P
in
= 10 dBm
1 dB-Compression
Point
P
1 dB
–
23.5 –
dBm
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz
1 dB-Compression
Point
P
1 dB
–
27.0 –
dBm
V
DS
= 5 V,
I
D
= 180 mA,
f
= 1.8 GHz
Power Added
Efficiency
PAE
–
55
–
%
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= 10 dBm
Noise figure
NF
–
1.48 –
dB
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz
1)
Matching conditions for maximum small signal gain (not identical with power matching conditions!).
2)
Power matching conditions:
f
= 1.8 GHz; Source Match:
G
ms
: MAG = 0.74, ANG 132
°
; Load Match:
G
ml
: MAG
0.61, ANG – 153
°
.
Data Book
2
03.00
CLY 2
Compression Power vs. Drain-Source
Voltage
,
f
= 1.8 GHz;
I
DS
= 0.5
´
I
DSS
Output Characteristics
40
EHT08943
80
0.5
EHT08942
P
1d
B
dBm
%
h
D
I
A
P
tot DC
0.45
D
35
70
h
D
0.4
V
= 0 V
30
60
0.35
25
50
0.3
-0.5 V
P
1dB
20
40
0.25
-1 V
0.2
15
30
0.15
10
20
-1.5 V
-2 V
0.1
5
10
0.05
-2.5 V
0
0
1
2
3
4
5
V
6
0
0
0
1 2
345
67
V
V
V
DS
Data Book
3
03.00
GS
DS
CLY 2
Typ. Common Source S-Parameters and Noise Data
V
DS
= 3 V,
I
D
= 180 mA,
Z
o
= 50
W
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.99
– 12.0 9.17
171.6
0.007
83.3
0.15
– 16.6
0.150
0.99
– 17.9 9.11
167.4
0.011
80.8
0.16
– 24.2
0.200
0.98
– 23.7 9.01
163.4
0.014
77.6
0.16
– 31.2
0.250
0.97
– 29.5 8.89
159.3
0.017
74.7
0.16
– 39.0
0.300
0.96
– 35.1 8.75
155.4
0.021
72.4
0.16
– 45.9
0.400
0.94
– 46.0 8.40
147.8
0.026
67.0
0.17
– 58.2
0.500
0.92
– 56.4 8.03
140.7
0.031
62.5
0.18
– 69.2
0.600
0.89
– 66.2 7.61
134.1
0.036
58.0
0.18
– 79.0
0.700
0.86
– 75.4 7.22
128.0
0.039
54.4
0.19
– 87.0
0.800
0.84
– 84.1 6.82
122.3
0.043
51.2
0.20
– 94.2
0.900
0.82
– 92.1 6.45
117.2
0.045
48.3
0.20
– 100.4
1.000
0.80
– 99.7 6.10
112.3
0.048
46.1
0.21
– 105.3
1.200
0.77
– 113.6 5.45
103.6
0.052
41.8
0.22
– 115.1
1.400
0.74
– 125.9 4.92
95.8
0.055
38.6
0.23
– 122.9
1.500
0.73
– 131.5 4.71
92.1
0.056
37.2
0.23
– 125.7
1.600
0.72
– 137.1 4.48
88.5
0.057
36.2
0.24
– 129.4
1.800
0.72
– 147.4 4.10
81.7
0.059
34.0
0.25
– 135.0
2.000
0.71
– 157.2 3.77
75.0
0.060
31.9
0.26
– 139.7
2.200
0.71
– 165.3 3.47
68.8
0.062
31.2
0.27
– 143.0
2.400
0.71
– 173.3 3.19
63.0
0.063
29.7
0.29
– 147.2
2.500
0.71
– 177.4 3.06
60.1
0.063
28.9
0.29
– 150.0
3.000
0.72
165.7
2.52
47.2
0.065
28.4
0.32
– 159.7
3.500
0.74
151.7
2.12
36.4
0.066
29.7
0.36
– 167.5
4.000
0.76
139.9
1.85
26.5
0.073
30.6
0.39
– 173.1
4.500
0.78
127.4
1.61
15.3
0.078
28.2
0.42
179.2
5.000
0.79
116.7
1.43
4.6
0.085
24.0
0.45
174.3
Data Book
4
03.00
CLY 2
Typ. Common Source S-Parameters and Noise Data
(cont’d)
V
DS
= 3 V,
I
D
= 180 mA,
Z
o
= 50
W
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5.500
0.80
106.3
1.23
– 5.9
0.085
20.9
0.49
167.8
6.000
0.83
97.1
1.06
– 14.8 0.087
17.7
0.52
160.9
f
F
min
G
opt
R
n
r
n
GHz
dB
MAG
ANG
W
–
0.9
0.79
0.564
61
13.4
0.267
1.8
1.47
0.585
99
13.6
0.272
Additional S-Parameter and noise data available on data disc!
Data Book
5
03.00
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