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DIAC
®
DB3 DB4 SMDB3
DIAC
FEATURES
n
V
BO
: 32V and 40V
n
LOW BREAKOVER CURRENT
DESCRIPTION
DO-35
(DB3 and DB4)
Functioning as a trigger diode with a fixed voltage
reference, the DB3/DB4 series can be used in
conjunction with triacs for simplified gate control
circuits or as a starting element in fluorenscent
lamp ballasts.
A new surface mount version is now available in
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment.
2
3
1
SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
TRM
Repetitive peak on-state current
tp=20
SMDB3
1.00
A
m
F= 120 Hz
DB3 / DB4
2.00
Tstg
Tj
Storage temperature range
Operating junction temperature range
-40to+125
C
Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.
October 2001 - Ed: 2B
1/5
s
°
DB3 DB4 SMDB3
ELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
SMDB3 DB3 DB4 Unit
V
BO
Breakover voltage *
C = 22nF **
MIN.
28
28
35
V
TYP.
32
32
40
MAX.
36
36
45
IV
BO1
-V
BO2
I Breakover voltage
symmetry
C = 22nF **
MAX.
3
V
D
V
Dynamic breakover
voltage *
V
BO
and V
F
at 10mA MIN.
10
5
V
V
O
Output voltage *
see diagram 2
(R=20
MIN.
10
5
V
W
)
I
BO
Breakover current *
C = 22nF **
MAX.
10
50
m
A
tr
Rise time *
see diagram 3
MAX.
0.50
2
m
s
I
R
Leakage current *
V
R
= 0.5 V
BO
max
MAX.
1
10
m
A
I
P
Peak current *
see diagram 2 (Gate) MIN.
1
0.30
A
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
PRODUCT SELECTOR
Part Number
V
BO
Package
SMDB3
28 - 36
SOT-23
DB3
28 - 36
DO-35
DB4
35 - 45
DO-35
ORDERING INFORMATION
SM DB 3
Surface
Mount
Version
Breakover voltage
3: V typ = 32V
4: V typ = 40V
BO
BO
Diac Series
2/5
DB3 DB4 SMDB3
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing Mode
SMDB3
DB3
0.01 g
3000
Tape & Reel
DB3
DB3 (Blue Body Coat)
0.15 g
5000
Tape & Reel
DB4
DB4 (Blue Body Coat)
0.15 g
5000
Tape & Reel
Diagram 1:
Voltage - current characteristic curve.
Diagram 2:
Test circuit.
10 k
W
500 k
W
D.U.T
Rs=0
+I
F
220 V
50 Hz
C=0.1µF
I
P
Vo
10mA
T410
R=20
W
-V
I
BO
I
B
+ V
Diagram 3:
Rise time measurement.
0,5 V
BO
V
l
p
90 %
V
F
V
BO
-I
F
10 %
t
r
3/5
DB3 DB4 SMDB3
Fig. 1:
Relative variation of VBO versus junction
temperature (typical values).
Fig. 2:
Repetitive peak pulse current versus pulse
duration (maximum values).
VBO [Tj] / VBO [Tj=25°C]
ITRM(A)
1.10
20.0
F=120Hz
Tj initial=25°C
DB3/DB4
10.0
1.05
DB3/DB4
1.00
0.95
SMDB3
1.0
SMDB3
0.90
0.85
Tj(°C)
tp(µs)
0.80
0.1
25
50
75
100
125
1
10
100
Fig. 3:
Time duration while current pulse is higher
50mA versus C and Rs (typical values).
tp(µs)
40
Tj=25°C
68
W
35
30
47
W
25
33
W
20
15
10
22
W
10
W
5
0
W
C(nF)
0
10
20
50
100
200
500
PACKAGE MECHANICAL DATA
(in millimeters)
DO-35
REF.
DIMENSIONS
C
A
C
/
B
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
B
1.53
2.00
0.060
0.079
/
D
/
D
C
28.00
1.102
D
0.458
0.558
0.018
0.022
4/5
DB3 DB4 SMDB3
PACKAGE MECHANICAL DATA
(in millimeters)
SOT-23
E
A
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
e
A
0.89
1.4
0.035
0.055
e1
D
B
A1
0
0.1
0
0.004
B
0.3
0.51
0.012
0.02
S
c
0.085
0.18
0.003
0.007
A1
D
2.75
3.04
0.108
0.12
e
0.85
1.05
0.033
0.041
L
e1
1.7
2.1
0.067
0.083
H
E
1.2
1.6
0.047
0.063
H
2.1
2.75
0.083
0.108
L
0.6 typ.
0.024 typ.
c
S
0.35
0.65
0.014
0.026
FOOTPRINT
0.9
0.035
0.9
0.035
1.9
0.075
1.45
0.037
mm
inch
0.9
0.035
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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