blf378(1).pdf

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF378

VHF push-pull power MOS

transistor

Product specication

Supersedes data of October 1992

File under Discrete Semiconductors, SC08a

1996 Oct 17

Philips Semiconductors

Product specication

VHF push-pull power MOS transistor

BLF378

FEATURES

PINNING - SOT262A1

High power gain

SYMBOL

DESCRIPTION

d 1

drain 1

Easy power control

d 2

drain 2

Good thermal stability

g 1

gate 1

Gold metallization ensures excellent reliability.

g 2

gate 2

APPLICATIONS

source

Broadcast transmitter applications in the VHF frequency

range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode

vertical D-MOS transistor encapsulated in a 4-lead,

SOT262A1 balanced flange package with two ceramic

caps. The mounting flange provides the common source

connection for the transistors.

Top view

MAM098

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at T h = 25

C in a push-pull common source test circuit.

MODE OF OPERATION

(MHz)

V DS

(V)

P L

(W)

G p

(dB)

G p

(dB) (1)

h D

(%)

CW, class-AB

225

250

>14; typ. 16

<1; typ. 0.6

>50; typ. 55

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized

input / 25% synchronized output compression in television service (negative modulation, CCIR system).

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1996 Oct 17

Philips Semiconductors

Product specication

VHF push-pull power MOS transistor

BLF378

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section

V DSS

drain-source voltage

110

V GSS

gate-source voltage

I D

DC drain current

P tot

total power dissipation

up to T mb = 25 ° C total device;

both sections equally loaded

500

T stg

storage temperature

150

T j

junction temperature

200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-mb

thermal resistance from junction

to mounting base

total device; both sections

equally loaded

0.35

K/W

R th mb-h

thermal resistance from

mounting base to heatsink

total device; both sections

equally loaded

0.15

K/W

MRA988

MGE616

100

500

handbook, halfpage

P tot

(W)

I D

(A)

400

(2)

(1)

(2)

300

200

100

500

120

160

V (V)

T h (

Total device; both sections equally loaded.

(1) Current is this area may be limited by R DSon .

(2) T mb = 25

Total device; both sections equally loaded.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Fig.2 DC SOAR.

Fig.3 Power derating curves.

1996 Oct 17

Philips Semiconductors

Product specication

VHF push-pull power MOS transistor

BLF378

CHARACTERISTICS

T j = 25 ° C; unless otherwise specied.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Per transistor section

V (BR)DSS

drain-source breakdown voltage V GS = 0; I D = 50 mA

110

I DSS

drain-source leakage current

V GS = 0; V DS = 50 V

2.5

I GSS

gate-source leakage current

V GS =

20 V; V DS = 0

V GSth

gate-source threshold voltage

I D = 50 mA; V DS = 10 V

2.0

4.5

V GS

gate-source voltage difference

of both transistor sections

I D = 50 mA; V DS = 10 V

100

g fs

forward transconductance

I D = 5 A; V DS = 10 V

4.5

6.2

g fs1 /g fs2

forward transconductance ratio

of both transistor sections

I D = 5 A; V DS = 10 V

0.9

1.1

R DSon

drain-source on-state resistance I D = 5 A; V GS = 10 V

0.2

0.3

I DSX

on-state drain current

V GS = 10 V; V DS = 10 V

C is

input capacitance

V GS = 0; V DS = 50 V; f = 1 MHz

480

C os

output capacitance

V GS = 0; V DS = 50 V; f = 1 MHz

190

C rs

feedback capacitance

V GS = 0; V DS = 50 V; f = 1 MHz

C d-f

drain-ange capacitance

5.4

MGE623

MGE622

handbook, halfpage

T.C.

(mV/K)

I D

(A)

- 2

- 3

- 4

- 5

10 - 2

10 - 1

I D (A)

V GS (V)

V DS = 10 V.

V DS = 10 V; T j = 25

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current; typical

values per section.

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

1996 Oct 17

Philips Semiconductors

Product specication

VHF push-pull power MOS transistor

BLF378

MGE621

MGE615

400

1200

handbook, halfpage

R DSon

(m W )

(pF)

300

800

200

C is

400

100

C os

100

150

T j (

V DS (V)

I D = 5 A; V GS = 10 V.

V GS = 0; f = 1 MHz.

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical

values per section.

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per

section.

MGE620

400

handbook, halfpage

C rs

(pF)

300

200

100

V DS (V)

V GS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per

section.

1996 Oct 17

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