EMIF02-MIC03F1.pdf

EMIF02-MIC03F1

IPAD TM

2 LINES EMI FILTER

AND ESD PROTECTION

MAIN PRODUCT CHARACTERISTICS:

Where EMI filtering in ESD sensitive equipment is

required :

■ Mobile phones and communication systems

■ Computers, printers and MCU Boards

DESCRIPTION

The EMIF02-MIC03 is a highly integrated device designed

to suppress EMI/RFI noise in all systems subjected to

electromagnetic interferences. The EMIF02 flip chip

packaging means the package size is equal to the die

size.

This filter includes an ESD protection circuitry which

prevents the device from destruction when subjected to

ESD surges up 15kV.

Flip Chip package

BENEFITS

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Very low PCB space consuming: 1.07mm x 1.47mm

■ Very thin package: 0.65 mm

■ High efficiency in ESD suppression

■ High reliability offered by monolithic integration

■ High reducing of parasitic elements through integration

& wafer level packaging.

PIN CONFIGURATION (ball side)

GND

COMPLIES WITH THE FOLLOWING STANDARDS:

IEC61000-4-2

Level 4 on input pins 15kV (air discharge)

8 kV (contact discharge)

Level 1 on output pins 2kV (air discharge)

2kV (contact discharge)

MIL STD 883E - Method 3015-6 Class 3

BASIC CELL CONFIGURATION

Low-pass Filter

Input

Output

Ri/o = 68

Cline = 100pF

Ω

GND

TM : IPAD is a trademark of STMicroelectronics.

January 2004 - Ed: 3A

1/6

EMIF02-MIC03F1

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter and test conditions

Value

Unit

T j

Maximum junction temperature

125

°C

T op

Operating temperature range

-40 to + 85

°C

T stg

Storage temperature range

-55 to 150

°C

ELECTRICAL CHARACTERISTICS (T amb = 25 °C)

Symbol

Parameter

V BR

Breakdown voltage

I PP

I RM

Leakage current @ V RM

V RM

Stand-off voltage

I R

I RM

V CL

Clamping voltage

V CL

V BR

V RM

I RM

I R

V RM

V BR

V CL

R d

Dynamic impedance

I PP

Peak pulse current

R I/O

Series resistance between Input & Output

I PP

C line

Input capacitance per line

Symbol

Test conditions

Min.

Typ.

Max.

Unit

V BR

I R =1mA

I RM

V RM = 3V per line

500

R I/O

Tolerance ± 20%

Ω

C line

V R =0V

100

Fig. 1: S21(dB) attenuation measurement and

Aplac simulation.

Fig. 2: Analog crosstalk measurements.

0.00

-5.00

-10.00

-20.00

-15.00

-20.00

-30.00

-25.00

-40.00

-30.00

-50.00

-35.00

-40.00

-60.00

-45.00

-70.00

-50.00

-80.00

100.0k

1.0M

10.0M

100.0M

1.0G

100.0k

1.0M

10.0M

100.0M

1.0G

f/Hz

2/6

0.00

-10.00

-5.00

-10.00

-20.00

-15.00

-30.00

-20.00

-25.00

-40.00

-30.00

-50.00

-35.00

-60.00

-40.00

-45.00

-70.00

-50.00

-80.00

100.0k

1.0M

10.0M

100.0M

1.0G

100.0k

1.0M

10.0M

100.0M

1.0G

f/Hz

EMIF02-MIC03F1

Fig. 3: ESD response to IEC61000-4-2 (+15kV air

discharge) on one input V(in) and on one output

(Vout).

Fig. 4: ESD response to IEC61000-4-2 (-15kV air

discharge) on one input V(in) and on one output

(Vout).

Fig. 5: Line capacitance versus applied voltage.

C(pF)

140

120

F=1MHz

V osc =30mV RMS

T j =25°C

100

V(V)

3/6

EMIF02-MIC03F1

Aplac model.

IN1

Rbump Lbump

Rmic

Lmic

Lbump Rbump

GND

OUT1

Lsub

model = D1

model = D2

Rsub

GND

Rbump

model = D3

Lbump

model = D1

model = D2

Lgnd

Cgnd

IN2

OUT2

Rgnd

Rbump Lbump

Rmic

Lmic

Lbump Rbump

EMIF02-MIC03F1 model

Ground return

Aplac parameters .

Model D1

CJO=Cdiode1

BV=7

IBV=1u

IKF=1000

IS=10f

ISR=100p

N=1

M=0.3333

RS=0.7

VJ=0.6

TT=50n

Model D3

CJO=Cdiode3

BV=7

IBV=1u

IKF=1000

IS=10f

ISR=100p

N=1

M=0.3333

RS=0.12

VJ=0.6

TT=50n

Model D2

CJO=Cdiode2

BV=7

IBV=1u

IKF=1000

IS=10f

ISR=100p

N=1

M=0.3333

RS=0.3

VJ=0.6

TT=50n

aplacvar Rmic 68

aplacvar Lmic 10p

aplacvar Cdiode1 100pF

aplacvar Cdiode2 3.6pF

aplacvar Cdiode3 1.17nF

aplacvar Lbump 50pH

aplacvar Rbump 20m

aplacvar Rsub 0.5m

aplacvar Rgnd 10m

aplacvar Lgnd 50pH

aplacvar Cgnd 0.15pF

aplacvar Lsub 10pH

ORDER CODE

EMIF yy

- xxx zz

F x

1: Pitch = 500µm

Bump = 315µm

2: Leadfree Pitch = 500µm

Bump = 315µm

EMI Filter

Number of lines

Flip Chip

x: resistance value (Ohms) z: capacitance value / 10(pF)

Application (3 letters) and Version (2 digits)

4/6

EMIF02-MIC03F1

PACKAGE MECHANICAL DATA

FLIP CHIP

5 00µm ± 10

2 50µm ± 10

315µm ± 50

650µm ± 50

1.07mm ± 50µm

FOOT PRINT RECOMMENDATIONS

Copper pad Diameter :

250µm recommended , 300µm max

Solder stencil opening : 330µm

Solder mask opening recommendation :

340µm min for 300µm copper pad diameter

MARKING

Dot, ST logo

xxx = marking

yww = datecode

(y = year

ww = week)

3 6 5

240

All dimensions in µm

5/6

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