BUZ10.pdf

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103946627 UNPDF
[
BUZ10
N - CHANNEL 50V - 0.06
W
- 23A -TO-220
STripFET
]
POWER MOSFET
TYPE
V DSS
R DS(on)
I D
BUZ10
50 V
< 0.07
W
23 A
n
TYPICAL R DS(on) = 0.06
W
AVALANCHE RUGGED TECHNOLOGY
n
100% AVALANCHE TESTED
n
HIGH CURRENT CAPABILITY
n
175 o C OPERATING TEMPERATURE
n
3
2
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220
SOLENOID AND RELAY DRIVERS
n
REGULATORS
n
DC-DC & DC-AC CONVERTERS
n
MOTOR CONTROL, AUDIO AMPLIFIERS
n
n
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS =0)
50
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
50
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c =25 o C
23
A
I DM
Drain Current (pulsed)
92
A
P tot
Total Dissipation at T c =25 o C
75
W
T stg
Storage Temperature
-65 to 175
o C
T j
Max. Operating Junction Temperature
175
o C
DIN HUMIDITY CATEGORY (DIN 40040)
E
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
September 1998
1/6
103946627.002.png
BUZ10
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Max
2.0
62.5
o C/W
o C/W
Thermal Resistance Junction-ambient
Max
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
23
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =30V)
70
mJ
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
AV GS =0
50
V
I DSS
Zero G ate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS = Max Rating
1
10
m
A
T j =125 o C
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold
Voltage
V DS =V GS I D =1mA
2.1
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D = 14 A
0.06
0.07
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs ( * )
rrd
Transconductance
V DS =25V I D =14A
6
11
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS =0
900
130
40
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD =30V
I D =10A
20
45
48
10
ns
ns
ns
ns
R GS =4.7
W
V GS =10V
2/6
m
103946627.003.png
BUZ10
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM
Source-drain Current
Source-drain Current
(pulsed)
23
92
A
A
V SD (
*
) Forward On Voltage
I SD =46A V GS =0
1.9
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 23 A di/dt = 100 A/
m
s
50
ns
V DD =30V T j =150 o C
Q rr
0.17
C
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
3/6
m
103946627.004.png
BUZ10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
103946627.005.png
BUZ10
TO-220 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L2
Dia.
L5
L9
L7
L6
L4
P011C
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