2n6849.pdf

PD - 90550D

IRFF9130

JANTX2N6849

REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849

HEXFET

TRANSISTORS

JANS2N6849

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/564

100V, P-CHANNEL

Product Summary

Part Number BVDSS R DS(on) I D

IRFF9130 -100V 0.30

-6.5A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

TO-39

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

Units

I D @ V GS = -10V, T C = 25°C Continuous Drain Current

-6.5

I D @ V GS = -10V, T C = 100°C Continuous Drain Current

-4.1

I DM

Pulsed Drain Current ➀

-25

P D @ T C = 25°C

Max. Power Dissipation

Linear Derating Factor

0.20

W/°C

V GS

Gate-to-Source Voltage

±20

E AS

Single Pulse Avalanche Energy ➁

I AR

Avalanche Current ➀

—

E AR

Repetitive Avalanche Energy ➀

—

dv/dt

Peak Diode Recovery dv/dt ➂

-5.5

V/ns

T J

Operating Junction

-55 to 150

T STG

Storage Temperature Range

Lead Temperature

o C

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

For footnotes refer to the last page

www.irf.com

04/20/01

Features:

IRFF9130

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV DSS

Drain-to-Source Breakdown Voltage

-100

—

V GS = 0V, I D = -1.0mA

BV DSS / ∆ T J Temperature Coefficient of Breakdown

—

-0.10 —

V/°C Reference to 25°C, I D = -1.0mA

Voltage

R DS(on)

Static Drain-to-Source On-State

—

— 0.30 V GS = -10V, I D = -4.1A

Resistance

—

— 0.345

V GS =-10V, I D =-6.5A

V GS(th)

Gate Threshold Voltage

-2.0

—

-4.0 V V DS = V GS , I D = -250

g fs

Forward Transconductance

2.5

—

S (

)

DS > -15V, I DS = -4.1A

I DSS

Zero Gate Voltage Drain Current

—

-25

V DS = -80V, V GS =0V

—

— -250

µA

V DS = -80V

V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Leakage Forward

—

— -100

V GS = -20V

I GSS

Gate-to-Source Leakage Reverse

—

100

n A

V GS = 20V

Q g

Total Gate Charge

14.7

— 34.8

V GS =-10V, ID = -6.5A

Q gs

Gate-to-Source Charge

1.0

—

7.1

V DS = -50V

Q gd

Gate-to-Drain (‘Miller’) Charge

2.0

—

t d(on)

Turn-On Delay Time

—

V DD = -50V, I D = -6.5A,

t r

Rise Time

—

140

V GS =-10V,R G =7.5

t d(off)

Turn-Off Delay Time

—

140

t f

Fall Time

—

140

L S + L D

Total Inductance

—

7.0

—

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

C iss

Input Capacitance

—

800

V GS = 0V, V DS = -25V

C oss

Output Capacitance

—

350

—

f = 1.0MHz

C rss

Reverse Transfer Capacitance

—

125

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I S

Continuous Source Current (Body Diode)

—

-6.5

I SM Pulse Source Current (Body Diode) ➀

—

-25

V SD Diode Forward Voltage

—

-4.7

V T j = 25°C, I S =-6.5A, V GS = 0V ➃

t rr

Reverse Recovery Time

—

250

Tj = 25°C, I F = -6.5A, di/dt ≤

-100A/ µ

Q RR Reverse Recovery Charge

—

3.0

µC

V DD ≤

-50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R thJC

Junction-to-Case

— — 5.0

°C/W

R thJA

Junction-to-Ambient

— —

175 Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFF9130

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRFF9130

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRFF9130

V DS

R D

V GS

D.U.T.

R G

V DD

V GS

Pulse Width

µs

Duty Factor

Fig 10a. Switching Time Test Circuit

t d (on ) tr

t d (of f) tf

V GS

10%

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

V DS

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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