2N5339.PDF

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SILICON NPN TRANSISTOR
2N5339
SILICON NPN TRANSISTOR
n
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
n
DESCRIPTION
The 2N5339 is a silicon epitaxial planar NPN
transistor in Jedec TO-39 metal case. It is
intended for high switching applications up to 5A.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
100
V
V EBO
Emitter-Base Voltage (I C = 0)
6
V
I C
Collector Current
5
A
I CM
Collector Peak Current
7
A
I B
Base Current
1
A
P tot
Total Dissipation at T c
£
25 o C
6
W
P tot
Total Dissipation at T amb
£
25 o C
1
W
T stg
Storage Temperature
-65 to 200
o C
T j
Max. Operating Junction Temperature
200
o C
June 1997
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2N5339
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
29.2
175
o C/W
o C/W
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 100 V
10
m
A
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 90 V
100
m
A
I CEX
Collector Cut-off
Current (V BE = -1.5V)
V CE = 90 V
V CE = 90 V T C = 150 o C
10
1
A
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = -6 V
100
m
A
V CEO(sus)
*
Collector-Emitter
Sustaining Voltage
I C = 50 mA
100
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
I C = 2 A I B = 200 mA
I C = 5 A I B = 500 mA
0.7
1.2
V
V
V BE(sat)
*
Base-Emitter
Saturation Voltage
I C = 2 A I B = 200 mA
I C = 5 A I B = 500 mA
1.2
1.8
V
V
h FE
*
DC Current Gain
I C = 0.5 A V CE = 2 V
I C = 2 A V CE = 2 V
I C = 5 A V CE = 2 V
60
60
40
240
f T
Transition Frequency
I C = 0.5 A V CE = 10 V
30
MHz
C CBO
Collector-Base
Capacitance
I E = 0 V CB = 10 V f = 0.1 MHz
250
pF
t on
Turn on Time
I C = 2 A V CC = 40 V I B1 = 0.2 A
200
ns
t s
Storage Time
I C = 2 A V CC = 40 V
I B1 = -I B2 = 0.2A
2
m
s
t f
Fall Time
200
ns
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
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m
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2N5339
TO-39 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45 o (typ.)
G
D
A
I
H
L
P008B
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2N5339
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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