2n4402.pdf

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2N4402 PNP General Purpose Amplifier
2N4402
C B E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V CEO
Collector-Emitter Voltage
40
V
V CBO
Collector- Bas e Voltage
40
V
V EBO
Emitter-Base Voltage
5.0
V
I C
Collector Current - Continuous
600
mA
T J , T stg
Oper ating and Storage J unction Temperature Range
-55 to +150
°
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4402
P D
Total Device Dissipation
Derate above 25 ° C
625
5.0
mW
mW/ ° C
R q JC
Thermal Resistanc e, J unction to Case
83.3
° C/W
R q JA
Thermal Resistanc e, J unction to Ambient
200
° C/W
ã 2001 Fairchild Semiconductor Corporation
2N4402, Rev A
23103651.007.png 23103651.008.png 23103651.009.png 23103651.010.png
PNP General Purpose Amplifier
(continued)
Electri cal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
Collector -Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0
40
V
V (BR)CBO
Collector -Base Breakdown Voltage
I C = 100 m A, I E = 0
40
V
V (BR) EBO
Emitter-Base Breakdown Voltage
I E = 100 m A, I C = 0
5.0
V
I CEX
Collector Cutoff Current
V CE = 35 V, V EB = 0.4 V
0.1
m A
I BL
Base Cutoff Current
V CE = 35 V, V EB = 0.4 V
0.1
m
A
ON CHAR ACTERISTICS*
h FE
DC Current Gain
V CE = 1.0 V, I C = 1.0 mA
V CE = 1.0 V, I C = 10 mA
V CE = 2.0 V, I C = 150 mA
V CE = 2.0 V, I C = 500 mA
30
50
50
20
150
V CE( sat )
Collector-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
0.40
0.75
V
V
V BE( sat )
Base-Emitter Satur ation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
0.75
0.95
1.30
V
V
SMALL SIGNAL CHARACTERISTICS
C ob
Output Capacitance
V CB = 10 V, f = 140 kHz
8.5
pF
C ib
Input Capacitance
V EB = 0.5 V, f = 140 kHz
30
pF
h fe
Small- Signal Curr ent Gain
I C = 20 mA, V CE = 10 V,
f = 100 MHz
1.5
h fe
Small- Signal Curr ent Gain
I C = 1.0 mA, V CE = 10 V,
30
250
h ie
Input Impedance
f = 1.0 kHz
0.75
7.5
k W
h re
Voltage Feedback Ratio
0.10
8.0
x10 -4
h oe
Output Admittance
1.0
100
m mhos
SWITCHING CHARACTERISTICS
t d
Delay Time
V CC = 30 V, I C =150 mA,
15
ns
t r
Rise Time
I B1 = 15 mA, V BE ( off ) = 2.0 V
20
ns
t s
Storage Time
V CC = 30 V, I C =150 mA,
225
ns
t f
Fall Time
I B1 = I B2 = 15 mA
30
ns
* Pulse Test: Pulse Width £ 300 m s, Duty Cycle £ 2.0%
23103651.001.png 23103651.002.png 23103651.003.png
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitt er Saturation
Voltage vs Collect or Curre nt
500
0. 5
V = 5V
CE
= 10
400
125 °C
0. 4
300
0. 3
25 °C
200
25 °C
0. 2
100
- 40 °C
0. 1
125 ° C
- 40 ° C
0
0.1
0.3
1
3
10
30
100 300
0
1
10
100
500
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRE NT (mA)
C
C
Base-Emitt er Saturation
Voltage vs Collect or Curre nt
Bas e E mitter O N Voltage vs
Collect or Curre nt
1
1
- 40 °C
0. 8
- 40 ° C
0. 8
25 °C
0. 6
0. 6
25 °C
125 °C
0. 4
0. 4
= 10
125°C
0. 2
0. 2
V = 5V
CE
0
0
1
10
100
500
0.1
1
10
25
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
Collect or-Cutoff Current
vs Ambie nt Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
10 0
20
V = 35V
CB
16
10
12
1
C
ib
8
0. 1
4
C ob
0.01
25
50
75
100
125
0
0.1
1
10
50
T - A MBI E NT T EMP ER AT UR E ( C)
°
REVERSE BIAS VOLTAGE (V)
A
C
23103651.004.png
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
250
500
I c
10
I c
10
I = I =
B2
I = I =
B2
200
400
V = 15 V
cc
V = 15 V
cc
150
t
s
300
100
200
t r
t f
t
off
50
100
t on
t d
0
10
100
1000
0
10
100
1000
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
C
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
50
1
20
0.75
SOT-223
TO-92
10
t = 15 V
r
0.5
5
SOT-23
30 ns
0.25
2
60 ns
1
0
10
100
500
0
25
50
75
100
125
150
I - COLLECTOR CURRENT (mA)
C
TEMPERATURE ( C)
o
B1
B1
23103651.005.png
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitter Characteristics
Common Emitter Characteristics
5
1.3
h oe
h re
h ie
2
h re
h fe
1.2
h and h
re
oe
h fe
h oe
1
1.1
0.5
h ie
1
h ie
0.2
V = -10 V
CE
0.9
I = -10mA
C
T = 25 C
A
o
h fe
T = 25 C
A
o
0.1
1
_
2
_
5
_
10
_
20
_
50
0.8
-4
-8
-12
-16
-20
I - COLLECTOR CURRENT (mA)
V - COLLECTOR VOLTAGE (V)
C
CE
Common Emitter Characteristics
1.5
I = -10mA
C
h fe
h ie
h re
h oe
1.4
V = -10 V
CE
1.3
1.2
1.1
h oe
1
0.9
h re
0.8
h ie
0.7
0.6
h fe
0.5
-40
-20
0
20
40
60
80
100
T - AMBIENT TEMPERATURE ( C)
A
o
_
23103651.006.png

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