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QUAD TRUE/COMPLEMENT BUFFER
HCC/HCF4041UB
QUAD TRUE/COMPLEMENT BUFFER
.
BALANCED SINK AND SOURCE CURRENT ;
APPROXIMATELY 4 TIMES STANDARD ”B”
DRIVE
.
QUIESCENT CURRENT SPECIFIED TO 20V
.
5V, 10V AND 15V PARAMETRIC RATINGS
.
INPUT CURRENT OF 100nA AT 18V AND 25
°
C
FOR HCC DEVICE
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
.
100 % TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4041BF
HCF4041BM1
HCF4041BEY
HCF4041BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4041UB
(extended temperature range)
and
HCF4041UB
(intermediate temperature range)
are monolithic integrated circuits, available in 14-
lead dual in-line plastic or ceramic package and
plastic micro package.
The
HCC/HCF4041UB
types are quad true/comple-
ment buffers consisting of n- and p-channel units
having low channel resistance and high current
(sourcing and sinking) capability. The
HCC/-
HCF4041UB
is intended for use as a buffer, line
driver, or COS/MOS-to-TTL driver. It can be used as
an ultra-low power resistor-network driver for A/D
and D/A conversion, as a transmission-line driver,
and in other applications where high noise immunity
and low-power dissipation are primary design re-
quirements.
June 1989
1/12
.
EQUALIZED DELAY TO TRUE AND COMPLE-
MENT OUTPUTS
FOR HCC DEVICE
HCC/HCF4041UB
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage :
HCC
Types
HCF
Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V
i
Input Voltage
– 0.5 to V
DD
+ 0.5
V
I
I
DC Input Current (any one input)
±
10
mA
P
tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= Full Package-temperature Range
200
mW
100
mW
T
op
Operating Temperature :
HCC
Types
HCF
Types
– 55 to + 125
–40to+85
C
°
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
Storage Temperature
– 65 to + 150
°
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage :
HCC
Types
HCF
Types
3to+18
3to+15
V
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature :
HCC
Types
HCF
Types
– 55 to + 125
–40to+85
C
°
C
2/12
°
T
stg
°
HCC/HCF4041UB
SCHEMATIC DIAGRAM
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V
I
V
O
|I
O
|V
DD
T
Low
*
25
C
T
Hi g h
*
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I
L
Quiescent
Current
0/ 5
5
1
0.02
1
30
HCC
Types
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04 20
600
m
A
0/ 5
5
4
0.02
4
30
HCF
Types
0/10
10
8
0.02
8
60
0/15
15
16
0.02 16
120
V
OH
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V
OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
V
IH
Input High
Voltage
0.5/4.5 < 1
5
4
4
4
1/9
< 1 10
8
8
8
V
1.5/13.5 < 1 15 12.5
12.5
12.5
*T
Lo w
=–55
Cfor
HCC
device : – 40
°
Cfor
HCF
device.
Cfor
HCF
device.
The Noise Margin for both ”1” and ” 0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
°
Cfor
HCC
device : + 85
°
3/12
°
°
*T
High
= + 125
HCC/HCF4041UB
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Value
Symbol
Parameter
V
I
V
O
|I
O
|V
DD
T
Low
*
25
°
C
T
Hi g h
*
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
V
IL
Input Low
Voltage
4.5/0.5 < 1
5
1
1
1
9/1
< 1 10
2
2
2
V
13.5/1.5 < 1 15
2.5
2.5
2.5
I
OH
Output
Drive
Current
0/ 5
2.5
5 – 8.4
– 6.4 – 12.8
– 4.6
HCC
Types
0/ 5
4.6
5 – 2.1
– 1.6 – 3.2
– 1.2
0/10
9.5
10 – 6.25
– 5 – 10
– 3.5
0/15 13.5
15 – 24
– 19 – 38
– 13
mA
0/ 5
2.5
5 – 6.8
– 5.44 – 12.8
– 4.08
HCF
Types
0/ 5
4.6
5 – 1.7
– 1.36 – 3.2
– 1.02
0/10
9.5
10 – 5.31
– 4.25 – 10
– 3.18
0/15 13.5
15 –20.18
–16.15 –38
–12.11
I
OL
Output
Sink
Current
0/ 5
0.4
5
2.1
1.6
3.2
1.2
HCC
Types
0/10
0.5
10 6.25
5
10
3.5
0/15
1.5
15
24
19
38
13
0/ 5
0.4
5
1.7
1.36 3.2
1.02
HCF
Types
0/10
0.5
10 5.31
4.25 10
3.18
0/15
1.5
15 20.18
16.15 38
12.11
I
IH
,I
IL
Input
leakage
Current
HCC
Types
0/18
18
±
0.1
±
10
–5
±
0.1
±
1
Any Input
m
A
HCF
Types
0/15
15
±
0.3
±
10
–5
±
0.3
±
1
C
I
Input Capacitance
Any Input
15 22.5
pF
*T
Lo w
=–55
Cfor
HCC
device : – 40
°
Cfor
HCF
device.
Cfor
HCF
device.
The Noise Margin for both ”1” and ” 0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
°
Cfor
HCC
device : + 85
°
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
=25
°
C, C
L
= 50pF, R
L
= 200k
W
,
typical temperature coefficient for all V
DD
values is 0.3 %/
°
C, all input rise and fall times = 20ns)
Test Conditions
Value
Symbol
Parameter
Unit
V
DD
(V)
Min. Typ. Max.
t
PLH
,t
PHL
Propagation Delay Time
5
60
120
10
35
70
ns
15
25
50
t
THL
,t
TL H
Transition Time
5
40
80
10
20
40
ns
15
15
30
4/12
°
*T
High
= + 125
HCC/HCF4041UB
Minimum Output High (source) Current Charac-
teristics.
Typical Output Low (sink) Current.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Typical Transition Time vs. Load Capacitance.
Typical Propagation Delay Time vs. Load Capacit-
ance.
5/12
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