mj11028rev0.pdf

SEMICONDUCTOR TECHNICAL DATA

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. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•

High DC Current Gain — h FE = 1000 (Min) @ I C = 25 Adc

h FE = 400 (Min) @ I C = 50 Adc

•

Curves to 100 A (Pulsed)

•

Diode Protection to Rated I C

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistor

•

Junction Temperature to + 200 C

MAXIMUM RATINGS

*Motorola Preferred Device

Rating

Symbol

MJ11028

MJ11029

MJ11030

MJ11031

MJ11032

MJ11033

Unit

50 AMPERE

COMPLEMENTARY

SILICON

DARLINGTON

POWER TRANSISTORS

60 – 120 VOLTS

300 WATTS

Collector–Emitter Voltage

V CEO

120

Vdc

Collector–Base Voltage

V CB

120

Vdc

Emitter–Base Voltage

V EB

Vdc

Collector Current — Continuous

Peak

I C

I CM

100

Adc

Base Current — Continuous

I B

Adc

Total Power Dissipation @ T C = 25 C

Derate above 25 C @ T C = 100 C

P D

300

1.71

Watts

W/ C

Operating and Storage Junction

Temperature Range

T J , T stg

– 55 to + 200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for

Soldering Purposes for 10 seconds

T L

275

CASE 197A–05

TO–204AE (TO–3)

Thermal Resistance Junction to Case

q JC

0.584

PNP

MJ11029

MJ11031

MJ11033

COLLECTOR

NPN

MJ11028

MJ11030

MJ11032

COLLECTOR

BASE

9 3.0 k

9 25

9 3.0 k

9 25

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Bipolar Power Transistor Device Data

Motorola, Inc. 1995

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

MJ11028, MJ11029

V (BR)CEO

120

—

Vdc

(I C = 1 00 mAdc, I B = 0)

MJ11030, MJ11031

MJ11032, MJ11033

Collector–Emitter Leakage Current

(V CE = 60 Vdc, R BE = 1 k ohm)

I CER

mAdc

MJ11028, MJ11029

—

(V CE = 90 Vdc, R BE = 1 k ohm)

MJ11030, MJ11031

(V CE = 120 Vdc, R BE = 1 k ohm)

MJ11032, MJ11033

(V CE = 60 Vdc, R BE = 1 k ohm, T C = 150 C)

MJ11028, MJ11029

(V CE = 90 Vdc, R BE = 1 k ohm, T C = 150 C)

MJ11030, MJ11031

(V CE = 120 Vdc, R BE = 1 k ohm, T C = 150 C)

MJ11032, MJ11033

Emitter Cutoff Current (V BE = 5 Vdc, I C = 0)

I EBO

—

mAdc

Collector–Emitter Leakage Current (V CE = 50 Vdc, I B = 0)

I CEO

—

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(I C = 25 Adc, V CE = 5 Vdc)

(I C = 50 Adc, V CE = 5 Vdc)

h FE

—

1 k

400

18 k

—

Collector–Emitter Saturation Voltage

(I C = 25 Adc, I B = 250 mAdc)

(I C = 50 Adc, I B = 500 mAdc)

V CE(sat)

Vdc

—

2.5

3.5

Base–Emitter Saturation Voltage

(I C = 25 Adc, I B = 200 mAdc)

(I C = 50 Adc, I B = 300 mAdc)

V BE(sat)

Vdc

—

3.0

4.5

(1) Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.

100

There are two limitations on the power–handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate I C – V CE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on T J(pk) = 200 C; T C is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by se-

cond breakdown.

BONDING WIRE LIMITED

THERMALLY LIMITED @ T C = 25 ° C

SECOND BREAKDOWN LIMITED

0.5

MJ11028, 29

MJ11030, 31

MJ11032, 33

0.2

0.1

0.2

0.5

10 20

100

200

V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

100 k

50 k

V CE = 5 V

T J = 25 ° C

MJ11029, MJ11031, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

20 k

10 k

5 k

T J = 25 ° C

I C /I B = 100

V BE(sat)

2 k

MJ11029, MJ11031, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

1 k

500

200

80 m s

(PULSED)

V CE(sat)

80 m s

(PULSED)

100

I C , COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

Figure 4. “On” Voltage

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–T– SEATING

PLANE

2 PL

INCHES

MILLIMETERS

0.30 (0.012)

Y M

DIM MIN

MAX

MIN

MAX

A 1.530 REF 38.86 REF

B 0.990 1.050 25.15 26.67

C 0.250 0.335 6.35 8.51

D 0.057 0.063 1.45 1.60

E 0.060 0.070 1.53 1.77

G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC

K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC

N 0.760 0.830 19.31 21.08

Q 0.151 0.165

–Y–

–Q–

3.84

4.19

0.25 (0.010)

1.187 BSC

30.15 BSC

0.131 0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A–05

TO–204AE (TO–3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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