H11G1.pdf

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11G1/D
GlobalOptoisolator ]
[CTR = 1000% Min]
! !
! "! "! !
[CTR = 1000% Min]
[CTR = 200% Min]
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base–emitter resistors. The on–chip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
•
*Motorola Preferred Devices
STYLE 1 PLASTIC
High CTR, H11G1 & H11G2 — 1000% (@ I F = 10 mA), 500% (@ I F = 1 mA)
•
High V (BR)CEO , H11G1 — 100 Volts, H11G2 — 80 Volts
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
6
1
Interfacing and coupling systems of different potentials and impedances
STANDARD THRU HOLE
CASE 730A–04
•
Phase and Feedback Controls
•
General Purpose Switching Circuits
•
Solid State Relays
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
SCHEMATIC
Symbol
Value
Unit
1
6
INPUT LED
Reverse Voltage
V R
6
Volts
2
5
Forward Current — Continuous
I F
60
mA
Forward Current — Peak
Pulse Width = 300 m s, 2% Duty Cycle
I F
3
Amps
3
4
LED Power Dissipation @ T A = 25
°
C
P D
120
1.41
mW
mW/ ° C
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
Derate above 25
°
C
OUTPUT DETECTOR
Collector–Emitter Voltage
H11G1
H11G2
H11G3
V CEO
100
80
55
Volts
Emitter–Base Voltage
V EBO
7
Volts
Collector Current — Continuous
I C
150
mA
Detector Power Dissipation @ T A = 25
°
C
P D
150
1.76
mW
mW/
Derate above 25
°
C
°
C
TOTAL DEVICE
Total Device Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
250
2.94
mW
mW/ ° C
Operating Junction Temperature Range (2)
T A
– 55 to +100
° C
Storage Temperature Range (2)
T stg
– 55 to +150
° C
Soldering Temperature (10 s)
T L
260
°
C
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V ISO
7500
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
W
Motorola Optoelectronics Device Data
1
•
Motorola, Inc. 1995
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ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise no t ed) (1)
Characteristic
Symbol
Min
Typ (1)
Max
Unit
INPUT LED
Reverse Leakage Current (V R = 3 V)
I R
—
0.05
10
m
A
Forward Voltage I F = 10 mA)
V F
—
1.1
1.5
Volts
Capacitance (V = 0 V, f = 1 MHz)
C J
—
18
—
pF
C and I F = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(I C = 1 mA, I F = 0)
°
V (BR)CEO
Volts
H11G1
H11G2
H11G3
100
80
55
—
—
—
—
—
—
Collector–Base Breakdown Voltage
(I C = 100 m A, I F = 0)
V (BR)CBO
Volts
H11G1
H11G2
H11G3
100
80
55
—
—
—
—
—
—
Emitter–Base Breakdown Voltage (I E = 100 m A, I F = 0)
V (BR)EBO
7
—
—
Volts
Collector–Emitter Dark Current
(V CE = 80 V)
H11G1
I CEO
—
—
—
—
—
—
—
—
—
—
100
100
100
100
100
nA
m A
nA
m A
nA
(V CE = 80 V, T A = 80 ° C)
H11G1
(V CE = 60 V)
H11G2
(V CE = 60 V, T A = 80 ° C)
H11G2
(V CE = 30 V)
H11G3
Capacitance (V CB = 10 V, f = 1 MHz)
C CB
—
6
—
pF
COUPLED (T A = 25 ° C unless otherwise noted)
Collector Output Current
(V CE = 1 V, I F = 10 mA)
I C (CTR) (2)
mA (%)
H11G1, 2
100 (1000)
5 (500)
2 (200)
—
—
—
—
—
—
(V CE = 5 V, I F = 1 mA)
H11G1, 2
(V CE = 5 V, I F = 1 mA)
H11G3
Collector–Emitter Saturation Voltage
(I F = 1 mA, I C = 1 mA)
V CE(sat)
Volts
H11G1, 2
—
—
—
0.75
0.85
0.85
1
1
1.2
(I F = 16 mA, I C = 50 mA)
H11G1, 2
(I F = 20 mA, I C = 50 mA)
H11G3
Isolation Surge Voltage (3,4) (60 Hz ac Peak, 1 Second)
V ISO
7500
—
—
Vac(pk)
Isolation Resistance (3) (V = 500 Vdc)
—
10 11
—
Ohms
Isolation Capacitance (3) (V = 0 V, f = 1 MHz)
C IO
—
2
—
pF
SWITCHING (T A = 25 ° C)
Turn–On Time
(I F = 10 mA, V CC = 5 V, R L = 100
W
,
t on
—
5
—
m
s
(I F = 10 mA, V CC = 5 V, R L = 100
Pulse Width 300
s, f = 30 Hz)
W
Turn–Off Time
m
t off
—
100
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I C /I F x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, V ISO , is an internal device dielectric breakdown rating.
2
Motorola Optoelectronics Device Data
DARLINGTON OUTPUT (T A = 25
Pulse Width 300
s, f = 30 Hz)
385287838.003.png 385287838.004.png 385287838.005.png 385287838.006.png 385287838.007.png 385287838.008.png 385287838.009.png 385287838.010.png
TYPICAL CHARACTERISTICS
100
100
I F = 50 mA
10
10
I F = 5 mA
NORMALIZED TO:
V CE = 5 V
I F = 1 mA (300 m s PULSES)
NORMALIZED TO:
T A = 25
1
C
I F = 1 mA (300
°
m
s PULSES)
V CE = 5 V
1
I F = 1 mA
0.1
0.1
–60
I F = 0.5 mA
0.01
0.1
1
10
100
1000
–40 –20
0
20
40 60
80 100 120 140
I F , IRED INPUT CURRENT (mA)
Figure 1. Output Current versus Input Current
T A , AMBIENT TEMPERATURE ( ° C)
Figure 2. Output Current versus Temperature
100
2
I F = 50 mA
PULSE ONLY
PULSE OR DC
1.8
I F = 10 mA
I F = 2 mA
10
1.6
I F = 1 mA
1
I F = 0.5 mA
1.4
0.1
NORMALIZED TO:
T A = 25 ° C
I F = 1 mA (300 m s PULSES)
V CE = 5 V
T A = –55 ° C
1.2
25 ° C
0.01
0.2
1
100
°
C
1
10
20
1
10
100
1000
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Output Current versus
Collector–Emitter Voltage
I F , LED FORWARD CURRENT (mA)
Figure 4. LED Forward Characteristics
100 k
10
V CE = 80 V
10 k
R L = 10
W
R L = 100
W
R L = 1 k
W
1000
V CE = 30 V
1
100
10
V CE = 10 V
NORMALIZED TO:
I F = 10 mA
R L = 100 OHMS
V CC = 5 V
1
0.1
0.1
0
10
20
30 40
50
60
70
80
90 100
1
10
T A , AMBIENT TEMPERATURE (
°
C)
t on + t off , TOTAL SWITCHING SPEED (NORMALIZED)
Figure 5. Collector–Emitter Dark Current
versus Temperature
Figure 6. Input Current versus Total
Switching Speed (Typical Values)
Motorola Optoelectronics Device Data
3
385287838.011.png 385287838.012.png
INTERFACING TTL OR CMOS LOGIC TO 50–VOLT, 1000–OHMS RELAY
FOR TELEPHONY APPLICATIONS
In order to interface positive logic to negative–powered electromechanical relays, a change in voltage level and polarity plus
electrical isolation are required. The H11Gx can provide this interface and eliminate the external amplifiers and voltage divider
networks previously required. The circuit below shows a typical approach for the interface.
V DD
R
TO 1
H11Gx
CMOS
TO 2
1
6
5 V
2
5
180 W
1/4 W
TO 1
RELAY GROUND
3
4
1000 W
–50 V
TTL
TO 2
50 mA
1N4004
4
Motorola Optoelectronics Device Data
385287838.013.png 385287838.014.png 385287838.015.png 385287838.016.png 385287838.017.png
PACKAGE DIMENSIONS
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B–
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
1
3
F
C
L
INCHES
MILLIMETERS
4 PL
N
DIM MIN
MAX
MIN
MAX
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
D
0.016 0.020
0.41
0.50
–T–
K
E
0.040 0.070
1.02
1.77
F
0.010 0.014
0.25
0.36
SEATING
PLANE
J
G
0.100 BSC
2.54 BSC
G
6 PL
J
0.008 0.012
0.21
0.30
M
0.13 (0.005)
M
T
B
M
A M
K
0.100 0.150
2.54
3.81
E
6 PL
L
0.300 BSC
7.62 BSC
D
6 PL
M
0
15
0
15
N
0.015 0.100
0.38
2.54
0.13 (0.005)
T
A
B M
M
M
CASE 730A–04
ISSUE G
–A–
6
4
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
3
INCHES
MILLIMETERS
F 4 PL
L
DIM MIN
MAX
MIN
MAX
H
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
C
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
–T–
F
0.010 0.014
0.25
0.36
G
J
SEATING
PLANE
G
0.100 BSC
2.54 BSC
H
0.020 0.025
0.51
0.63
K
E 6 PL
6 PL
J
0.008 0.012
0.20
0.30
K
0.006 0.035
0.16
0.88
D 6 PL
0.13 (0.005)
M
T
B
M
A M
L
0.320 BSC
8.13 BSC
0.13 (0.005)
T
A
B M
S
0.332 0.390
8.43
9.90
M
M
CASE 730C–04
ISSUE D
*Consult factory for leadform
option availability
Motorola Optoelectronics Device Data
5
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