PBYR100.PDF

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Low leakage, platinum barrier
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
schottky rectifier diodes in a plastic
envelope featuring low forward
PBYR10-
60
80
100
voltage drop and absence of stored
V RRM
Repetitive peak reverse
60
80
100
V
charge. These devices can withstand
voltage
reverse voltage transients and have
V F
Forward voltage
0.7
0.7
0.7
V
guaranteed reverse surge capability.
I F(AV)
Forward current
10
10
10
A
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - TO220AC
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
cathode (k)
2
anode (a)
k
a
1
2
tab cathode (k)
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-60
-80
-100
V RRM
Repetitive peak reverse voltage
-
60
80
100
V
V RWM
Crest working reverse voltage
-
60
80
100
V
V R
Continuous reverse voltage
T mb
£
139 ˚C
-
60
80
100
V
I F(AV)
Average forward current
square wave;
d
= 0.5;
-
10
A
T mb
£
133 ˚C
I FRM
Repetitive peak forward current t = 25
m
s;
d
= 0.5;
-
20
A
T mb
£
133 ˚C
I FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T j = 125 ˚C prior
to surge; with reapplied
V RWM(max)
I 2 t
I 2 t for fusing
t = 10 ms
-
91
A 2 s
I RRM
Repetitive peak reverse current t p = 2
m
s;
d
= 0.001
-
1
A
I RSM
Non-repetitive peak reverse
t p = 100
m
s
-
1
A
current
T stg
Storage temperature
-65
175
˚C
T j
Operating junction temperature
-
150
˚C
October 1994
1
Rev 1.100
schottky barrier
337904769.007.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
R th j-a
Thermal resistance junction to in free air.
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 10 A; T j = 125˚C
-
0.61 0.70
V
I F = 20 A; T j = 125˚C
-
0.74 0.85
V
I F = 20 A; T j = 25˚C
-
0.88 0.95
V
I R
Reverse current
V R = V RWM ; T j = 25 ˚C
-
5.0
150
m
A
V R = V RWM ; T j = 125 ˚C
-
5.0
15
mA
C d
Junction capacitance
f = 1MHz; V R = 5V; T j = 25 ˚C to
-
420
-
pF
125 ˚C
October 1994
2
Rev 1.100
schottky barrier
337904769.008.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
15
PF / W
PBYR10100
Tmb / C
120
IR / mA
PBYR10100
100
Vo = 0.550 V
Rs = 0.015 Ohms
D = 1.0
10
150 C
10
130
125 C
0.5
0.2
1
100 C
0.1
5
t p
t p
T
140
0.1
75 C
I
D =
Tj = 50 C
T
t
0.01
0
150
0
50
100
0
5
10
15
VR/ V
IF(AV) / A
Fig.1. Maximum forward dissipation P F = f(I F(AV) );
square current waveform where I F(AV) =I F(RMS) x
Ö
D.
Fig.4. Typical reverse leakage current; I R = f(V R );
parameter T j
PF / W
PBYR10100
Tmb / C
10000
Cd/ pF
PBYR20100CT
10
130
Vo = 0.550 V
Rs = 0.015 Ohms
a = 1.57
134
8
1.9
2.2
1000
2.8
6
138
4
4
142
100
2
146
0
150
10
0
2
4
6
8
10
1
10
100
IF(AV) / A
VR/ V
Fig.2. Maximum forward dissipation P F = f(I F(AV) );
sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
Fig.5. Typical junction capacitance; C d = f(V R );
f = 1 MHz; T j = 25˚C to 125 ˚C.
IF / A
PBYR10100
Zth j-mb (K/W)
50
10
40
Tj = 25 C
Tj = 125 C
Typ
Max
1
30
20
0.1
P
t p
D
10
t
0
0.01
0
0.5
1
1.5
2
10us
1ms
0.1s
10s
VF / V
tp / s
Fig.3. Typical and maximum forward characteristic
I F = f(V F ); parameter T j
Fig.6. Transient thermal impedance; Z th j-mb = f(t p ).
October 1994
3
Rev 1.100
schottky barrier
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
15,8
max
3,0
13,5
min
1,3
max
(2x )
12
0,9 max (2x)
0,6
5,08
2,4
Fig.7. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
4
Rev 1.100
schottky barrier
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
5
Rev 1.100
schottky barrier
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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