KSC1507.pdf

(38 KB) Pobierz
KSC1507 NPN Epitaxial Silicon Transistor
KSC1507
Color TV Chroma Output
• High Collector-Emitter Voltage : V CEO =300V
• Current Gain Bandwidth Product : f T =40MHz (Min.)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T C =25 °
C unless otherwise noted
Symbol
Parameter
Value
Units
V CBO
Collector-Base Voltage
300
V
V CEO
Collector-Emitter Voltage
300
V
V EBO
Emitter-Base Voltage
7
V
I C
Collector Current
200
A
P C
Collector Dissipation (T C =25
C)
15
W
T J
Junction Temperature
150
C
T STG
Storage Temperature
- 55 ~ 150
C
Electrical Characteristics T C =25 °
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
BV CBO
Collector-Base Breakdown Voltage
I C = 100
A, I E = 0
300
V
BV CEO
Collector-Emitter Breakdown Voltage
I C = 10mA, I B = 0
300
V
BV EBO
Emitter-Base Breakdown Voltage
I E = - 10
A, I C = 0
7
V
I CBO
Collector Cut-off Current
V CB = 200V, I E = 0
100
A
h FE
DC Current Gain
V CE = 10V, I C = 10mA
40
400
V CE (sat)
Collector-Emitter Saturation Voltage
I C = 50mA, I B = 5mA
2.0
V
f T
Current Gain Bandwidth Product
V CE = 30V, I C = 10mA
40
80
MHz
C ob
Output Capacitance
V CB = 50V, I E = 0,
f = 1MHz
4
pF
h FE Classification
Classification
R
O
Y
G
h FE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
214309729.013.png 214309729.014.png 214309729.015.png 214309729.016.png 214309729.001.png
 
214309729.002.png 214309729.003.png 214309729.004.png 214309729.005.png 214309729.006.png 214309729.007.png 214309729.008.png 214309729.009.png
Typical Characteristics
20
1000
V CE = 10V
18
I B = 140uA
16
I B = 120uA
14
12
I B = 100uA
10
I B = 80uA
I B = 60uA
100
8
6
4
I B = 40uA
2
I B = 20uA
0
10
0
20
40
60
80
100
120
140
160
180
200
1
10
100
V CE [V], COLLECTOR-EMITTER VOLTAGE
I C [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
I C = 10 I B
I E =0
f=1MHz
10
1
V BE (sat)
V CE (sat)
0.1
0.01
1
1
10
100
1000
1
10
100
I C [mA], COLLECTOR CURRENT
V CB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
20
15
10
5
0
0
25
50
75
100
125
150
T C [ o C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
214309729.010.png
Package Demensions
TO-220
9.90 ±
0.20
4.50 ±
0.20
(8.70)
ø3.60 ±
0.10
1.30 +0.10
–0.05
1.27 ±
0.10
1.52 ±
0.10
0.80 ±
0.10
0.50 +0.10
–0.05
2.40 ±
0.20
2.54TYP
[2.54 ±
2.54TYP
[2.54 ±
0.20 ]
0.20 ]
10.00 ±
0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
214309729.011.png
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E 2 CMOS™
FACT™
FACT Quiet Series™
FAST ®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench ®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
214309729.012.png
Zgłoś jeśli naruszono regulamin