BD136.PDF
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PNP SILICON TRANSISTOR
BD136
BD138/BD140
PNP SILICON TRANSISTORS
n
SGS-THOMSON PREFERRED SALESTYPES
PNP TRANSISTOR
n
DESCRIPTION
The BD136, BD138 and BD140 are silicon
epitaxial planar PNP transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementary circuits.
The complementary NPN types are the BD135
BD137 and BD139.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BD136
BD138
BD140
V
CBO
Collector-Base Voltage (I
E
= 0)
-45
-60
-80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-45
-60
-80
V
V
EBO
Emitter-Base Voltage (I
C
=0)
-5
V
I
C
Collector Current
-1.5
A
I
CM
Collector Peak Current
-3
A
I
B
Base Current
-0.5
A
P
tot
Total Dissipation at T
c
3
25
o
C
12. 5
W
P
tot
Total Dissipation at T
amb
3
25
o
C
1.25
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
June 1997
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BD136/BD138/BD140
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
10
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
=25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
=0)
V
CB
=-30V
V
CB
=-30V T
C
= 125
-0.1
-10
m
A
o
C
m
A
I
EBO
Emitter Cut-off Current
(I
C
=0)
V
EB
=-5V
-10
m
A
V
CEO(sus )
*
Collector-Emitter
Sustaining Voltage
I
C
=-30mA
for
BD136
for
BD138
for
BD140
-45
-60
-80
V
V
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
=-0.5A
I
B
= -0.05 A
-0.5
V
V
BE
*
Base-Emitter Voltage
I
C
=-0.5A
V
CE
=-2V
-1
V
h
FE
*
DC Current Gain
I
C
=-5mA V
CE
=-2V
I
C
=-0.5A V
CE
=-2V
I
C
=-150mA V
CE
=-2V
25
25
40
250
h
FE
h
FE
G roups
I
C
=-150mA V
CE
=-2V
for BD140 group 10
63
160
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Areas
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BD136/BD138/BD140
SOT-32 (TO-126) MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
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BD136/BD138/BD140
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
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