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4N25V(G)/ 4N35V(G) Series
Optocoupler with Phototransistor Output
Order Nos. and Classification table is on sheet 2.
Description
The 4N25V(G)/ 4N35V(G) series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using a
coplanar technique , providing a fixed distance between
input and output for highest safety requirements.
95 10531
95 10532
Applications
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
For application class I – III at mains voltage < 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, computer peripheral
interface, microprocessor system interface, line
receiver.
These couplers perform safety functions according to the following equipment standards:
VDE 0884
Optocoupler providing protective separation
VDE 0805/IEC 950/EN 60950
Office machines (applied for reinforced isolation for
mains voltage
VDE 0804
Telecommunication apparatus and data processing
3
400 V RMS )
VDE 0860/IEC 65
Safety for mains-operated electronic and related
household apparatus
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
1 (12)
For application class I – IV at mains voltage < 300 V
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4N25V(G)/ 4N35V(G) Series
Approvals:
BSI : BS EN 41003, BS EN 60065 (BS 415)
BS EN 60950 (BS 7002)
Certificate number 7081 and 7402
FIMKO (SETI): EN 60950
Certificate number 41400
U nderwriters L aboratory (UL) 1577
recognized-file No. E-76222
VDE 0884 Certificate number 94778
Creepage current resistance according to
VDE 0303/IEC 112
C omparative T racking I ndex: CTI = 275
Thickness through insulation
.
0.75 mm
General features:
Isolation materials according to UL94-VO
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
VDE 0884 related features:
Rated impulse voltage (transient overvoltage)
V IOTM = 6 kV peak
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Therefore extra low coupling capacity
typical 0.2 pF, high C ommon M ode R ejection
Isolation test voltage (partial discharge test voltage)
V pd = 1.6 kV
Rated isolation voltage (RMS includes DC)
V IOWM = 600 V RMS (848 V peak)
Low temperature coefficient of CTR
Coupling System A
Rated recurring peak voltage (repetitive)
V IORM = 600 V RMS
Order Schematic
Part Numbers
CTR-Ranking
4N25V/ 4N25GV
>20%
4N35V/ 4N35GV
>100%
Suffix:
G = Leadform 10.16 mm
Pin Connection
B
C
E
6
5
4
1
2
3
A (+) C (–) nc
2 (12)
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
Features
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4N25V(G)/ 4N35V(G) Series
Absolute Maximum Ratings
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Reverse voltage
V R
5
V
Forward current
I F
60
mA
Forward surge current
t p
3
10 s
I FSM
3
A
Power dissipation
T amb
3
25
°
C
P tot
100
mW
Junction temperature
T j
125
°
C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V CEO
32
V
Emitter collector voltage
V CEO
7
V
Collector current
I C
50
mA
Collector peak current
t p /T = 0.5, t p
3
10 ms
I CM
100
mA
Power dissipation
T amb
3
25
°
C
P tot
150
mW
Junction temperature
T j
125
°
C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
V IO
3.75
kV
Total power dissipation
T amb
3
25
°
C
P tot
250
mW
Ambient temperature range
T amb
–55 to +100
°
C
Storage temperature range
T stg
–55 to +125
°
C
Soldering temperature
2 mm from case, t
3
10 s
T sd
260
°
C
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
3 (12)
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4N25V(G)/ 4N35V(G) Series
Maximum Safety Ratings 1) (according to VDE 0884)
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T amb
3
25
C
P si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V IOTM
6
kV
Safety temperature
T si
150
C
1)
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Derating Diagram
300
250
200
150
Phototransistor
Psi ( mW )
100
50
IR Diode
Isi ( mA )
0
0
25
50
75
100
125
150
94 9182
T amb ( °C )
4 (12)
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
°
°
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4N25V(G)/ 4N35V(G) Series
Electrical Characteristics
C
Input (Emitter)
°
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I F = 50 mA 2)
V F
1.2
1.4
V
Junction capacitance
V R = 0, f = 1 MHz
C j
50
pF
Output (Detector)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I C = 1 mA
V CEO
32
V
Emitter collector voltage
I E = 100 A
V ECO
7
V
Collector emitter
cut-off current
V CE = 10 V, I F = 0 2)
V CE = 30 V, I F = 0 2)
I CEO
I CEO
50
500
nA
A
Coupler
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Isolation test voltage
(RMS)
f = 50 Hz, t = 1 s
V IO
3.75
V
Collector emitter
saturation voltage
I F = 50 mA, I C = 2 mA
V CEsat
0.3
V
Cut-off frequency
V CE = 5 V, I F = 10 mA,
R L = 100
f c
110
kHz
Coupling capacitance
f = 1 MHz
C k
1
pF
2)
T amb = 100
°
C
Current Transfer Ratio (CTR)
Parameters
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I C /I F
V CE = 10 V, I F = 10 mA
4N25V(G)
CTR
0.20
1
I C /I F
V CE = 10 V, I F = 10 mA
4N35V(G)
CTR
1.00
1.5
I C /I F
V CE = 10 V, I F = 10 mA,
T amb = 100
4N35V(G)
CTR
0.40
C
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
5 (12)
T amb = 25
°
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