FDS6680.pdf

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323061977 UNPDF
April 1998
FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFET
General Description Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
11.5 A, 30 V. R DS(ON) = 0.010 W @ V GS = 10 V
R DS(ON) = 0.015 W @ V GS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T A = 25 o C unless other wise noted
Symbol
Parameter
FDS6680
Units
V DSS
Drain-Source Voltage
30
V
V GSS
Gate-Source Voltage
±20
V
I D
Drain Current - Continuous (Note 1a)
11.5
A
- Pulsed
50
P D
Power Dissipation for Single Operation (Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R q JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50
°C/W
R q JC
Thermal Resistance, Junction-to-Case (Note 1)
25
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6680 Rev.E1
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Electrical Characteristics ( T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
Drain-Source Breakdown Voltage
V GS = 0 V, I D = 250 µA
30
V
D BV DSS / D T J
Breakdown Voltage Temp. Coefficient
I D = 250 µA, Referenced to 25 o C
23
mV/ o C
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V, V GS = 0 V
1
µA
T J = 55°C
10
µA
I GSSF
Gate - Body Leakage, Forward
V GS = 20 V, V DS = 0 V
100
nA
I GSSR
Gate - Body Leakage, Reverse
V GS = -20 V, V DS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 µA
1
1.7
3
V
D V GS(th) / D T J
Gate Threshold Voltage Temp.Coefficient
I D = 250 µA, Referenced to 25 o C
-5
mV/ o C
R DS(ON)
Static Drain-Source On-Resistance
V GS = 10 V, I D = 11.5 A
0.0085 0.01
W
T J =125°C
0.014 0.017
V GS = 4.5 V, I D = 9.5 A
0.0125 0.015
I D(ON)
On-State Drain Current
V GS = 10 V, V DS = 5 V
50
A
g FS
Forward Transconductance
V DS = 15 V, I D = 11.5 A
40
S
DYNAMIC CHARACTERISTICS
C iss
Input Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
2070
pF
C oss
Output Capacitance
510
pF
C rss
Reverse Transfer Capacitance
235
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
Turn - On Delay Time
V DS = 15 V, I D = 1 A
13
21
ns
t r
Turn - On Rise Time
V GS = 10 V , R GEN = 6 W
10
18
ns
t D(off)
Turn - Off Delay Time
36
58
ns
t f
Turn - Off Fall Time
13
23
ns
Q g
Total Gate Charge
V DS = 15 V, I D = 11.5 A,
19
27
nC
Q gs
Gate-Source Charge
V GS = 5 V
7
nC
Q gd
Gate-Drain Charge
6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 2.1 A (Note 2)
1.2
V
Notes:
1. R q JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R q JC is guaranteed by
design while R q CA is determined by the user's board design.
a. 50 O C/W on a 1 in 2 pad
of 2oz copper.
b. 105 O C/W on a 0.04 in 2
pad of 2oz copper.
c. 125 O C/W on a 0.006 in 2 pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6680 Rev.E1
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Typical Electrical Characteristics
50
3
V = 10V
GS
4.5
6.0
4.0
V = 3.5V
GS
40
5.0
2.5
30
2
4.0
3.5
4.5
20
1.5
5.0
6.0
10
1
10
3.0
0
0
0.5
1
1.5
2
2.5
0.5
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics .
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage .
1.8
I = 11.5A
D
0.04
I = 11.5A
D
V =10V
GS
1.6
0.03
1.4
1.2
0.02
T = 125 C
A
o
1
0.01
0.8
T = 25 C
A
o
0.6
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V ,GATE-SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation with
Temperature .
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
T = -55°C
J
50
V =0V
GS
V = 10V
DS
25°C
10
40
125°C
T = 125°C
J
1
30
25°C
0.1
20
-55°C
0.01
10
0.001
0
0
1
2
3
4
5
0.0001
V , GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
1.2
GS
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6680 Rev.E1
D
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Typical Electrical And Thermal Characteristics
10
3000
I = 11.5A
D
V = 10V
DS
2000
C iss
15V
8
20V
1000
6
C oss
500
4
2
C rss
200
f = 1 MHz
V = 0V
GS
0
0
10
20
30
40
100
Q , GATE CHARGE (nC)
g
0.1
0.2
0.5
1
2
5
10
20 30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
50
SINGLE PULSE
R =See Note 1c
T = 25°C
20
40
q JA
10
A
3
30
1
20
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
GS
0.1
10
q JA
A
0
0.01
0.001
0.01
0.1
1
10
100 300
0.1
0.2
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area .
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.2
0.2
R (t) = r(t) * R
R =See Note 1c
q JA
q JA
q JA
0.1
0.1
0.05
0.02
0.01
0.05
P(pk)
0.02
t 1
t 2
0.01
Single Pulse
0.005
T - T = P * R (t)
q JA
A
0.002
Duty Cycle, D = t /t
1 2
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680 Rev.E1
J
1
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E 2 CMOS TM
FACT™
FACT Quiet Series™
FAST ®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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