FDS6682.pdf

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323062014 UNPDF
December 2001
FDS6682
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R DS(ON) in a small package.
•
14 A, 30 V. R DS(ON) = 7.5 m
Ω
@ V GS = 10 V
R DS(ON) = 9.0 m
Ω
@ V GS = 4.5 V
•
Low gate charge (22 nC typical)
•
High performance trench technology for extremely
low R DS(ON)
Applications
•
High power and current handling capability
•
DC/DC converter
D
D
D
5
4
D
6
3
G
7
2
S
S
8
1
SO-8
S
Absolut e Maximum Ratings T A =25 o C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DSS
Drain-Source Voltage
30
V
V GSS
Gate-Source Voltage
±
16
V
I D
Drain Current – Continuous
(Note 1a)
14
A
– Pulsed
50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50
°
C/W
R θ JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6682
FDS6682
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS6682 Rev C (W)
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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage V GS = 0 V,
I D = 250
µ
A
30
V
BV DSS
∆
Breakdown Voltage Temperature
Coefficient
I D = 250
A, Referenced to 25
°
C
23
mV/
°
C
T J
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V, V GS = 0 V
10
µ
A
I GSSF
Gate–Body Leakage, Forward
V GS = 16 V, V DS = 0 V
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –16 V, V DS = 0 V
–100
nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250
µ
A
1
1.7
3
V
V GS(th)
∆
Gate Threshold Voltage
Temperature Coefficient
I D = 250
A, Referenced to 25
°
C
–5.6
mV/
°
C
T J
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V, I D = 14 A
V GS = 4.5 V, I D = 12.5 A
V GS = 4.5 V, I D = 12.5 A, T J =125
5.7
6.6
8
7.5
9
11.5
m
Ω
°
C
I D(on)
On–State Drain Current
V GS = 10 V, V DS = 5 V
50
A
g FS
Forward Transconductance
V DS = 10 V, I D = 14 A
70
S
Dynamic Characteristics
C iss
Input Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
2310
pF
C oss
Output Capacitance
582
pF
C rss
Reverse Transfer Capacitance
237
pF
Switching Characteristics (Note 2)
t d(on)
Turn–On Delay Time
V DD = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6
10
20
ns
Ω
t r
Turn–On Rise Time
7
14
ns
t d(off)
Turn–Off Delay Time
44
70
ns
t f
Turn–Off Fall Time
16
29
ns
Q g
Total Gate Charge
V DS = 15 V, I D = 14 A,
V GS = 5 V
22
31
nC
Q gs
Gate–Source Charge
6.4
nC
Q gd
Gate–Drain Charge
8
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.1 A (Note 2)
0.7
1.2
V
JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC is guaranteed by design while R
CA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
FDS6682 Rev C(W)
∆
µ
∆
µ
Notes:
1. R
θ
θ
323062014.001.png 323062014.002.png 323062014.003.png 323062014.004.png
Typical Characteristics
80
2.2
V GS = 10V 4.5V
3.5V
2
V GS = 3.0V
60
1.8
3.0V
1.6
40
1.4
3.5V
4.0V
20
1.2
4.5V
6.0V
1
10V
0
0.8
0
0.5
1
1.5
2
2.5
0
20
40
60
80
V DS , DRAIN TO SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.016
I D = 7.0A
I D = 14A
V GS = 10V
1.6
0.014
1.4
0.012
T A = 125 o C
1.2
0.01
1
0.008
T A = 25 o C
0.8
0.006
0.6
0.004
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
100
V DS = 5V
T A = -55 o C
25 o C
V GS = 0V
80
125 o C
10
T A = 125 o C
1
60
0.1
25 o C
40
-55 o C
0.01
20
0.001
0
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6682 Rev C(W)
323062014.005.png 323062014.006.png 323062014.007.png 323062014.008.png 323062014.009.png 323062014.010.png
Typical Characteristics
10
4000
I D = 14A
V DS = 5V
10V
f = 1 MHz
V GS = 0 V
8
15V
3000
C ISS
6
2000
4
C OSS
2
1000
C RSS
0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Q g , GATE CHARGE (nC)
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
100
µ
s
SINGLE PULSE
R
θ
JA = 125°C/W
T A = 25°C
R DS(ON) LIMIT
1ms
40
10
10ms
100ms
1s
30
10s
1
DC
20
V GS = 10V
SINGLE PULSE
R
θ
0.1
JA = 125 o C/W
T A = 25 o C
10
0.01
0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V DS , DRAIN-SOURCE VOLTAGE (V)
t 1 , TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
θ
JA (t) = r(t) + R
θ
JA
0.1
0.1
R
θ
JA = 125 o C/W
0.05
P(pk)
0.02
0.01
t 1
0.01
t 2
JA (t)
Duty Cycle, D = t 1 / t 2
θ
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6682 Rev C(W)
T J - T A = P * R
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT ™
DenseTrench™
DOME™
EcoSPARK™
E 2 CMOS TM
EnSigna TM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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