TPC8009-H.pdf

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TPC8009-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8009-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High speed switching
Small gate charge: Q g = 29 nC (typ.)
Low drain-source ON resistance: R DS (ON) = 8 mΩ (typ.)
High forward transfer admittance: |Y fs | = 16 S (typ.)
Low leakage current: I DSS = 10 µA (max) (V DS = 30 V)
Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, I D = 1 mA)
Maximum Ratings (Ta
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
30
V
Drain-gate voltage (R GS
20 k
)
V DGR
30
V
JEDEC ―
Gate-source voltage
V GSS
20
V
DC
(Note 1)
I D
13
JEITA
―
Drain current
A
Pulse (Note1)
I DP
52
TOSHIBA
2-6J1B
Drain power dissipation
(t
10 s)
Weight: 0.080 g (typ.)
P D
1.9
W
(Note 2a)
Drain power dissipation
(t
10 s)
P D
1.0
W
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
E AS
219
mJ
(Note 3)
Avalanche current
I AR
13
A
8
7
6
5
Repetitive avalanche energy
(Note 2a) (Note 4)
E AR
0.19
mJ
Channel temperature
T ch
150
°C
Storage temperature range
T stg
55 to 150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
1
2
3
4
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-01-17
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TPC8009-H
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
(Note 2a)
R th (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
(Note 2b)
R th (ch-a)
125
°C/W
Marking (Note 5)
TPC8009
H
TYPE
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4
25.4
0.8
25.4
25.4
0.8
(Unit: mm)
(Unit: mm)
(a)
(b)
Note 3: V DD
24 V, T ch
25°C (initial), L
1.0 mH, R G
25
, I AR
13 A
Note 4: Repetitive rating; pulse width limited by max channel temperature.
Note 5:
on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
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10 s)
10 s)
323067856.021.png 323067856.022.png
TPC8009-H
Electrical Characteristics (Ta
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I GSS
GS
16 V, V DS
0 V
10
A
Drain cut-OFF current
I DSS
DS
30 V, V GS
0 V
10
A
Drain-source breakdown voltage
V (BR) DSS I D
10 mA, V GS
0 V
30
V
V (BR) DSX I D
10 mA, V GS
20 V
15
Gate threshold voltage
V th
V DS
10 V, I D
1 mA
1.1
2.3
V
V GS
4.5 V, I D
6.5 A
11
15
Drain-source ON resistance
R DS (ON)
m
V GS
10 V, I D
6.5 A
8
10
Forward transfer admittance
|Y fs |
V DS
10 V, I D
6.5 A
8
16
S
Input capacitance
C iss
1460
Reverse transfer capacitance
C rss
V DS
10 V, V GS
0 V, f
1 MHz
250
pF
Output capacitance
C oss
600
Rise time
t r
5
V GS 10 V
I D
6.5 A
V OUT
0 V
Turn-ON time
t on
13
Switching time
ns
Fall time
t f
12
Turn-OFF time
t off
V DD
15 V
37
Duty
1%, t w
10
s
Total gate charge
(gate-source plus gate-drain)
Q g
V DD
24 V, V GS
10 V, I D
13 A
29
V DD
24 V, V GS
5 V, I D
13 A
16
Gate-source charge 1
Q gs1
4.2
nC
Gate-drain (“miller”) charge
Q gd
V DD
24 V, V GS
10 V, I D
13 A
7.3
Gate switch charge
Q SW
9.1
Source-Drain Ratings and Characteristics (Ta
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current Pulse (Note 1)
I DRP
52
A
Forward voltage (diode)
V DSF
I DR
13 A, V GS
0 V
1.2
V
3
2002-01-17
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TPC8009-H
I D – V DS
I D – V DS
10
Common source
Ta
20
Common source
Ta
10
4
3
25°C Pulse test
10
4
3.1
25°C Pulse test
2.9
2.8
3
8
16
2.9
6
2.7
12
2.8
4
2.6
8
2.5
2
2.5
4
2.7
V GS
2.4 V
V GS
2.5 V
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V DS (V)
Drain-source voltage V DS (V)
I D – V GS
V DS – V GS
50
1
Common source
V DS
Common source
Ta
10 V
Pulse test
0.9
25°C
Pulse test
40
0.8
0.7
30
0.6
0.5
20
0.4
I D
13 A
0.3
25
10
100
0.2
3.5
6.5
Ta
55°C
0.1
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
Gate-source voltage V GS (V)
Gate-source voltage V GS (V)
|Y fs | – I D
R DS (ON) – I D
100
100
Common source
Ta
Ta
55°C
25°C
Pulse test
25
10
100
V GS
4.5 V
10
10
1
Common source
V DS
0.1
1
10
100
0.1
1
10
100
Drain current I D (A)
Drain current I D (A)
4
2002-01-17
10 V
Pulse test
0
1
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TPC8009-H
R DS (ON) – Ta
I DR – V DS
18
100
16
I D
13 、 6.5 、 3.5 A
10
5
14
3
12
10
VGS
0 V
V GS
4.5 V
10
1
I D
13 、 6.5 、 3.5 A
8
6
10
1
4
2
Common source
Pulse test
Common source
Ta
0
80
40
0
40
80
120
160
0.1
0
0.2
0.4
0.6
0.8
1
Ambient temperature Ta (°C)
Drain-source voltage V DS (V)
Capacitance – V DS
V th – Ta
10000
2.5
2
C iss
1000
1.5
C oss
Crss
1
100
Common source
V GS
0.5
Common source
V DS
10 V
0 V
1 mA
Pulse test
f
1 MHz
Ta
25°C
0.1
1
10
100
0
80
40
0
40
80
120
160
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
P D – Ta
Dynamic Input/Output Characteristics
2
30
12
(1)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
Common source Ta
25°C
V DD
24 V
ID
13 A Pulse test
25
10
1.6
VDS
12
20
8
6
1.2
t
10 s
V DD
24 V
(2)
15
6
12
0.8
V GS
10
4
6
0.4
5
2
0
0
50
100
150
200
0
0
5
10
15
20
25
30
0
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
5
2002-01-17
25°C
Pulse test
I D
10
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