TPC8013-H.pdf

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TPC8013-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8013-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High speed switching
Small gate charge: Qg = 48 nc (typ.)
Low drain-source ON resistance: R DS (ON) = 5.4 mΩ (typ.)
High forward transfer admittance: |Y fs | = 25 S (typ.)
Low leakage current: I DSS = 10 µA (max) (V DS = 30 V)
Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, I D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
30
V
Drain-gate voltage (R GS
20 k
)
V DGR
30
V
JEDEC ―
Gate-source voltage
V GSS
20
V
DC
(Note 1)
I D
15
JEITA
―
Drain current
A
Pulse (Note1)
I DP
60
TOSHIBA
2-6J1B
Drain power dissipation
(t
10 s)
Weight: 0.080 g (typ.)
P D
1.9
W
(Note 2a)
Drain power dissipation
(t
10 s)
P D
1.0
W
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
E AS
146
mJ
(Note 3)
8
7
6
5
Avalanche current
I AR
15
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E AR
0.19
mJ
Channel temperature
T ch
150
°C
Storage temperature range
T stg
55 to 150
°C
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
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TPC8013-H
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
(Note 2a)
R th (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
(Note 2b)
R th (ch-a)
125
°C/W
Marking (Note 5)
TPC8013
H
TYPE
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4
25.4
0.8
25.4
25.4
0.8
(unit: mm)
(unit: mm)
(a)
(b)
Note 3: V DD
24 V, T ch
25°C (initial), L
0.5 mH, R G
25
, I AR
15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
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10 s)
10 s)
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TPC8013-H
Electrical Characteristics (Ta
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I GSS
GS
16 V, V DS
0 V
10
A
Drain cut-OFF current
I DSS
DS
30 V, V GS
0 V
10
A
Drain-source breakdown voltage
V (BR) DSS I D
10 mA, V GS
0 V
30
V
V (BR) DSX I D
10 mA, V GS
20 V
15
Gate threshold voltage
V th
V DS
10 V, I D
1 mA
1.1
2.3
V
V GS
4.5 V, I D
7.5 A
6.6
9.5
Drain-source ON resistance
R DS (ON)
m
V GS
10 V, I D
7.5 A
5.4
6.5
Forward transfer admittance
|Y fs |
V DS
10 V, I D
7.5 A
12.5
25
S
Input capacitance
C iss
2380
Reverse transfer capacitance
C rss
V DS
10 V, V GS
0 V, f
1 MHz
410
pF
Output capacitance
C oss
980
Rise time
t r
9.8
V GS 10 V
I D
7.5 A
V OUT
0 V
Turn-ON time
t on
21
Switching time
ns
Fall time
t f
15
V DD
15 V
Turn-OFF time
t off
60
Duty
1%, t w
10
s
Total gate charge
(gate-source plus gate-drain)
Q g
V DD
24 V, V GS
10 V, I D
15 A
46
V DD
24 V, V GS
5 V, I D
15 A
26
Gate-source charge 1
Q gs1
7.2
nC
Gate-drain (“miller”) charge
Q gd
V DD
24 V, V GS
10 V, I D
15 A
12.2
Gate switch charge
Q SW
15.6
Source-Drain Ratings and Characteristics (Ta
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current Pulse (Note 1)
I DRP
60
A
Forward voltage (diode)
V DSF
I DR
15 A, V GS
0 V
1.2
V
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TPC8013-H
I D – V DS
I D – V DS
10
10
Common source
Ta
20
Common source
Ta
4.5
2.9
10 4.5
3.1
25°C, pulse test
3
25°C, pulse test
2.8
8
2.75
16
2.9
2.7
6
12
2.8
2.65
4
2.6
8
2.7
2.6
2
2.5
4
2.4 V
V GS
2.4 V
V GS
2.4 V
0
0
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V DS (V)
Drain-source voltage V DS (V)
I D – V GS
V DS – V GS
50
1
Common source
V DS
Common source
Ta
10 V
Pulse test
25°C
Pulse test
40
0.8
30
0.6
20
0.4
25
I D
15 A
10
0.2
100
3.8
7.5
Ta
55°C
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Gate-source voltage V GS (V)
Gate-source voltage V GS (V)
|Y fs | – I D
R DS (ON) – I D
100
100
Common source
Ta
25°C
Pulse test
Ta
55°C
10
25
100
10
V GS
4.5 V
1
10
Common source
V DS
0.1
1
10
30
0.1
1
10
100
Drain current I D (A)
Drain current I D (A)
4
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10 V
Pulse test
0.1
1
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TPC8013-H
R DS (ON) – Ta
I DR – V DS
12
100
10
10
5
ID
15, 7.5, 3.8
8
10
3
V GS
0 V
V GS
4.5 V
1
6
I D
15, 7.5, 3.8
4
10
1
2
Common source
Ta
Common source
Pulse test
25°C
Pulse test
0
0.1
80
40
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1
Ambient temperature Ta (°C)
Drain-source voltage V DS (V)
Capacitance – V DS
V th – Ta
10000
2.5
Ciss
2
1000
C oss
1.5
C rss
1
100
Common source
VGS
0.5
Common source
V DS
10 V
0 V
f
1 MHz
1 mA
Pulse test
Ta
25°C
10
0
0.1
1
10
100
80
40
0
40
80
120
160
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
P D – Ta
Dynamic input/output characteristics
2
40
16
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
Common source
Ta
(1)
25°C
14
15 A
Pulse test
1.6
30
12
VDD
24 V
6
t
10 s
10
1.2
V DD
24 V
(2)
12
20
8
0.8
VDS
V GS
6
12
10
4
0.4
6
2
0
0
50
100
150
200
0
0
10
20
30
40
50
60
0
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
5
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I D
I D
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