2N2102.pdf

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GENERAL PURPOSE AND SWITCH
2N2102
GENERAL PURPOSE AMPLIFIER AND SWITCH
DESCRIPTION
The 2N2102 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-39 metal case. It is intended for
a wide variety of small-signal and medium power ap-
plications in military and industrial equipments.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-base Voltage (I E =0)
120
V
V CEO
Collector-emitter Voltage (I B =0)
65
V
V CER
Collector-emitter Voltage (R BE
3
10
W
)
80
V
V EBO
Emitter-base Voltage (I C =0)
7
V
I C
Collector Current
1
A
P tot
Total Power Dissipation at T amb
3
25
°
C
1
5
W
W
at T case 3
25
°
C
T stg ,T j Storage and Junction Temperature
– 65 to 200
°
C
January 1989
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23102153.001.png
2N2102
THERMAL DATA
R th j-case
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
35
175
C/W
°
C/W
ELECTRICAL CHARACTERISTICS (T amb =25
°
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(I E =0)
V CB =60V
V CB =60V
2
2
nA
m
T am b =150
°
C
A
I EBO
Emitter Cutoff Current
(I C =0)
V EB =5V
5
nA
V ( BR) CBO Collector-base Breakdown
Voltage (I E =0)
I C =100
m
A
120
V
V CEO (sus) * Collector-emitter Sustaining
Voltage (I B =0)
I C =30mA
65
V
V CE (s at ) * Collector-emitter Saturation
Voltage
I C = 150 mA
I B = 15 mA
0.5
V
V B E (s at ) * Base-emitter Saturation
Voltage
I C = 150 mA
I B = 15 mA
1.1
V
h FE *
DC Current Gain
I C =10
m
A
V CE =10V
V CE =10V
V CE =10V
V CE =10V
V CE =10V
V CE =10V
10
20
35
40
25
10
A
I C =10mA
I C =150 mA
I C =500 mA
I C =1A
m
120
h fe
High Frequency Current
Gain
I C =50mA
f=20MHz
V CE =10V
6
NF
Noise Figure
A
BW = 1 Hz
m
V CE =10V
f = 1 KHz
R G =510
8
dB
W
C CBO
Collector-base Capacitance
I E =0
f = 1 MHz
V CB =10V
15
pF
C EBO
Emitter-base Capacitance
I C =0
f = 1 MHz
V EB = 0.5 V
80
pF
* Pulsed : pulse duration = 300
m
s, duty cycle = 1 %.
2/4
°
I C =100
I C =300
23102153.002.png
2N2102
TO39 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45 o (typ.)
D
A
G
I
H
L
P008B
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2N2102
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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