2n5485.pdf

2N5484

2N5485

2N5486

MMBF5484

MMBF5485

MMBF5486

G S

TO-92

SOT-23

Mark: 6B / 6M / 6H

NOTE: Source & Drain

are interchangeable

N-Channel RF Amplifier

This device is designed primarily for electronic switching

applications such as low On Resistance analog switching.

Sourced from Process 50.

Absolu te Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V DG

Drain-Gate Voltage

V GS

Gate-Source Voltage

- 25

I GF

Forward Gate Current

T J ,T stg

Operating and Storage Junction Temperature Range

-55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES :

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5484-5486

*MMBF5484-5486

P D

Total Device Dissipation

Derate above 25 °

350

2.8

225

1.8

mW/ °

R θ

Thermal Resistance, Junction to Case

125

C/W

R θ

Thermal Resistance, Junction to Ambient

357

556

C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

N-Channel RF Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

V (BR)GSS

Gate-Source Breakdown Voltage

I G = - 1.0 µ A, V DS = 0

- 25

I GSS

Gate Reverse Current

V GS = - 20 V, V DS = 0

V GS = - 20 V, V DS = 0, T A = 100

- 1.0

- 0.2

V GS(off)

Gate-Source Cutoff Voltage

V DS = 15 V, I D = 10 nA

5484

5485

5486

- 0.3

- 0.5

- 2.0

- 3.0

- 4.0

- 6.0

ON CHARACTERISTICS

I DSS

Zero-Gate Voltage Drain Current*

V DS = 15 V, V GS = 0

5484

5485

5486

1.0

4.0

8.0

5.0

SMALL SIGNAL CHARACTERISTICS

g fs

Forward Transfer Conductance

V DS = 15 V, V GS = 0, f = 1.0 kHz

5484

5485

5486

3000

3500

4000

6000

7000

8000

µ mhos

mhos

Re ( y is)

Input Conductance

V DS = 15 V, V GS = 0, f = 100 MHz

5484

V DS = 15 V, V GS = 0, f = 400 MHz

5485 / 5486

100

µ mhos

1000

µ mhos

g os

Output Conductance

V DS = 15 V, V GS = 0, f = 1.0 kHz

5484

5485

5486

mhos

µ mhos

Re ( y os)

Output Conductance

V DS = 15 V, V GS = 0, f = 100 MHz

5484

V DS = 15 V, V GS = 0, f = 400 MHz

5485 / 5486

mhos

100

µ mhos

Re ( y fs)

Forward Transconductance

V DS = 15 V, V GS = 0, f = 100 MHz

5484

V DS = 15 V, V GS = 0, f = 400 MHz

5485

5486

2500

µ mhos

3000

3500

mhos

C iss

Input Capacitance

V DS = 15 V, V GS = 0, f = 1.0 MHz

5.0

C rss

Reverse Transfer Capacitance

V DS = 15 V, V GS = 0, f = 1.0 MHz

1.0

C oss

Output Capacitance

V DS = 15 V, V GS = 0, f = 1.0 MHz

2.0

Noise Figure

V DS = 15 V, R G = 1.0 k

f = 100 MHz

5484

3.0

V DS = 15 V, R G = 1.0 k Ω

f = 400 MHz

5484

4.0

V DS = 15 V , R G = 1.0 k Ω

2.0

f = 100 MHz

5485 / 5486

V DS = 15 V, R G = 1.0 k Ω

4.0

f = 400 MHz

5485 / 5486

* Pulse Test: Pulse Width ≤

300 ms, Duty Cycle ≤

N-Channel RF Amplifier

(continued)

Typical Characteristics

Transfer Characteristics

Channel Resistance vs Temperature

1000

V = -4.5V

GS(OFF)

V = 15V

500

T = -55 C

V = -1.0V

GS(OFF)

T = +25 C

300

-2.5 V

-5.0V

200

T = +125 C

T = -55 C

T = +25 C

100

-8.0 V

T = +125 C

V = 100mV

V = 0 V

-2.5 V

-1

-2

-3

-4

-5

-50

100

150

V - GATE-SOURCE VOLTAGE(V)

T - AMBIENT TEMPERATURE ( C)

°°

Transconductance

Characteristics

Common Drain-Source

Characteristics

T = -55 C

V = 15V

T = +25 C

TYP V = -5.0V

GS(OFF)

T = +125 C

T = -55 C

T = +25 C

T = +125 C

-3.0V

V = -4.5V

GS(OFF)

-3.5V

-2.5 V

-4.0V

-1

-2

-3

-4

-5

0.2

0.4

0.6

0.8

V - GATE-SOURCE VOLTAGE(V)

V - DRAIN-SOURCE VOLTAGE(V)

Output Conductance vs

Drain Current

Transconductance

Parameter Interactions

f = 1.0 kHz

gfs, I @ V = 15 V, V = 0 PULSE

100

V = -5.5V

GS(OFF)

DSS

r @ V = 100mV, V = 0

5.0V

V = 5v

10V

15V

20V

V = -3.5V

GS(OFF)

0.5

V = -1.5V

GS(OFF)

V @ V = 15V, I = 1nA

GS(OFF)

0.1

0.01 0.02 0.05 0.1 0.2

0.5 1

I -- DRAIN CURRENT (mA)

V - GATE-SOURCE VOLTAGE(V)

T = +25 C

N-Channel RF Amplifier

(continued)

Typical Characteristics (continued)

Transconductance vs

Drain Current

Noise Voltage vs Frequency

V = 15V

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.2 f @ f > 1.0 kHz

V = - 1.5V

G S( OFF)

T = -55 O

T = +25 C

T = +125 C

T = -55 O

I = 0.5 mA

T = +25 C

T = +125 C

0.5

V = - 5V

G S( OFF)

I = 3 mA

V = 15V

f = 1.0 kHz

0.1

0.01 0.02 0.05 0.1 0.2

0.5 1

0.01 0.03 0.1 0.3

100

I - DRAIN CURRENT (mA)

f -- FREQUENCY (kHz)

Capacitance vs Voltage

Noise Figure Frequency

f = 0.1 - 1.0 MHz

V = 15V

I = 5.0 mA

R = 1.0 k

T = +25 C

C ( V = 15 V)

C ( V = 0 V)

-5

-10

-15

-20

20 30

100

200 300 500

1000

V -- GATE-SOURCE VOLTAGE(V)

f -- FREQUENCY (MHz)

Power Dissipation vs.

Ambient Temperature

350

300

TO-92

250

SOT-23

200

150

100

125

150

TEMPERATURE ( C)

N-Channel RF Amplifier

(continued)

Common Source Characteristics

Input Admittance

Output Admittance

V = 15V

V = 0

(CS)

b (x 10)

OSS

g OSS

b iss

g iss

V = 15V

V = 0

(CS)

100

200

300

500

700

1000

100

200

300

500

700

1000

f -- FREQUENCY (MHz)

Forward Transadmittance

Reverse Transadmittance

+g fss

-b fss

- b

rss

-g ( X 0.1)

rss

V = 15V

V = 0

V = 15V

V = 0

(CS)

100

200

300

500

700

1000

100

200

300

500

700

1000

f -- FREQUENCY (MHz)

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