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AND GATES
HCC4073B/81B/82B
HCF4073B/81B/82B
AND GATES
4073B TRIPLE
3–INPUT AND GATE
.
MEDIUM SPEED OPERATION – t
PLH
= 85ns
(typ.) ; t
PHL
= 65ns (typ.) AT 10V
2–INPUT AND GATE
4082B DUAL
4–INPUT AND GATE
.
QUIESCENT CURRENT SPECIFIED TO 20V
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
.
INPUT CURRENT OF 100nA AT 18V AND
25
.
100% TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
DESCRIPTION
The
HCC4073B
,
HCC4081B
and
HCC4082B
(ex-
tended temperature range) and the
HCF4073B
,
HCF4081B
and
HCF4082B
(intermediate tempera-
ture range) are monolithic integrated circuits avail-
able in 14-lead dual in-line plastic or ceramic pack-
age and plastic micro package.
The
HCC/HCF4073B
,
4081B
and
4082B
AND
gates provide the system designer with direct im-
CONNECTION DIAGRAM
4073B
4081B
4082B
June 1989
1/10
4081B QUAD
.
5V, 10V, AND 15V PARAMETRIC RATINGS
FOR HCC DEVICE
°
C FOR HCC DEVICE
M1
(Micro Package)
HCC/HCF4073B/4081B/4082B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage :
HCC
Types
HCF
Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V
i
Input Voltage
– 0.5 to V
DD
+ 0.5
V
I
I
DC Input Current (any one input)
±
10
mA
P
tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= Full Package-temperature Range
200
mW
100
mW
T
op
Operating Temperature :
HCC
Types
HCF
Types
– 55 to + 125
–40to+85
C
°
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specifi cation is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to V
SS
pin voltage.
Storage Temperature
– 65 to + 150
°
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage :
HCC
Types
HCF
Types
3to18
3to15
V
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature :
HCC
Types
HCF
Types
– 55 to + 125
–40to+85
C
°
C
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V
I
V
O
|I
O
|V
DD
T
Low
*
25
C
T
High
*
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I
L
Quiescent
Current
0/ 5
5
0.25
0.01 0.25
7.5
HCC
Types
0/10
10
0.5
0.01 0.5
15
0/15
15
1
0.01
1
30
0/20
20
5
0.02
5
150
m
A
0/ 5
5
1
0.01
1
7.5
HCF
Types
0/10
10
2
0.01
2
15
0/15
15
4
0.01
4
30
V
OH
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V
OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
*
Low
=–55
°
C for
HCC
device : – 40
C for
HCF
device.
C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
C for
HCC
device : + 85
°
2/10
°
T
stg
°
°
°
*
High
=+125
°
HCC/HCF4073B/4081B/4082B
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Value
Symbol
Parameter
V
I
V
O
|I
O
|V
DD
T
Low
*
25
°
C
T
High
*
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
V
IH
Input High
Voltage
0.5/4.5 < 1
5
3.5
3.5
3.5
1/9
< 1 10
7
7
7
V
1.5/13.5 < 1 15
11
11
11
V
IL
Input Low
Voltage
4.5/0.5 < 1
5
1.5
1.5
1.5
9/1
< 1 10
3
3
3
V
13.5/1.5 < 1 15
4
4
4
I
OH
Output
Drive
Current
0/ 5
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types
0/ 5
4.6
5 – 0.64
– 0.51 – 1
– 0.36
0/10
9.5
10 – 1.6
– 1.3 – 2.6
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
mA
0/ 5
2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF
Types
0/ 5
4.6
5 – 0.52
– 0.44 – 1
– 0.36
0/10
9.5
10 – 1.3
– 1.1 – 2.6
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I
OL
Output
Sink
Current
0/ 5
0.4
5
0.64
0.51
1
0.36
HCC
Types
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
mA
0/ 5
0.4
5
0.52
0.44
1
0.36
HCF
Types
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I
IH
,I
IL
Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10
–5
±
0.1
±
1
Any Input
m
A
HCF
Types
0/15
15
±
0.3
±
10
–5
±
0.3
±
1
C
I
Input Capacitance
Any Input
5
7.5
pF
*
Low
=–55
°
C for
HCC
device : – 40
C for
HCF
device.
C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
C for
HCC
device : + 85
°
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
=25
°
C, C
L
= 50pF, typical temperature
coefficient for all V
DD
values is 0.3%/
°
C, all input rise and fall times = 20ns, R
L
= 200k
W
)
Symbol
Parameter
Test Conditions
Value
Unit
V
DD
(V)
Min. Typ. Max.
t
PHL
,t
PLH
Propagation Delay Time
5
125
250
10
60
125
ns
15
45
90
t
TLH
,t
THL
Transition Time
5
100
200
10
50
100
ns
15
40
80
3/10
°
*
High
=+125
°
HCC/HCF4073B/4081B/4082B
Typical Voltage and Current Transfer Charac-
teristics.
Typical Output Low (sink) Current .
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
4/10
HCC/HCF4073B/4081B/4082B
Typical Transition Time vs. Load Capacitance.
Typical Dynamic Power Dissipation per Gate vs.
Frequency.
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
5/10
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