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QUAD EXCLUSIVE OR GATE
HCF4030B
QUAD EXCLUSIVE-OR GATE
n
MEDIUM SPEED OPERATION - t PHL =t PLH =
65ns (TYP.) at C L = 50pF and V DD- V SS = 10V
LOW OUTPUT IMPEDANCE : 500
W
(TYP.) at
n
V DD- V SS = 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
n
n
5V, 10V AND 15V PARAMETRIC RATINGS
DIP
SOP
n
INPUT LEAKAGE CURRENT
I I = 100nA (MAX) AT V DD = 18V T A =25
°
C
n
100% TESTED FOR QUIESCENT CURRENT
ORDER CODES
PACKAGE
n
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B ”STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES”
TUBE
T & R
DIP
HCF4030BEY
SOP
HCF4030BM1
HCF4030M013TR
DESCRIPTION
HCF4030B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4030B types consist of four indipendent
exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate
consists of four n-channel and four p-channel
enhancement-type transistors. All inputs and
outputs are protected against electrostatic effects.
PIN CONNECTION
September 2002
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HCF4030B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
2, 1, 5, 6, 8,
9, 12, 13
A, B, C, D, E,
F, G, H
Data Inputs
3, 4, 10, 11
J, K, L, M Data Outputs
7
V SS
Negative Supply Voltage
14
V DD
Positive Supply Voltage
TRUTH TABLE
IN1
IN2
OUT
L
L
L
L
H
H
H
L
H
H
H
L
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage
-0.5 to +22
V
V I
DC Input Voltage
-0.5 to V DD + 0.5
V
I I
DC Input Current
±
10
mA
P D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T op
Operating Temperature
-55 to +125
°
C
T stg
Storage Temperature
-65 to +150
°
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V SS pin voltage.
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HCF4030B
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage
3to20
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature
-55 to 125
°
C
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
V I
(V)
V O
(V)
|I O |
V DD
(V)
T A =25
°
C
-40 to 85
°
C -55 to 125
°
C
Unit
(
m
A)
Min. Typ. Max. Min. Max. Min. Max.
I L
Quiescent Current 0/5
5
0.02
4
4
30
0/10
10
0.02
8
8
60
m
A
0/15
15
0.02
16
16
120
0/20
20
0.04
20
20
600
V OH Output High
Voltage
0/5
<1
5
4.95
4.95
4.95
0/10
<1
10 9.95
9.95
9.95
V
0/15
<1
15 14.95
14.95
14.95
V OL
Output Low Voltage 5/0
<1
5
0.05
0.05
0.05
10/0
<1
10
0.05
0.05
0.05
V
15/0
<1
15
0.05
0.05
0.05
V IH
Input High Voltage
0.5/4.5 <1
5
3.5
3.5
3.5
1/9
<1
10
7
7
7
V
1.5/13.5 <1
15
11
11
11
V IL
Input Low Voltage
4.5/0.5 <1
5
1.5
1.5
1.5
9/1
<1
10
3
3
3
V
13.5/1.5 <1
15
4
4
4
I OH
Output Drive
Current
0/5
2.5
<1
5 -1.36 -3.2
-1.15
-1.1
0/5
4.6
<1
5 -0.44
-1
-0.36
-0.36
mA
0/10
9.5
<1
10 -1.1 -2.6
-0.9
-0.9
0/15
13.5
<1
15 -3.0 -6.8
-2.4
-2.4
I OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
mA
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I I
Input Leakage
Current
0/18
Any Input
18
±
10 -5
±
0.1
±
1
±
1
m
A
C I
Input Capacitance
Any Input
5
7.5
pF
The Noise Margin for both ”1” and ”0” level is: 1V min. with V DD =5V, 2V min. with V DD =10V, 2.5V min. with V DD =15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, R L = 200K
W
,t r =t f = 20 ns)
Test Condi tion
Value (*)
Unit
Symbol
Parameter
V DD (V)
Min. Typ. Max.
t PLH t PHL Propagation Delay Time
5
140 280
10
65
130
ns
15
50
100
t TLH t THL Output Transition Time
5
100 200
10
50
100
ns
15
40
80
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HCF4030B
TYPICAL APPLICATION : EVEN PARITY-BIT GENERATOR
TYPICAL APPLICATION : EVEN PARITY-CHECKER
TYPICAL APPLICATION : ODD-PARITY-BIT GENERATOR
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HCF4030B
TYPICAL APPLICATION : ODD-PARITY-CHECKER
TYPICAL APPLICATION : 8-BIT COMPARATOR
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