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N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
[
STY16NA90
- 16A - Max247
EXTREMELY LOW GATE CHARGE POWER MOSFET
N - CHANNEL 900V - 0.5
W
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
I D
STY16NA90
900 V
< 0.54
W
16 A
n
TYPICAL R DS(on) = 0.5 W
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
n
n
±
30V GATE TO SOURCE VOLTAGE RATING
REPETITIVE AVALANCHE TESTED
n
n
LOW INTRINSIC CAPACITANCE
100% AVALANCHE TESTED
n
GATE CHARGE MINIMIZED
n
n
REDUCED THRESHOLD VOLTAGE SPREAD
Max247 TM
DESCRIPTION
The Max247 TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
n
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS = 0)
900
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
900
V
V GS
Gate-source Voltage
±
30
V
I D
Drain Current (continuous) at T c =25 o C
16
A
I D
Drain Current (continuous) at T c =100 o C
10
A
I DM (
•
) Drain Current (pulsed)
64
A
P tot
Total Dissipation at T c =25 o C
300
W
Derating Factor
2.4
W/ o C
T stg
Storage Temperature
-55 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
(
•
) Pulse width limited by safe operating area
June 1998
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199642082.002.png
STY16NA90
THERMAL DATA
R thj-case
R t hj- amb
R thc-sink
Thermal Resistance Junction-case
Max
0.42
40
0.05
o C/W
o C/W
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Heatsink
Typ
with Conductive Grease
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
16
A
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =50V)
3000
mJ
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
m
V GS =0
900
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS =MaxRating T c =125 o C
50
500
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
30 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V GS(th) Gate Threshold
Voltage
V DS =V GS I D =250
m
A
2.25
3
3.75
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D =8A
0.5
0.54
W
W
I D(o n)
On State Drain Current V DS >I D(on) xR DS(on)max
V GS =10V
16
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
g fs ( * )
rrd
Transconductance
V DS >I D(on) xR DS(on)max I D =8A
15
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS = 0
6400
600
150
8300
750
200
pF
pF
pF
2/5
A
199642082.003.png
STY16NA90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V DD =450V
I D =8A
30
30
ns
ns
R G =4.7
W
V GS =10V
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD =720V I D =16A V GS = 10 V
245
25
110
320
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V DD =720V
I D =16A
80
25
115
105
35
150
ns
ns
ns
R G =4.7
W
V GS =10V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I SD
I SDM ( • )
Source-drain Current
Source-drain Current
(pulsed)
16
64
A
A
V SD (
*
) Forward On Voltage
I SD =16A
V GS =0
2
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 16 A
di/dt = 100 A/
m
s
1100
ns
V DD =100V
T j =150 o C
Q rr
25.3
m
C
I RRM
46
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
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STY16NA90
Max247 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.70
5.30
A1
2.20
2.60
b
1.00
1.40
b1
2.00
2.40
b2
3.00
3.40
c
0.40
0.80
D
19.70
20.30
e
5.35
5.55
E
15.30
15.90
L
14.20
15.20
L1
3.70
4.30
P025Q
4/5
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STY16NA90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
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