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199641489 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
Line-ups
RF Power Transistors for UHF
1996 Feb 12
File under Discrete Semiconductors, SC08b
199641489.010.png
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
INTRODUCTION
In this section, we present information on recommended circuit line-ups in the main RF power application areas.
A comprehensive range of output power levels is indicated, together with our recommended types in the particular line-up
configuration. The necessary drive power level for each line-up is indicated in the first column.
More detailed application information can be found in the application reports book “Bipolar and MOS Transmitting
Transistors”.
AM AIRCRAFT TRANSMITTERS (100 to 400 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L(carr)
(W)
V CE
(V)
S = stud
F = flange
40
BLW89
2
´
BLW90
2
´
BLX94C
40
28
S
60
BLW89
2 ´ BLW91
2 ´ BLU60/28
60
28
S/F
500
BLW90
2
´
BLX94C
2
´
BLU60/28
120
28
S/F
PowerMOS
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L(carr)
(W)
V CE
(V)
30
BLF521 (1)
BLF522 (1)
BLF545
40
28
25
BLF521 (1)
BLF543
BLF546
80
28
30
BLF521 (1)
BLF543
BLF547
100
28
100
BLF521 (1)
BLF544
BLF548
150
28
Note
1. V DS = 12.5 V.
PORTABLE and MOBILE TRANSMITTERS (400 to 512 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
45
BLV90
BLU99
3
7.5
15
BFR96S
BLU99
BLW81
10
13
400
BLU99
BLU20/12
20
280
BLU99
BLU20/12
BLU45/12
45
13
400
BLU99
BLU20/12
BLU60/12
60
13
1996 Feb 12
2
199641489.011.png 199641489.012.png
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
PowerMOS
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
50
BLF521
BLF522
5
12.5
BASE STATIONS (400 to 470 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
40
BLW89
BLW91
BLX94C
30
28
220
BLW90
BLX94C
BLU60/28
60
28
PowerMOS
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
35
BLF521 (1)
BLF522 (1)
BLF545
40
28
40
BLF521 (1)
BLF543
BLF546
80
28
150
BLF521 (1)
BLF544
BLF548
150
28
45
BLF521 (1)
BLF544
BLF547
100
28
Note
1. V DS = 12.5 V.
ANALOG CELLULAR (900 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
10
BFG10W/X
BLT71/8
1.2
4.8
1
BFG540/X
BLT80
BLT81
1.2
6
1
BFG540/X
BLT70
BLT71
1.2
4.8
1
BFG520W/X
BFG10W/X
BLT61
1.2
3.6
1996 Feb 12
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Philips Semiconductors
RF Power Transistors for UHF
Line-ups
DIGITAL CELLULAR (900 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
1
BFG540W/X
BFG10W/X
BLT72
3 (1)
4.8
1
BFG540W/X
BFG10W/X
BLT62
3
3.6
1
BFG540W/X
BFG10W/X
BLT82
3.5 (1)
6
Note
1. Pulsed.
PORTABLE TRANSMITTERS (860 to 960 MHz))
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
P L
(W)
V CE
(V)
1
BFG540
BLT80
BLT81
1.2
6
15
BFG91A
BLT80
BLT92/SL
3
7.5
MOBILE TRANSMITTERS (860 to 960 MHz)
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
4 th STAGE
P L
(W)
V CE
(V)
S = stud
F = flange
110
BLU86
BLV91/SL
BLV93
8
13
S/F
100
BLV90
BLV92
BLV94
15
13
S/F
100
BLU86
BLV91/SL
BLV93
BLV95
22
13
S/F
1996 Feb 12
4
199641489.007.png 199641489.008.png
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
BASE STATIONS (860 to 960 MHz) CLASS AB OPERATION
Bipolar
INPUT
POWER
(mW)
1 st STAGE
2 nd STAGE
3 rd STAGE
4 th STAGE
P L
(W)
V CE
(V)
f
(MHz)
270
BLV103 (1)
BLV934
30
26
960
220
BLV103 (1)
BLV935
30
26
960
65
BLV99/SL (2)
BLV910
BLV946
40
26
960
64
BLV99/SL
BLV100 (3)
BLV101A
45
25
900
100
BLV99/SL
BLV100 (3)
BLV101B
45
25
960
25
BGY916
BLV958
75
26
960
75
BLV103 (1)
BLV920
BLV958
75
26
960
75
BLV103 (1)
BLV920
2
´
BLV946
80
26
960
25
BLV99/SL
BLV103
BLV98CE
2
´
BLV101A
85
25
900
30
BLV99/SL
BLV103
BLV97CE
2
´
BLV101B
85
25
960
35
BLV99/SL
BLV103
BLV945A
BLV950
120
25
900
20
BLV99/SL
BLV103
BLV945A
BLV950
150 (PEP)
25
900 (4)
250
BLV103 (1)
BLV934
BLV950
150
26
960
Notes
1. BLV904 is a comparable transistor in a SMD package.
2. BLV902 is a comparable transistor in a SMD package.
3. BLV909 is a comparable transistor in a SMD package.
4. d IM =
-
30 dB.
1996 Feb 12
5
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