opa124.pdf
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OPA124
®
OPA124
Low Noise Precision Difet
®
OPERATIONAL AMPLIFIER
FEATURES
l
LOW NOISE: 6nV/
Ö
Hz (10kHz)
APPLICATIONS
l
PRECISION PHOTODIODE PREAMP
l
LOW BIAS CURRENT: 1pA max
l
MEDICAL EQUIPMENT
l
LOW OFFSET: 250
m
V max
l
OPTOELECTRONICS
l
LOW DRIFT: 2
m
V/
°
C max
l
DATA ACQUISITION
l
HIGH OPEN-LOOP GAIN: 120dB min
l
TEST EQUIPMENT
l
HIGH COMMON-MODE REJECTION:
100dB min
l
AVAILABLE IN 8-PIN PLASTIC DIP
AND 8-PIN SOIC PACKAGES
DESCRIPTION
The OPA124 is a precision monolithic FET opera-
tional amplifier using a
Difet
(dielectrical isolation)
manufacturing process. Outstanding DC and AC per-
formance characteristics allow its use in the most
critical instrumentation applications.
Bias current, noise, voltage offset, drift, open-loop
gain, common-mode rejection and power supply re-
jection are superior to BIFET and CMOS amplifiers.
Difet
fabrication achieves extremely low input bias
currents without compromising input voltage noise
performance. Low input bias current is maintained
over a wide input common-mode voltage range with
unique cascode circuitry. This cascode design also
allows high precision input specifications and reduced
susceptibility to flicker noise. Laser trimming of thin-
film resistors gives very low offset and drift.
Compared to the popular OPA111, the OPA124 gives
comparable performance and is available in an 8-pin
PDIP and 8-pin SOIC package.
Substrate
+V
CC
8
7
–In
2
+In
3
Noise-Free Cascode
(2)
Output
6
Trim
(1)
10k
W
2k
W
2k
W
1
Trim
(1)
10k
W
5
2k
W
2k
W
–V
CC
OPA124 Simplified Circuit
4
NOTES: (1) Omitted on SOIC. (2) Patented.
BIFET
®
National Semiconductor Corp.,
Difet
®
Burr-Brown Corp.
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
© 1993 Burr-Brown Corporation
PDS-1203C
1
Printed in U.S.A. March, 1998
OPA124
SPECIFICATIONS
ELECTRICAL
At V
CC
=
±
15VDC and T
A
= +25
°
C, unless otherwise noted.
OPA124U, P
OPA124UA, PA
OPA124PB
PARAMETER
CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT NOISE
Voltage, f
O
= 10Hz
(4)
40
80
[
[
[
[
nV/
Ö
Hz
f
O
= 100Hz
(4)
15
40
[
[
[
[
nV/
Ö
Hz
f
O
= 1kHz
(4)
8
15
[
[
[
[
nV/
Ö
Hz
f
O
= 10kHz
(5)
6
8
[
[
[
[
nV/
Ö
Hz
f
B
= 10Hz to 10kHz
(5)
0.7
1.2
[
[
[
[
m
Vrms
f
B
= 0.1Hz to 10Hz
1.6
3.3
[
[
[
[
m
Vp-p
Current, f
B
= 0.1Hz to 10Hz
9.5
15
[
[
[
[
fAp-p
f
O
= 0.1Hz thru 20kHz
0.5
0.8
[
[
[
[
fA/
Ö
Hz
OFFSET VOLTAGE
(1)
Input Offset Voltage
V
CM
= 0VDC
±
200
±
800
±
150
±
500
±
100
±
250
m
V
vs Temperature
T
A
= T
MIN
to T
MAX
±
4
±
7.5
±
2
±
4
±
1
±
2
m
V/
C
Supply Rejection
V
CC
=
±
10V to
±
18V
88
110
90
[
100
[
dB
vs Temperature
T
A
= T
MIN
to T
MAX
84
100
86
[
90
[
dB
BIAS CURRENT
(1)
Input Bias Current
V
CM
= 0VDC
±
1
±
5
±
0.5
±
2
±
0.35
±
1
pA
OFFSET CURRENT
(1)
Input Offset Current
V
CM
= 0VDC
±
1
±
5
±
0.5
±
1
±
0.25
±
0.5
pA
IMPEDANCE
Differential
10
13
|| 1
[
[
W
|| pF
Common-Mode
10
14
|| 3
[
[
W
|| pF
VOLTAGE RANGE
Common-Mode Input Range
±
10
±
11
[
[
[
[
V
Common-Mode Rejection
V
IN
=
±
10VDC
92
110
94
[
100
[
dB
vs Temperature
T
A
= T
MIN
to T
MAX
86
100
[
[
90
[
dB
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
R
L
³
2k
W
106
125
[
[
120
[
dB
FREQUENCY RESPONSE
Unity Gain, Small Signal
1.5
[
[
MHz
Full Power Response
20Vp-p, R
L
= 2k
W
16
32
[
[
[
[
kHz
Slew Rate
V
O
=
±
10V, R
L
= 2k
W
1
1.6
[
[
[
[
V/
m
s
THD
0.0003
[
[
%
Settling Time, 0.1%
Gain = –1, R
L
= 2k
W
6
[
[
m
s
0.01%
10V Step
10
[
[
m
s
Overload Recovery,
50% Overdrive
(2)
Gain = –1
5
[
[
m
s
RATED OUTPUT
Voltage Output
R
L
= 2k
W
±
11
±
12
[
[
[
[
V
Current Output
V
O
=
±
10VDC
±
5.5
±
10
[
[
[
[
mA
Output Resistance
DC, Open Loop
100
[
[
W
Load Capacitance Stability
Gain = +1
1000
[
[
pF
Short Circuit Current
10
40
[
[
[
[
mA
POWER SUPPLY
Rated Voltage
±
15
[
[
VDC
Voltage Range, Derated
±
5
±
18
[
[
[
[
VDC
Current, Quiescent
I
O
= 0mADC
2.5
3.5
[
[
[
[
mA
TEMPERATURE RANGE
Specification
T
MIN
and T
MAX
–25
+85
[
[
[
[
°
C
Storage
–65
+125
[
[
[
[
°
C
q
Junction-Ambient: PDIP
90
[
[
°
C/W
SOIC
100
[
[
°
C/W
Specification same as OPA124U, P
NOTES: (1) Offset voltage, offset current, and bias current are measured with the units fully warmed up. For performance at other temperatures see Typical Performance
Curves. (2) Overload recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% input overdrive.
(3) For performance at other temperatures see Typical Performance Curves. (4) Sample tested, 98% confidence. (5) Guaranteed by design.
®
OPA124
2
°
[
CONNECTION DIAGRAMS
Top View
DIP
Top View
SOIC
Offset Trim
1
8
Substrate
NC
1
8
Substrate
–In
2
7
+V
S
Output
–In
2
7
+V
S
+In
3
6
+In
3
6
Output
–V
S
4
5
Offset Trim
–V
S
4
5
NC
NC = No Connect
PACKAGE/ORDERING INFORMATION
BIAS
OFFSET
PACKAGE
TEMPERATURE
CURRENT
DRIFT
PRODUCT
PACKAGE
DRAWING NUMBER
(1)
RANGE
pA, max
m
V/
°
C, max
OPA124U
8-Lead SOIC
182
–25
°
C to +85
°
C
5
7.5
OPA124P
8-Pin Plastic DIP
006
–25
°
C to +85
°
C
5
7.5
OPA124UA
8-Lead SOIC
182
–25
°
C to +85
°
C
2
4
OPA124PA
8-Pin Plastic DIP
006
–25
°
C to +85
°
C
2
4
OPA124PB
8-Pin Plastic DIP
006
–25
°
C to +85
°
C
1
2
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
ABSOLUTE MAXIMUM RATINGS
(1)
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
Supply ...........................................................................................
±
18VDC
Internal Power Dissipation
(2)
......................................................... 750mW
Differential Input Voltage
(3)
..........................................................
±
36VDC
Input Voltage Range
(3)
.................................................................
±
18VDC
Storage Temperature Range .......................................... –65
°
C to +150
°
C
Operating Temperature Range ....................................... –40
°
C to +125
°
C
C
Output Short Circuit Duration
(4)
............................................... Continuous
Junction Temperature .................................................................... +175
°
C
NOTES: (1) Stresses above these ratings may cause permanent damage.
(2) Packages must be derated based on
°
q
JA
= 90
°
C/W for PDIP and 100
C/W
18VDC, the absolute maximum
input voltage is equal to +18V > V
IN
> –V
CC
– 6V. See Figure 2. (4) Short circuit
may be to power supply common only. Rating applies to +25
±
°
C ambient.
Observe dissipation limit and T
J
.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
3
OPA124
Lead Temperature (soldering, 10s) ................................................ +300
°
for SOIC. (3) For supply voltages less than
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, and V
CC
=
±
15VDC, unless otherwise noted.
INPUT CURRENT NOISE SPECTRAL DENSITY
INPUT VOLTAGE NOISE SPECTRAL DENSITY
100
1k
10
100
U, P
1
10
PB
PB
0.1
1
1
10
100
1k
Frequency (Hz)
10k
100k
1M
1
10
100
1k
Frequency (Hz)
10k
100k
1M
TOTAL
(1)
INPUT VOLTAGE NOISE SPECTRAL
DENSITY vs SOURCE RESISTANCE
TOTAL
(1)
INPUT VOLTAGE NOISE (PEAK-TO-PEAK)
vs SOURCE RESISTANCE
1k
1k
R
S
= 10M
W
R
S
= 1M
W
NOTE: (1) Includes contribution
from source resistance.
100
100
R
S
= 100k
W
PB
PB
f
B
= 0.1Hz to 10Hz
10
R
S
= 100
W
10
NOTE: (1) Includes contribution
from source resistance.
1
1
0.1
1
10
100
Frequency (Hz)
1k
10k
100k
10
4
10
5
10
6
10
7
10
8
10
9
10
10
Source Resistance (
W
)
VOLTAGE AND CURRENT NOISE SPECTRAL
DENSITY vs TEMPERATURE
TOTAL INPUT VOLTAGE NOISE SPECTRAL DENSITY
AT 1kHz vs SOURCE RESISTANCE
12
100
1k
f
O
= 1kHz
E
O
10
10
100
R
S
8
1
OPA124PB +
Resistor
10
6
0.1
Resistor Noise Only
4
–50
0.01
1
–25
0
25
50
75
100
125
100
1k
10k
100k
1M
10M
100M
Temperature (°C)
Source Resistance ( )
W
®
OPA124
4
°
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, and V
CC
=
±
15VDC, unless otherwise noted.
BIAS AND OFFSET CURRENT
vs TEMPERATURE
BIAS AND OFFSET CURRENT
vs INPUT COMMON-MODE VOLTAGE
1k
1k
10
10
100
100
10
PB
10
1
Bias Current
1
1
1
Offset Current
0.1
0.1
0.1
0.1
0.01
0.01
0.01
0.01
–50
–25
0
25
50
75
100
125
–15
–10
–5
0
5
10
15
Ambient Temperature (°C)
Common-Mode Voltage (V)
POWER SUPPLY REJECTION
vs FREQUENCY
COMMON-MODE REJECTION
vs FREQUENCY
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
1
10
100
1k
10k
100k
1M
10M
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE
OPEN-LOOP FREQUENCY RESPONSE
120
140
110
120
–45
100
100
80
–90
90
60
Phase
Margin
»
40
Gain
65°
–135
80
20
70
0
–180
–15
–10
–5
0
5
10
15
1
10
100
1k
10k
100k
1M
10M
Common-Mode Voltage (V)
Frequency (Hz)
®
5
OPA124
°
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