mrf136.pdf

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF136/D
The RF MOSFET Line
!
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.
•
Guaranteed 28 Volt, 150 MHz Performance
MRF136
15 W, 30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FETs
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ)
Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical)
Efficiency = 54% (Typical)
•
Small–Signal and Large–Signal
Characterization
•
100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
MRF136
D
•
Space Saving Package For
Push–Pull Circuit
Applications — MRF136Y
CASE 211–07, STYLE 2
MRF136
•
Excellent Thermal Stability,
Ideally Suited For Class A
Operation
G
S
•
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MRF136Y
D
G
S
(FLANGE)
G
CASE 319B–02, STYLE 1
MRF136Y
D
MAXIMUM RATINGS
Value
Rating
Symbol
Unit
Rating
Symbol
Unit
MRF136
MRF136Y
Drain–Source Voltage
V DSS
65
65
Vdc
Drain–Gate Voltage (R GS = 1.0 M
W
)
V DGR
65
65
Vdc
Gate–Source Voltage
V GS
± 40
Vdc
Drain Current — Continuous
I D
2.5
5.0
Adc
Total Device Dissipation @ T C = 25
°
C
P D
55
0.314
100
0.571
Watts
W/
Derate above 25
°
C
C
Storage Temperature Range
T stg
– 65 to +150
°
C
Operating Junction Temperature
T J
200
°
C
THERMAL CHARACTERISTICS
Max
Characteristic
Symbol
Unit
Characteristic
Symbol
Unit
MRF136
MRF136Y
C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Thermal Resistance, Junction to Case
R
JC
3.2
1.75
°
REV 6
W
MOTOROLA RF DEVICE DATA
MRF136 MRF136Y
1
°
q
Motorola, Inc. 1994
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ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(V GS = 0, I D = 5.0 mA)
V (BR)DSS
65
—
—
Vdc
Zero–Gate Voltage Drain Current
(V DS = 28 V, V GS = 0)
I DSS
—
—
2.0
mAdc
Gate–Source Leakage Current
(V GS = 40 V, V DS = 0)
I GSS
—
—
1.0
m
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V DS = 10 V, I D = 25 mA)
V GS(th)
1.0
3.0
6.0
Vdc
Forward Transconductance
(V DS = 10 V, I D = 250 mA)
g fs
250
400
—
mmhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(V DS = 28 V, V GS = 0, f = 1.0 MHz)
C iss
—
24
—
pF
Output Capacitance
(V DS = 28 V, V GS = 0, f = 1.0 MHz)
C oss
—
27
—
pF
Reverse Transfer Capacitance
(V DS = 28 V, V GS = 0, f = 1.0 MHz)
C rss
—
5.5
—
pF
FUNCTIONAL CHARACTERISTICS (2)
Noise Figure
MRF136
NF
—
1.0
—
dB
(V DS = 28 Vdc, I D = 500 mA, f = 150 MHz)
Common Source Power Gain (Figure 1) MRF136
(V DD = 28 Vdc, P out = 15 W, f = 150 MHz, I DQ = 25 mA)
G ps
13
16
—
dB
Common Source Power Gain (Figure 2) MRF136Y
(V DD = 28 Vdc, P out = 30 W, f = 150 MHz, I DQ = 100 mA)
G ps
12
14
—
dB
Drain Efficiency (Figure 1) MRF136
(V DD = 28 Vdc, P out = 15 W, f = 150 MHz, I DQ = 25 mA)
h
50
60
—
%
Drain Efficiency (Figure 2) MRF136Y
(V DD = 28 Vdc, P out = 30 W, f = 150 MHz, I DQ = 100 mA)
h
50
54
—
%
Electrical Ruggedness (Figure 1) MRF136
(V DD = 28 Vdc, P out = 15 W, f = 150 MHz, I DQ = 25 mA,
VSWR 30:1 at all Phase Angles)
y
No Degradation in Output Power
Electrical Ruggedness (Figure 2) MRF136Y
(V DD = 28 Vdc, P out = 30 W, f = 150 MHz, I DQ = 100 mA,
VSWR 30:1 at all Phase Angles)
y
No Degradation in Output Power
NOTES:
1. For MRF136Y, each side measured separately.
2. For MRF136Y measured in push–pull configuration.
MRF136 MRF136Y
2
MOTOROLA RF DEVICE DATA
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R4
RFC2
C10
C11
V DD = + 28 V
+
D1
C8
C9
BIAS
ADJU S T
–
R3
R2
C7
RFC1
R1
L2
L3
C6
RF OUTPUT
C1
L1
RF INPUT
C4
C3
C5
C2
DUT
C1, C2 — Arco 406, 15 – 115 pF or Equivalent
C3 — Arco 404, 8 – 60 pF or Equivalent
C4 — 43 pF Mini–Unelco or Equivalent
C5 — 24 pF Mini–Unelco or Equivalent
C6 — 680 pF, 100 Mils Chip
C7 — 0.01
L1 — 2 Turns, 0.29 , ID, #18 AWG, 0.10 , Long
L2 — 2 Turns, 0.23 , ID, #18 AWG, 0.10 , Long
L3 — 2–1/4 Turns, 0.29
,
ID, #18 AWG, 0.125
,
Long
ID, #20 AWG Enamel Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 27
,
m
F Ceramic
W
, 1 W Thin Film
C8 — 100
m
F, 40 V
, 1/4 W
R3 — 10 Turns, 10 k
W
F Ceramic
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
m
W
, 1/2 W
Board Material — 0.062
W
,
G10, 1 oz. Cu Clad, Double Sided
Figure 1. 150 MHz Test Circuit (MRF136)
R4
R6
BIAS
ADJUST
D1
C11
RFC1
C2
R2
C3
R5
C5
RFC2
C8
V DD = + 28 V
R1
C6
C7
G
D
RF INPUT
T1
T2
RF OUTPUT
C1
S
A
B
G
D
DUT
C9
C10
R3
C4
C1 — 5.0 pF
C2, C3, C4, C6, C7, C9, C11 — 0.1 m F Ceramic
C5, C8 — 680 pF Feedthru
C10 — 15 pF
D1 — 1N4740 Motorola Zener
RFC1 — 17 Turns, #24 AWG Wound on R5
RFC2 — Ferroxcube VK–200–19/4B or Equivalent
R1 — 10 k
W
R5 — 56 k W , 1 W
R6 — 1.6 k W , 1/4 W
T1 — Primary Winding — 3 Turns #28 Enameled Wire.
T1 — Secondary Winding — 2 Turns #28 Enameled Wire.
T1 — Both windings wound through a Fair/Rite Balun 65 core.
T1 — Part #2865002402.
T2 — 1:1 Transformer Wound Bifilar — 2 Turns Twisted Pair
T1 — #24 Enameled Wire through a Indiana General Balun Q1
T1 — core. Part #18006–1–Q1. Primary winding center tapped.
Board Material — 0.062
, 1/2 W
R4 — 10 Turns, 10 k
W
W
,
G10, 1 oz. Cu Clad, Double Sided
Figure 2. 30 – 150 MHz Test Circuit (MRF136Y)
MOTOROLA RF DEVICE DATA
MRF136 MRF136Y
3
RFC1 — 20 Turns, 0.30
R2 — 10 k
C9 — 0.1
R4 — 1.8 k
, 1/4 W
R2, R3 — 560
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220
18
16
14
12
10
8
6
4
2
0 0
f = 100 MHz
150 MHz
200 MHz
10
9
8
7
6
5
4
3
2
1
0 0
f = 100 MHz
150 MHz
200 MHz
V DD = 28 V
I DQ = 25 mA
V DD = 13.5 V
I DQ = 25 mA
200
400
600
800
1000
200
400
600
800
1000
P in , INPUT POWER (MILLWATTS)
P in , INPUT POWER (MILLWATTS)
Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Input Power
20
18
16
14
12
10
8
6
4
24
f = 400 MHz
I DQ = 25 mA
V DD = 28 V
21
P in = 600 mW
18
15
400 mW
12
200 mW
V DD = 13.5 V
9
6
I DQ = 25 mA
f = 100 MHz
2
0 0
3
1
2
3
4
0 12
14
16
18
20
22
24
26
28
P in , INPUT POWER (WATTS)
V DD , SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Input Power
Figure 6. Output Power versus Supply Voltage
24
P in = 900 mW
24
21
21
P in = 1 W
18
18
600 mW
15
15
0.7 W
12
12
9
300 mW
9
0.4 W
6
6
I DQ = 25 mA
f = 150 MHz
I DQ = 25 mA
f = 200 MHz
3
3
0 12
14
16
18
20
22
24
26
28
0
12
14
16
18
20
22
24
26
28
V DD , SUPPLY VOLTAGE (VOLTS)
V DD , SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
Figure 8. Output Power versus Supply Voltage
MRF136 MRF136Y
4
MOTOROLA RF DEVICE DATA
11122045.020.png 11122045.021.png
20
18
16
14
12
10
8
6
4
2
0
16
I DQ = 25 mA
f = 400 MHz
P in = 3 W
14
V DD = 28 V
I DQ = 25 mA
P in = CONSTANT
400 MHz
12
2 W
10
8
1 W
TYPICAL DEVICE
SHOWN, V GS(th) = 3 V
400 MHz
150 MHz
6
4
2
12
14
16
18
20
22
24
26
28
0
– 7
– 6 – 5
– 4 – 3 – 2
–1
0
1
2
3
V DD , SUPPLY VOLTAGE (VOLTS)
V GS , GATE–SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
MRF136
Figure 10. Output Power versus Gate Voltage
MRF136
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
V DS = 28 V
I D = 750 mA
TYPICAL DEVICE
SHOWN, V GS(th) = 3 V
500 mA
V DS = 10 V
250 mA
25 mA
0
1
2
3
4
5
6
7
0.94
0
25
50
75
100
125
150
175
V DS , GATE–SOURCE VOLTAGE (VOLTS)
T C , CASE TEMPERATURE (
°
C)
Figure 11. Drain Current versus Gate Voltage
(Transfer Characteristics)*
MRF136/MRF136Y
Figure 12. Gate–Source Voltage versus
Case Temperature*
MRF136/MRF136Y
100
10
MRF136Y
5
180
V GS = 0 V
f = 1 MHz
3
2
MRF136
60
C oss
T C = 25 ° C
1
40
C iss
20
C rss
0.3
0.2
0
0
4
8
12
16
20
24
28
0.1
1
2
3
5
10
20
30
50
70
100
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 13. Capacitance versus Drain–Source Voltage*
MRF136/MRF136Y
Figure 14. DC Safe Operating Area
MRF136/MRF136Y
*Data shown applies to MRF136 and each half of MRF136Y.
MOTOROLA RF DEVICE DATA
MRF136 MRF136Y
5
– 25
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